JPS5698817A - Semiconductor substrate and its preparation - Google Patents

Semiconductor substrate and its preparation

Info

Publication number
JPS5698817A
JPS5698817A JP49480A JP49480A JPS5698817A JP S5698817 A JPS5698817 A JP S5698817A JP 49480 A JP49480 A JP 49480A JP 49480 A JP49480 A JP 49480A JP S5698817 A JPS5698817 A JP S5698817A
Authority
JP
Japan
Prior art keywords
area
multicrystal
layer
single crystal
noncrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49480A
Other languages
Japanese (ja)
Other versions
JPS634342B2 (en
Inventor
Masayoshi Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP49480A priority Critical patent/JPS5698817A/en
Publication of JPS5698817A publication Critical patent/JPS5698817A/en
Publication of JPS634342B2 publication Critical patent/JPS634342B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To prevent the occurrence of the crystal defect and the transformation of a wafer by forming a multicrystal or a noncrystal layer to a certain thickness around the outer circumference of a flat single crystal semiconductor area. CONSTITUTION:The attainment of the mechanical damage to the area 1 directly is prevented by surrounding the outer circumference of a flat single crystal area 1 with a multicrystal or noncrystal layer. In this case, a strain layer occurrs at the time of working around the edge of the area 1 is removed with a mixture of a nitric acid and a fluoric acid. Since there exists no concentrated place of stress in the single crystal area where the strain is removed, a yield strength is high. In other words, the occurrence of the dislocation and of the multiplication are difficult and the formation of the sliding zone is also difficult. Accordingly, a good wafer having a large diameter can be formed by this method. A multicrystal or a noncrystal layer having more then 0.5mm. in thickness is made to form an area of a circumference edge with a vapor growth method or the like on a rod ingot.
JP49480A 1980-01-09 1980-01-09 Semiconductor substrate and its preparation Granted JPS5698817A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP49480A JPS5698817A (en) 1980-01-09 1980-01-09 Semiconductor substrate and its preparation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49480A JPS5698817A (en) 1980-01-09 1980-01-09 Semiconductor substrate and its preparation

Publications (2)

Publication Number Publication Date
JPS5698817A true JPS5698817A (en) 1981-08-08
JPS634342B2 JPS634342B2 (en) 1988-01-28

Family

ID=11475302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49480A Granted JPS5698817A (en) 1980-01-09 1980-01-09 Semiconductor substrate and its preparation

Country Status (1)

Country Link
JP (1) JPS5698817A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006120865A (en) * 2004-10-21 2006-05-11 Sumco Corp Method of manufacturing semiconductor substrate, and semiconductor substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54101661A (en) * 1978-01-27 1979-08-10 Toshiba Corp Ingot for single crystal substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54101661A (en) * 1978-01-27 1979-08-10 Toshiba Corp Ingot for single crystal substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006120865A (en) * 2004-10-21 2006-05-11 Sumco Corp Method of manufacturing semiconductor substrate, and semiconductor substrate
JP4492293B2 (en) * 2004-10-21 2010-06-30 株式会社Ｓｕｍｃｏ Manufacturing method of semiconductor substrate

Also Published As

Publication number Publication date
JPS634342B2 (en) 1988-01-28

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