JPS5520262A - Production of sapphire single crystal substrate - Google Patents
Production of sapphire single crystal substrateInfo
- Publication number
- JPS5520262A JPS5520262A JP9314678A JP9314678A JPS5520262A JP S5520262 A JPS5520262 A JP S5520262A JP 9314678 A JP9314678 A JP 9314678A JP 9314678 A JP9314678 A JP 9314678A JP S5520262 A JPS5520262 A JP S5520262A
- Authority
- JP
- Japan
- Prior art keywords
- piece
- single crystal
- sapphire single
- diamond
- mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To prevent occurence of a crack, a crevice, etc. in the title substrate during additional processes by nonmechanically eliminating at least a rear strain layer out of working strain layers of each piece cut out of a sapphire single crystal lump and by mirror-finishing at least the piece surface.
CONSTITUTION: A sapphire single crystal lump is cut into about 0.3W0.5 mm thick pieces with an inner circumference type cutter or the like. After grinding both sides of each piece to about 0.1W3μm surface roughness with diamond or the like, working strain layers remaining at both sides are eliminated by a nonmechanical method as follows: for example, the piece is etched by being dipped in phosphoric acid or KOH heated to 200W300°C until the strain layers are eliminated. The surface alone of the piece is then mirror-polished to about 10W100Å surface roughness with diamond or the like to produce a sapphire single crystal substrate.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9314678A JPS5520262A (en) | 1978-08-01 | 1978-08-01 | Production of sapphire single crystal substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9314678A JPS5520262A (en) | 1978-08-01 | 1978-08-01 | Production of sapphire single crystal substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5520262A true JPS5520262A (en) | 1980-02-13 |
Family
ID=14074385
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9314678A Pending JPS5520262A (en) | 1978-08-01 | 1978-08-01 | Production of sapphire single crystal substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5520262A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002050577A (en) * | 2000-08-03 | 2002-02-15 | Namiki Precision Jewel Co Ltd | Sapphire substrate and its manufacturing method |
JP2007137736A (en) * | 2005-11-21 | 2007-06-07 | Shin Etsu Chem Co Ltd | Method for producing sapphire substrate |
JP2009051678A (en) * | 2007-08-24 | 2009-03-12 | Sumitomo Metal Mining Co Ltd | Manufacturing method of sapphire substrate |
JP2013027960A (en) * | 2011-07-29 | 2013-02-07 | Sumitomo Electric Ind Ltd | Silicon carbide substrate manufacturing method, and silicon carbide substrate |
-
1978
- 1978-08-01 JP JP9314678A patent/JPS5520262A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002050577A (en) * | 2000-08-03 | 2002-02-15 | Namiki Precision Jewel Co Ltd | Sapphire substrate and its manufacturing method |
JP2007137736A (en) * | 2005-11-21 | 2007-06-07 | Shin Etsu Chem Co Ltd | Method for producing sapphire substrate |
JP2009051678A (en) * | 2007-08-24 | 2009-03-12 | Sumitomo Metal Mining Co Ltd | Manufacturing method of sapphire substrate |
JP2013027960A (en) * | 2011-07-29 | 2013-02-07 | Sumitomo Electric Ind Ltd | Silicon carbide substrate manufacturing method, and silicon carbide substrate |
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