Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co LtdfiledCriticalToshiba Corp
Priority to JP12389976ApriorityCriticalpatent/JPS5349945A/en
Publication of JPS5349945ApublicationCriticalpatent/JPS5349945A/en
PURPOSE: To obtain a high-frequency element which prevents the break-through of the diffusion layer within a substrate of electrode forming metal by forming an electrode wiring on poly Si thin layer covering over the electrode window.
COPYRIGHT: (C)1978,JPO&Japio
JP12389976A1976-10-181976-10-18Manufacture of semiconductor device
PendingJPS5349945A
(en)