JPS6474740A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6474740A JPS6474740A JP23281787A JP23281787A JPS6474740A JP S6474740 A JPS6474740 A JP S6474740A JP 23281787 A JP23281787 A JP 23281787A JP 23281787 A JP23281787 A JP 23281787A JP S6474740 A JPS6474740 A JP S6474740A
- Authority
- JP
- Japan
- Prior art keywords
- tungsten
- contact holes
- insulating film
- chemical vapor
- photoresist patterns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To make excellent contacts by a method wherein, after depositing an insulating film, contact holes are made; the contact holes are filled up with tungsten by selective chemical vapor depositing process of tungsten; and after heat-treatment, a metallic wiring is performed. CONSTITUTION:Silica glass containing boron and phosphorus as an insulating film 2 is deposited by chemical vapor depositing process on a stepped silicon substrate 1 and then photoresist patterns 3 are formed by photoetching process. After dryetching the insulating film 2 using the photoresist patterns 3 as masks, the photoresist patterns 3 are removed. Later, tungsten is deposited in contact holes only by selective chemical vapor depositing process of tungsten. Next, the contact holes are filled up with tungsten. Later, the surface is heat-treated in nitrogen atmosphere at e.g. 900 deg.C to take specified shape. At this time, the parts wherein tungsten 4 and the silicon substrate 1 are in contact with one another become silicide 5. Finally, specified metallic wiring is performed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23281787A JPS6474740A (en) | 1987-09-17 | 1987-09-17 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23281787A JPS6474740A (en) | 1987-09-17 | 1987-09-17 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6474740A true JPS6474740A (en) | 1989-03-20 |
Family
ID=16945240
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23281787A Pending JPS6474740A (en) | 1987-09-17 | 1987-09-17 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6474740A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5472911A (en) * | 1994-09-02 | 1995-12-05 | Motorola, Inc. | Method for controlling electromigration and electrically conductive interconnect structure therefor |
-
1987
- 1987-09-17 JP JP23281787A patent/JPS6474740A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5472911A (en) * | 1994-09-02 | 1995-12-05 | Motorola, Inc. | Method for controlling electromigration and electrically conductive interconnect structure therefor |
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