JPS56118367A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS56118367A JPS56118367A JP2140980A JP2140980A JPS56118367A JP S56118367 A JPS56118367 A JP S56118367A JP 2140980 A JP2140980 A JP 2140980A JP 2140980 A JP2140980 A JP 2140980A JP S56118367 A JPS56118367 A JP S56118367A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- sio2
- mask
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 10
- 229910052681 coesite Inorganic materials 0.000 abstract 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract 5
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract 5
- 229910052682 stishovite Inorganic materials 0.000 abstract 5
- 229910052905 tridymite Inorganic materials 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
- 150000002500 ions Chemical class 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 238000002513 implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To prevent the defects from taking place and growing on the substrate during the high temperature heat treatment and to improve the properties, by forming new defectless SiO2 film and the well region after removing the damaged SiO2 film owing to etching and ions implantation. CONSTITUTION:An SiO2 2 and CVD Si3N4 3 are stacked on an N type Si substrate 1 and a resist-mask 10 is formed. Plasma etching by means of CF4 gas and etching by means of HF solution are performed to form an opening. Then a resist-mask 4 is again formed and B ions are implanted into the substrate through the Si3N4 film 3. The mask 4 is removed and after treatment at the temperature of about 1,000 deg.C and coverage by an SiO2 film 11, a P well 5 is formed by heat treatment in N2 at the temperature of 1,200 deg.C. Thereafter, according to the normal method, to the part where a field oxidized film is to be formed around the parts where a P channel device and N channel device are to be formed, P and B ions are respectively implanted to form channel stoppers 8, 7 and a field oxidized film 6. Because the newly formed SiO2 film is defectless and with no pinhole, the substrate 1 is free from defects.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2140980A JPS56118367A (en) | 1980-02-22 | 1980-02-22 | Preparation of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2140980A JPS56118367A (en) | 1980-02-22 | 1980-02-22 | Preparation of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56118367A true JPS56118367A (en) | 1981-09-17 |
Family
ID=12054224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2140980A Pending JPS56118367A (en) | 1980-02-22 | 1980-02-22 | Preparation of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56118367A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58202562A (en) * | 1982-04-08 | 1983-11-25 | エス・ジ−・エス−アテス・コンポネンチ・エレツトロニシ・ソシエタ・ペル・アチオニ | Method of producing semiconductor device |
-
1980
- 1980-02-22 JP JP2140980A patent/JPS56118367A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58202562A (en) * | 1982-04-08 | 1983-11-25 | エス・ジ−・エス−アテス・コンポネンチ・エレツトロニシ・ソシエタ・ペル・アチオニ | Method of producing semiconductor device |
| JPH0479142B2 (en) * | 1982-04-08 | 1992-12-15 | Etsuse Jii Etsuse Atesu Konhonentei Eretsutoronishi Spa |
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