JPS57121220A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS57121220A
JPS57121220A JP818181A JP818181A JPS57121220A JP S57121220 A JPS57121220 A JP S57121220A JP 818181 A JP818181 A JP 818181A JP 818181 A JP818181 A JP 818181A JP S57121220 A JPS57121220 A JP S57121220A
Authority
JP
Japan
Prior art keywords
region
crystal
grow
manufacture
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP818181A
Other languages
Japanese (ja)
Inventor
Yoichi Akasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP818181A priority Critical patent/JPS57121220A/en
Publication of JPS57121220A publication Critical patent/JPS57121220A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To manufacture a semiconductor device formed with single crystal layers having the desired crystal axes at the arbitrary regions on the same substrate by a method wherein the graphoepitaxy method is applied. CONSTITUTION:As the fundamental consideration, for example, the region 20 having the first surface shape formed with regular grooves, and the region 21 having the second surface shape formed to have the regular sawtooth type section of which the mutual sloops cross at right angles with each other and incline at about 45 deg. to the original substrate plane, are provided on one sheet of quartz substrate 10, and semiconductor layers of polycrystalline or amorphous silicon, etc., are formed thereon by the graphoepitaxy method. Accordingly what is called 100 crystal having the 100 face on the surface is made to grow on the region 20, the 110 crystal is made to grow on the region 21, and the crystals having the crystal axes of two kinds can be made to grow on the same substrate.
JP818181A 1981-01-21 1981-01-21 Semiconductor device and manufacture thereof Pending JPS57121220A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP818181A JPS57121220A (en) 1981-01-21 1981-01-21 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP818181A JPS57121220A (en) 1981-01-21 1981-01-21 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57121220A true JPS57121220A (en) 1982-07-28

Family

ID=11686134

Family Applications (1)

Application Number Title Priority Date Filing Date
JP818181A Pending JPS57121220A (en) 1981-01-21 1981-01-21 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57121220A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6049109A (en) * 1994-09-14 2000-04-11 Kabushiki Kaisha Toshiba Silicon on Insulator semiconductor device with increased withstand voltage
US6338451B1 (en) 1996-06-13 2002-01-15 Doerfel G. Walter Cross cutting device for a winding machine

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6049109A (en) * 1994-09-14 2000-04-11 Kabushiki Kaisha Toshiba Silicon on Insulator semiconductor device with increased withstand voltage
US6338451B1 (en) 1996-06-13 2002-01-15 Doerfel G. Walter Cross cutting device for a winding machine

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