JPS57180147A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57180147A
JPS57180147A JP56065544A JP6554481A JPS57180147A JP S57180147 A JPS57180147 A JP S57180147A JP 56065544 A JP56065544 A JP 56065544A JP 6554481 A JP6554481 A JP 6554481A JP S57180147 A JPS57180147 A JP S57180147A
Authority
JP
Japan
Prior art keywords
junction
layer
single crystal
generated
sides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56065544A
Other languages
Japanese (ja)
Inventor
Yoshihiro Arimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56065544A priority Critical patent/JPS57180147A/en
Publication of JPS57180147A publication Critical patent/JPS57180147A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To eliminate generation of leakage current at the junction part of a semicoductor device by a method wherein a recessed part is formed in a single crystal insulator having the (100) face on the bottom and the (111) faces on the sides, and when the P-N junction is to be provided by making the Si single crystal region to act as the active region to grow therein, the P-N junction is made as not to be provided in the circumferential region. CONSTITUTION:An SiO2 film 8 is generated on an Si substrate 7 having the crystal face (100) on the surface, the film on the element forming region 9 is removed, anisotropic etching is performed using KOH, etc., making the remaining films 8 as the mask to form a funnel-shaped recessed part having the angel alpha of 54.7 deg., and the (100) face is made to be exposed on the bottom 10 and the (111) faces on the sides 11. Then the films 8 are removed, and a single crystal magnesia spinel layer 12 is made to grow vapor phase epitaxially on the whole surface, while at this time, the layer 12 of good quality is generated on the bottom 10, but the layers 12' having disorder of crystallinity are generated on the sides 11. Accordingly when the P-N junction is to be provided pilling up an N type Si layer 14 on the whole surfce interposing an N<+> type Si layer 13 between them, the junction is formed only on the bottom 10.
JP56065544A 1981-04-30 1981-04-30 Semiconductor device Pending JPS57180147A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56065544A JPS57180147A (en) 1981-04-30 1981-04-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56065544A JPS57180147A (en) 1981-04-30 1981-04-30 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57180147A true JPS57180147A (en) 1982-11-06

Family

ID=13290061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56065544A Pending JPS57180147A (en) 1981-04-30 1981-04-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57180147A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62156831A (en) * 1985-12-19 1987-07-11 シリコニクス　インコ−ポレイテツド Method for obtaining single crystal silicon region isolated electrically
JPH05121705A (en) * 1991-10-25 1993-05-18 Fujitsu Ltd Semiconductor device
JP2014183195A (en) * 2013-03-19 2014-09-29 Hitachi Ltd Semiconductor device and process of manufacturing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4923621A (en) * 1972-04-28 1974-03-02
JPS5019439A (en) * 1973-04-09 1975-02-28
JPS5116268A (en) * 1974-07-31 1976-02-09 Sumitomo Metal Ind DAISUSHUGOTAIBUNKAIKUMITATESOCHI

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4923621A (en) * 1972-04-28 1974-03-02
JPS5019439A (en) * 1973-04-09 1975-02-28
JPS5116268A (en) * 1974-07-31 1976-02-09 Sumitomo Metal Ind DAISUSHUGOTAIBUNKAIKUMITATESOCHI

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62156831A (en) * 1985-12-19 1987-07-11 シリコニクス　インコ−ポレイテツド Method for obtaining single crystal silicon region isolated electrically
JPH05121705A (en) * 1991-10-25 1993-05-18 Fujitsu Ltd Semiconductor device
JP2014183195A (en) * 2013-03-19 2014-09-29 Hitachi Ltd Semiconductor device and process of manufacturing the same

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