JPS6474740A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6474740A
JPS6474740A JP23281787A JP23281787A JPS6474740A JP S6474740 A JPS6474740 A JP S6474740A JP 23281787 A JP23281787 A JP 23281787A JP 23281787 A JP23281787 A JP 23281787A JP S6474740 A JPS6474740 A JP S6474740A
Authority
JP
Japan
Prior art keywords
tungsten
contact holes
insulating film
chemical vapor
photoresist patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23281787A
Other languages
Japanese (ja)
Inventor
Toyokazu Fujii
Takao Kakiuchi
Tsutomu Fujita
Yoji Masuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP23281787A priority Critical patent/JPS6474740A/en
Publication of JPS6474740A publication Critical patent/JPS6474740A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To make excellent contacts by a method wherein, after depositing an insulating film, contact holes are made; the contact holes are filled up with tungsten by selective chemical vapor depositing process of tungsten; and after heat-treatment, a metallic wiring is performed. CONSTITUTION:Silica glass containing boron and phosphorus as an insulating film 2 is deposited by chemical vapor depositing process on a stepped silicon substrate 1 and then photoresist patterns 3 are formed by photoetching process. After dryetching the insulating film 2 using the photoresist patterns 3 as masks, the photoresist patterns 3 are removed. Later, tungsten is deposited in contact holes only by selective chemical vapor depositing process of tungsten. Next, the contact holes are filled up with tungsten. Later, the surface is heat-treated in nitrogen atmosphere at e.g. 900 deg.C to take specified shape. At this time, the parts wherein tungsten 4 and the silicon substrate 1 are in contact with one another become silicide 5. Finally, specified metallic wiring is performed.
JP23281787A 1987-09-17 1987-09-17 Manufacture of semiconductor device Pending JPS6474740A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23281787A JPS6474740A (en) 1987-09-17 1987-09-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23281787A JPS6474740A (en) 1987-09-17 1987-09-17 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6474740A true JPS6474740A (en) 1989-03-20

Family

ID=16945240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23281787A Pending JPS6474740A (en) 1987-09-17 1987-09-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6474740A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5472911A (en) * 1994-09-02 1995-12-05 Motorola, Inc. Method for controlling electromigration and electrically conductive interconnect structure therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5472911A (en) * 1994-09-02 1995-12-05 Motorola, Inc. Method for controlling electromigration and electrically conductive interconnect structure therefor

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