JPS57167655A - Manufacture of insulating isolation substrate - Google Patents
Manufacture of insulating isolation substrateInfo
- Publication number
- JPS57167655A JPS57167655A JP5334281A JP5334281A JPS57167655A JP S57167655 A JPS57167655 A JP S57167655A JP 5334281 A JP5334281 A JP 5334281A JP 5334281 A JP5334281 A JP 5334281A JP S57167655 A JPS57167655 A JP S57167655A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- oxide film
- silicon
- shaped grooves
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
PURPOSE:To minimize the warp of the dielectric isolation substrate by forming V-shaped grooves to both the surface and the back of the substrate, shaping an oxide film to the surface and a film made of a substance having a high thermal expansion coefficient to the back and forming single crystal Si islands to both the surface and the back. CONSTITUTION:Oxide films 21a, 21b are formed to the surface and back of the single crystal silicon substrate 20, the surface thereof is ground, and the V- shaped grooves 22 are molded so as to be distributed on the surface and the back at the same rate. The section, where the silicon substrate 20 is exposed, of the V-shaped grooves 22 of the surface is oxidized, and the surface of the substrate is coated with the oxide film 21. The film 24 made of the substance having the thermal expansion coefficient larger than the oxide film 21 is shaped to the back. silicon is grown onto the surface of the substrate 20, and polycrystal silicon 23a is deposited onto the surface. Polycrystal silicon 23b is deposited onto the back in shape that is thinner than the surface at the same time. The back is ground, and the oxide film 21 is exposed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5334281A JPS57167655A (en) | 1981-04-08 | 1981-04-08 | Manufacture of insulating isolation substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5334281A JPS57167655A (en) | 1981-04-08 | 1981-04-08 | Manufacture of insulating isolation substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57167655A true JPS57167655A (en) | 1982-10-15 |
JPS6155252B2 JPS6155252B2 (en) | 1986-11-27 |
Family
ID=12940087
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5334281A Granted JPS57167655A (en) | 1981-04-08 | 1981-04-08 | Manufacture of insulating isolation substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57167655A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1991017471A1 (en) * | 1990-04-27 | 1991-11-14 | Japan As Represented By Director General Of Agency Of Industrial Science And Technology | Optical valve device |
US5233211A (en) * | 1990-10-16 | 1993-08-03 | Agency Of Industrial Science And Technology | Semiconductor device for driving a light valve |
US5347154A (en) * | 1990-11-15 | 1994-09-13 | Seiko Instruments Inc. | Light valve device using semiconductive composite substrate |
US5434433A (en) * | 1992-08-19 | 1995-07-18 | Seiko Instruments Inc. | Semiconductor device for a light wave |
US5574292A (en) * | 1992-05-13 | 1996-11-12 | Seiko Instruments Inc. | Semiconductor device with monosilicon layer |
US5618739A (en) * | 1990-11-15 | 1997-04-08 | Seiko Instruments Inc. | Method of making light valve device using semiconductive composite substrate |
US5633176A (en) * | 1992-08-19 | 1997-05-27 | Seiko Instruments Inc. | Method of producing a semiconductor device for a light valve |
US5637187A (en) * | 1990-09-05 | 1997-06-10 | Seiko Instruments Inc. | Light valve device making |
US6191476B1 (en) | 1992-10-21 | 2001-02-20 | Seiko Instruments Inc. | Semiconductor device |
CN106098629A (en) * | 2016-07-21 | 2016-11-09 | 深圳市华星光电技术有限公司 | TFT substrate and preparation method thereof |
-
1981
- 1981-04-08 JP JP5334281A patent/JPS57167655A/en active Granted
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5982461A (en) * | 1990-04-27 | 1999-11-09 | Hayashi; Yutaka | Light valve device |
WO1991017471A1 (en) * | 1990-04-27 | 1991-11-14 | Japan As Represented By Director General Of Agency Of Industrial Science And Technology | Optical valve device |
US5637187A (en) * | 1990-09-05 | 1997-06-10 | Seiko Instruments Inc. | Light valve device making |
US6067062A (en) * | 1990-09-05 | 2000-05-23 | Seiko Instruments Inc. | Light valve device |
US5233211A (en) * | 1990-10-16 | 1993-08-03 | Agency Of Industrial Science And Technology | Semiconductor device for driving a light valve |
USRE36836E (en) * | 1990-10-16 | 2000-08-29 | Agency Of Industrial Science And Technology | Semiconductor device for driving a light valve |
US5926699A (en) * | 1990-10-16 | 1999-07-20 | Agency Of Industrial Science And Technology | Method of fabricating semiconductor device having stacked layer substrate |
US5759878A (en) * | 1990-10-16 | 1998-06-02 | Agency Of Industrial Science And Technology | Method of fabricating semiconductor device having epitaxially grown semiconductor single crystal film |
US5572045A (en) * | 1990-11-15 | 1996-11-05 | Seiko Instruments Inc. | Light valve device using semiconductive composite substrate |
US5728591A (en) * | 1990-11-15 | 1998-03-17 | Seiko Instruments Inc. | Process for manufacturing light valve device using semiconductive composite substrate |
US5618739A (en) * | 1990-11-15 | 1997-04-08 | Seiko Instruments Inc. | Method of making light valve device using semiconductive composite substrate |
US5486708A (en) * | 1990-11-15 | 1996-01-23 | Seiko Instruments Inc. | Light valve device using semiconductive composite substrate |
US5347154A (en) * | 1990-11-15 | 1994-09-13 | Seiko Instruments Inc. | Light valve device using semiconductive composite substrate |
US5574292A (en) * | 1992-05-13 | 1996-11-12 | Seiko Instruments Inc. | Semiconductor device with monosilicon layer |
US5633176A (en) * | 1992-08-19 | 1997-05-27 | Seiko Instruments Inc. | Method of producing a semiconductor device for a light valve |
US5434433A (en) * | 1992-08-19 | 1995-07-18 | Seiko Instruments Inc. | Semiconductor device for a light wave |
US6187605B1 (en) | 1992-08-19 | 2001-02-13 | Seiko Instruments Inc. | Method of forming a semiconductor device for a light valve |
US6191476B1 (en) | 1992-10-21 | 2001-02-20 | Seiko Instruments Inc. | Semiconductor device |
CN106098629A (en) * | 2016-07-21 | 2016-11-09 | 深圳市华星光电技术有限公司 | TFT substrate and preparation method thereof |
CN106098629B (en) * | 2016-07-21 | 2019-02-19 | 深圳市华星光电技术有限公司 | TFT substrate and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
JPS6155252B2 (en) | 1986-11-27 |
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