JPS55157267A - Manufacturing method for semiconductor device - Google Patents
Manufacturing method for semiconductor deviceInfo
- Publication number
- JPS55157267A JPS55157267A JP6596179A JP6596179A JPS55157267A JP S55157267 A JPS55157267 A JP S55157267A JP 6596179 A JP6596179 A JP 6596179A JP 6596179 A JP6596179 A JP 6596179A JP S55157267 A JPS55157267 A JP S55157267A
- Authority
- JP
- Japan
- Prior art keywords
- oxidation
- oxidation film
- film
- silicon
- opened
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 230000003647 oxidation Effects 0.000 abstract 8
- 238000007254 oxidation reaction Methods 0.000 abstract 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- JOXCDOKKASTCHR-UHFFFAOYSA-N [Si](O)(O)(O)O.[P] Chemical compound [Si](O)(O)(O)O.[P] JOXCDOKKASTCHR-UHFFFAOYSA-N 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000007772 electrode material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To shorten a manufacturing process by forming a glass layer containing phosphorus, boron or arsenic on the surface of an oxidation film and by selectively removing the said film, thereby allowing to omit a selective oxidation process for the formation of a thick field oxidation film. CONSTITUTION:After forming a silicon oxidation film 20 by heat oxidation and phosphor silicic acid glass layer 30 on a substrate 10 using a CVD method, windows are opened for a source and a drain. Then a diffusion is performed in an atmosphere containing nitrogen, oxygen and phosphorus oxychloride, a source and a drain regions 11 and 12 are formed, an oxidation is performed in an oxygenous atmosphere and a silicon oxidation film 22 is formed. Then a PSG layer is selectively removed, an annealing is given and a step 25 is formed. Next, after an electrode window for the silicon oxidation film 22 is opened, an electrode material is coated and a patterning is performed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6596179A JPS55157267A (en) | 1979-05-28 | 1979-05-28 | Manufacturing method for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6596179A JPS55157267A (en) | 1979-05-28 | 1979-05-28 | Manufacturing method for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55157267A true JPS55157267A (en) | 1980-12-06 |
Family
ID=13302085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6596179A Pending JPS55157267A (en) | 1979-05-28 | 1979-05-28 | Manufacturing method for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55157267A (en) |
-
1979
- 1979-05-28 JP JP6596179A patent/JPS55157267A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS56115525A (en) | Manufacture of semiconductor device | |
| JPS56124270A (en) | Manufacture of semiconductor device | |
| JPS55157267A (en) | Manufacturing method for semiconductor device | |
| JPS5737830A (en) | Manufacture of semiconductor device | |
| JPS577939A (en) | Manufacture of semiconductor device | |
| JPS55157241A (en) | Manufacture of semiconductor device | |
| JPS57194525A (en) | Manufacture of semiconductor device | |
| JPS5763841A (en) | Preparation of semiconductor device | |
| JPS56146254A (en) | Manufacture of semiconductor device | |
| JPS55107229A (en) | Method of manufacturing semiconductor device | |
| JPS56131948A (en) | Manufacture of semiconductor element | |
| JPS55124238A (en) | Method of fabricating semiconductor device | |
| JPS56135973A (en) | Manufacture of semiconductor device | |
| JPS5693315A (en) | Manufacture of semiconductor device | |
| JPS5272162A (en) | Production of semiconductor device | |
| JPS5559778A (en) | Method of fabricating semiconductor device | |
| JPS6457673A (en) | Manufacture of thin film transistor | |
| JPS55145356A (en) | Fabricating method of semiconductor device | |
| JPS6474754A (en) | Semiconductor device | |
| JPS5710949A (en) | Manufacture of semiconductor device | |
| JPS5627923A (en) | Manufacture of semiconductor device | |
| JPS57160132A (en) | Manufacture of semiconductor device | |
| JPS56115523A (en) | Manufacture of semiconductor device | |
| JPS56148825A (en) | Manufacture of semiconductor device | |
| JPS55111125A (en) | Method for manufacture of semiconductor device |