JPS5515231A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device

Info

Publication number
JPS5515231A
JPS5515231A JP8799778A JP8799778A JPS5515231A JP S5515231 A JPS5515231 A JP S5515231A JP 8799778 A JP8799778 A JP 8799778A JP 8799778 A JP8799778 A JP 8799778A JP S5515231 A JPS5515231 A JP S5515231A
Authority
JP
Japan
Prior art keywords
layer
poly
mask
film
wiring layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8799778A
Other languages
Japanese (ja)
Other versions
JPS5644579B2 (en
Inventor
Tetsushi Sakai
Yoshiharu Kobayashi
Yasusuke Yamamoto
Hiroki Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP8799778A priority Critical patent/JPS5515231A/en
Priority to CA331,965A priority patent/CA1129118A/en
Priority to US06/058,417 priority patent/US4379001A/en
Priority to DE19792928923 priority patent/DE2928923A1/en
Priority to GB7924980A priority patent/GB2030002B/en
Priority to FR7918558A priority patent/FR2433833A1/en
Priority to NLAANVRAGE7905607,A priority patent/NL189102C/en
Publication of JPS5515231A publication Critical patent/JPS5515231A/en
Publication of JPS5644579B2 publication Critical patent/JPS5644579B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To arrange a wiring layer or a resistance layer spaced in a minute distance on a semiconductor substrate by etching the side face of a SiO2 film and poly Si film. CONSTITUTION:A poly Si 34 is made on a substate 33 having an insulation film 32 laminated on a semiconductor 31, a B-ion implantation and heat treatment are performed by using a two layer mask of Si2N435 and SiO236 to make a poly Si 34 conductive. Successively, the side face of the mask is selectively etched to form a SiO237. The SiO236 isremoved, the poly Si is etched by a mask 37 to form a layer 38 and 39. Successively, after completing the covering using a heat oxidization film 40, the mask 37 is removed, theheat treatment is preformed by injection of B,P and others and the poly silicon 8 is made conductive. By such a process, is formed with a very high density a device which has a wiring layer or a resistor layer 42 due to the layer 39 on thesubstarate 39 and a wiring layer or a resistor layer 43 due to the layer 41, separated from the substrated 33.
JP8799778A 1978-07-19 1978-07-19 Manufacturing method of semiconductor device Granted JPS5515231A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP8799778A JPS5515231A (en) 1978-07-19 1978-07-19 Manufacturing method of semiconductor device
CA331,965A CA1129118A (en) 1978-07-19 1979-07-17 Semiconductor devices and method of manufacturing the same
US06/058,417 US4379001A (en) 1978-07-19 1979-07-18 Method of making semiconductor devices
DE19792928923 DE2928923A1 (en) 1978-07-19 1979-07-18 SEMICONDUCTOR DEVICE
GB7924980A GB2030002B (en) 1978-07-19 1979-07-18 Semiconductor devices and methods of manufacturing them
FR7918558A FR2433833A1 (en) 1978-07-19 1979-07-18 SEMICONDUCTOR HAVING SILICON REGIONS IN THE FORM OF SPECIFICALLY PROFILE PROJECTIONS AND ITS MANUFACTURING METHOD
NLAANVRAGE7905607,A NL189102C (en) 1978-07-19 1979-07-19 TRANSISTOR AND METHOD FOR MANUFACTURING THAT.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8799778A JPS5515231A (en) 1978-07-19 1978-07-19 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5515231A true JPS5515231A (en) 1980-02-02
JPS5644579B2 JPS5644579B2 (en) 1981-10-20

Family

ID=13930429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8799778A Granted JPS5515231A (en) 1978-07-19 1978-07-19 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5515231A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5763856A (en) * 1980-10-07 1982-04-17 Oki Electric Ind Co Ltd Preparationof semiconductor element
JPS5856460A (en) * 1981-09-30 1983-04-04 Fujitsu Ltd Semiconductor device
JPS58106865A (en) * 1981-12-19 1983-06-25 Oki Electric Ind Co Ltd Manufacture of semiconductor element
JP2005005459A (en) * 2003-06-11 2005-01-06 New Japan Radio Co Ltd Method for manufacturing semiconductor device
US7770586B2 (en) 2003-01-15 2010-08-10 Kao Corporation Hair inserting tool

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5763856A (en) * 1980-10-07 1982-04-17 Oki Electric Ind Co Ltd Preparationof semiconductor element
JPS5856460A (en) * 1981-09-30 1983-04-04 Fujitsu Ltd Semiconductor device
JPH0239091B2 (en) * 1981-09-30 1990-09-04 Fujitsu Ltd
JPS58106865A (en) * 1981-12-19 1983-06-25 Oki Electric Ind Co Ltd Manufacture of semiconductor element
JPH0128509B2 (en) * 1981-12-19 1989-06-02 Oki Electric Ind Co Ltd
US7770586B2 (en) 2003-01-15 2010-08-10 Kao Corporation Hair inserting tool
JP2005005459A (en) * 2003-06-11 2005-01-06 New Japan Radio Co Ltd Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JPS5644579B2 (en) 1981-10-20

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