JPS561544A - Manufacture of semiconductor element - Google Patents
Manufacture of semiconductor elementInfo
- Publication number
- JPS561544A JPS561544A JP7737079A JP7737079A JPS561544A JP S561544 A JPS561544 A JP S561544A JP 7737079 A JP7737079 A JP 7737079A JP 7737079 A JP7737079 A JP 7737079A JP S561544 A JPS561544 A JP S561544A
- Authority
- JP
- Japan
- Prior art keywords
- approx
- sandblasting
- semiconductor element
- gradient angle
- peripheral surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Abstract
PURPOSE:To enhance the yield of a semiconductor element and reduce the depth of etching the element after sandblasting it by forming the gradient angle on the peripheral surface of the element at higher than 60 deg. at sandblasting time. CONSTITUTION:When employing abrasive having approx. #320 or #360 and approx. 4-5kg/cm<2> of blasting pressure, the gradient angle on the peripheral surface of a semiconductor element can be formed at approx. 60-70 deg. after sandblasting. When the gradient angle is thus formed at higher than 60 deg., the defective layer on the oblique surface becomes shallow to allow the etching depth of the element after sandblasting to be less than approx. 30mu so as to save the working time and the etchant and to further reduce the cutout and crack thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7737079A JPS561544A (en) | 1979-06-18 | 1979-06-18 | Manufacture of semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7737079A JPS561544A (en) | 1979-06-18 | 1979-06-18 | Manufacture of semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS561544A true JPS561544A (en) | 1981-01-09 |
Family
ID=13632003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7737079A Pending JPS561544A (en) | 1979-06-18 | 1979-06-18 | Manufacture of semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS561544A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5245754A (en) * | 1975-10-07 | 1977-04-11 | Daikin Ind Ltd | Method and device for confirming correct quantity of cooling medium in refrigerator unit |
| JPS6395066U (en) * | 1986-12-10 | 1988-06-18 | ||
| WO2003105244A1 (en) * | 2002-01-01 | 2003-12-18 | 古河電気工業株式会社 | Thermoelectric element module and method for fabricating the same |
-
1979
- 1979-06-18 JP JP7737079A patent/JPS561544A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5245754A (en) * | 1975-10-07 | 1977-04-11 | Daikin Ind Ltd | Method and device for confirming correct quantity of cooling medium in refrigerator unit |
| JPS6395066U (en) * | 1986-12-10 | 1988-06-18 | ||
| WO2003105244A1 (en) * | 2002-01-01 | 2003-12-18 | 古河電気工業株式会社 | Thermoelectric element module and method for fabricating the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS54110783A (en) | Semiconductor substrate and its manufacture | |
| EP0399735A3 (en) | X-ray lithography mask and method for manufacturing such a mask | |
| JPS561544A (en) | Manufacture of semiconductor element | |
| JPS5270781A (en) | Manufacture of semiconductor laser crystal piece | |
| EP0180430A3 (en) | A process of reducing a wafer size | |
| JPS57166399A (en) | Preparation of quartz vibrator | |
| JPS5520262A (en) | Production of sapphire single crystal substrate | |
| JPS5382174A (en) | Surface processing method for semiconductor device | |
| JPS5353288A (en) | Piezoelectric substrate | |
| JPS5339873A (en) | Etching method of silicon semiconductor substrate containing gold | |
| JPS644082A (en) | Manufacture of oscillatory type transducer | |
| JPS57197834A (en) | Manufacture of insulated and isolated substrate | |
| JPS51147623A (en) | A process for manufacturing silicon carbide fibers with high strength | |
| JPS53112673A (en) | Mask alignment method in semiconductor device manufacturing process and photo mask used for its execution | |
| JPS57128927A (en) | Manufacture of semiconductor integrated circuit | |
| JPS53116787A (en) | Production of semiconductor device | |
| JPS54148474A (en) | Manufacture of semiconductor device | |
| JPS5621337A (en) | Manufacture of semiconductor element | |
| JPS5411900A (en) | Method of fabricating piezo-electric substrate for use in elstic surface wave element | |
| JPS52113674A (en) | Production of semiconductor element | |
| JPS5516701A (en) | Method of manufacturing pneumatic cylinder | |
| JPS57104221A (en) | Plasma etching method | |
| JPS5656020A (en) | Manufacture of elastic surface wave device | |
| JPS56169346A (en) | Manufacture of semiconductor device | |
| JPS52132673A (en) | Production of gas discharge panel |