JPS5520262A - Production of sapphire single crystal substrate - Google Patents

Production of sapphire single crystal substrate

Info

Publication number
JPS5520262A
JPS5520262A JP9314678A JP9314678A JPS5520262A JP S5520262 A JPS5520262 A JP S5520262A JP 9314678 A JP9314678 A JP 9314678A JP 9314678 A JP9314678 A JP 9314678A JP S5520262 A JPS5520262 A JP S5520262A
Authority
JP
Japan
Prior art keywords
piece
single crystal
sapphire single
diamond
mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9314678A
Other languages
Japanese (ja)
Inventor
Nobuaki Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9314678A priority Critical patent/JPS5520262A/en
Publication of JPS5520262A publication Critical patent/JPS5520262A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To prevent occurence of a crack, a crevice, etc. in the title substrate during additional processes by nonmechanically eliminating at least a rear strain layer out of working strain layers of each piece cut out of a sapphire single crystal lump and by mirror-finishing at least the piece surface.
CONSTITUTION: A sapphire single crystal lump is cut into about 0.3W0.5 mm thick pieces with an inner circumference type cutter or the like. After grinding both sides of each piece to about 0.1W3μm surface roughness with diamond or the like, working strain layers remaining at both sides are eliminated by a nonmechanical method as follows: for example, the piece is etched by being dipped in phosphoric acid or KOH heated to 200W300°C until the strain layers are eliminated. The surface alone of the piece is then mirror-polished to about 10W100Å surface roughness with diamond or the like to produce a sapphire single crystal substrate.
COPYRIGHT: (C)1980,JPO&Japio
JP9314678A 1978-08-01 1978-08-01 Production of sapphire single crystal substrate Pending JPS5520262A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9314678A JPS5520262A (en) 1978-08-01 1978-08-01 Production of sapphire single crystal substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9314678A JPS5520262A (en) 1978-08-01 1978-08-01 Production of sapphire single crystal substrate

Publications (1)

Publication Number Publication Date
JPS5520262A true JPS5520262A (en) 1980-02-13

Family

ID=14074385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9314678A Pending JPS5520262A (en) 1978-08-01 1978-08-01 Production of sapphire single crystal substrate

Country Status (1)

Country Link
JP (1) JPS5520262A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002050577A (en) * 2000-08-03 2002-02-15 Namiki Precision Jewel Co Ltd Sapphire substrate and its manufacturing method
JP2007137736A (en) * 2005-11-21 2007-06-07 Shin Etsu Chem Co Ltd Method for producing sapphire substrate
JP2009051678A (en) * 2007-08-24 2009-03-12 Sumitomo Metal Mining Co Ltd Manufacturing method of sapphire substrate
JP2013027960A (en) * 2011-07-29 2013-02-07 Sumitomo Electric Ind Ltd Silicon carbide substrate manufacturing method, and silicon carbide substrate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002050577A (en) * 2000-08-03 2002-02-15 Namiki Precision Jewel Co Ltd Sapphire substrate and its manufacturing method
JP2007137736A (en) * 2005-11-21 2007-06-07 Shin Etsu Chem Co Ltd Method for producing sapphire substrate
JP2009051678A (en) * 2007-08-24 2009-03-12 Sumitomo Metal Mining Co Ltd Manufacturing method of sapphire substrate
JP2013027960A (en) * 2011-07-29 2013-02-07 Sumitomo Electric Ind Ltd Silicon carbide substrate manufacturing method, and silicon carbide substrate

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