JPS6419748A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6419748A
JPS6419748A JP17634487A JP17634487A JPS6419748A JP S6419748 A JPS6419748 A JP S6419748A JP 17634487 A JP17634487 A JP 17634487A JP 17634487 A JP17634487 A JP 17634487A JP S6419748 A JPS6419748 A JP S6419748A
Authority
JP
Japan
Prior art keywords
film
relieved
leaving
residue
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17634487A
Other languages
Japanese (ja)
Inventor
Kohei Eguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP17634487A priority Critical patent/JPS6419748A/en
Publication of JPS6419748A publication Critical patent/JPS6419748A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To form excellent Cu containing Al film patterns leaving no residue during an etching process by a method wherein, a Cu containing Al film is heat treated after a forming process and before a patterning process. CONSTITUTION:A Cu containing Al film 2 in thickness of 1mum is formed on a semiconductor substrate 1 by sputtering process. First, the segregation of Cu in the Al film 2 is relieved by heat treatment in N2 atmosphere at 400 deg.C for 30 minutes to form a Cu containing relieved Al film 3. Second, photoresist pattern film 4 are formed on the film 3. Finally, the Al film 3 is selectively etched by reactive etching process using a gas containing CCl4. Through said dryetching processes, the Cu containing Al film 3 can be etched leaving no residue at all.
JP17634487A 1987-07-14 1987-07-14 Manufacture of semiconductor device Pending JPS6419748A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17634487A JPS6419748A (en) 1987-07-14 1987-07-14 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17634487A JPS6419748A (en) 1987-07-14 1987-07-14 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6419748A true JPS6419748A (en) 1989-01-23

Family

ID=16011949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17634487A Pending JPS6419748A (en) 1987-07-14 1987-07-14 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6419748A (en)

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