JPS5431290A - Semiconductor integrated circuit device and its manufacture - Google Patents

Semiconductor integrated circuit device and its manufacture

Info

Publication number
JPS5431290A
JPS5431290A JP9725977A JP9725977A JPS5431290A JP S5431290 A JPS5431290 A JP S5431290A JP 9725977 A JP9725977 A JP 9725977A JP 9725977 A JP9725977 A JP 9725977A JP S5431290 A JPS5431290 A JP S5431290A
Authority
JP
Japan
Prior art keywords
manufacture
integrated circuit
semiconductor integrated
circuit device
crossover
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9725977A
Other languages
Japanese (ja)
Inventor
Yoji Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9725977A priority Critical patent/JPS5431290A/en
Publication of JPS5431290A publication Critical patent/JPS5431290A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To realize a high-yield manufacturing process for the high-density IC through reduction of the number of both the contact and the metal wiring, by securing a crossover between the polycrystal silicon layer and the diffusion layer of the silicon gate MOSIC.
JP9725977A 1977-08-12 1977-08-12 Semiconductor integrated circuit device and its manufacture Pending JPS5431290A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9725977A JPS5431290A (en) 1977-08-12 1977-08-12 Semiconductor integrated circuit device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9725977A JPS5431290A (en) 1977-08-12 1977-08-12 Semiconductor integrated circuit device and its manufacture

Publications (1)

Publication Number Publication Date
JPS5431290A true JPS5431290A (en) 1979-03-08

Family

ID=14187539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9725977A Pending JPS5431290A (en) 1977-08-12 1977-08-12 Semiconductor integrated circuit device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5431290A (en)

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