JPS52127166A - Manufacture of semiconductor - Google Patents
Manufacture of semiconductorInfo
- Publication number
- JPS52127166A JPS52127166A JP4364476A JP4364476A JPS52127166A JP S52127166 A JPS52127166 A JP S52127166A JP 4364476 A JP4364476 A JP 4364476A JP 4364476 A JP4364476 A JP 4364476A JP S52127166 A JPS52127166 A JP S52127166A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor
- manufacture
- isl
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To obtain suitable manufacture method for high integrated ISL by forming nearly same amount of quantity of thin film as that of SiO2, Si3N4 and multi-crystal Si, formed on the front side of Si substrate, on the back side of the substrate and by cancelling stress being due to difference of thermal expansion coefficient.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4364476A JPS52127166A (en) | 1976-04-19 | 1976-04-19 | Manufacture of semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4364476A JPS52127166A (en) | 1976-04-19 | 1976-04-19 | Manufacture of semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52127166A true JPS52127166A (en) | 1977-10-25 |
JPS616539B2 JPS616539B2 (en) | 1986-02-27 |
Family
ID=12669567
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4364476A Granted JPS52127166A (en) | 1976-04-19 | 1976-04-19 | Manufacture of semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52127166A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61191035A (en) * | 1985-02-20 | 1986-08-25 | Rohm Co Ltd | Manufacture of semiconductor device |
JPH01291430A (en) * | 1988-05-18 | 1989-11-24 | Fujitsu Ltd | Manufacture of semiconductor device |
JP2008177468A (en) * | 2007-01-22 | 2008-07-31 | Tokyo Electron Ltd | Processing method of substrate, coater and substrate treatment system |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4979780A (en) * | 1972-12-08 | 1974-08-01 | ||
JPS5010572A (en) * | 1973-05-25 | 1975-02-03 |
-
1976
- 1976-04-19 JP JP4364476A patent/JPS52127166A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4979780A (en) * | 1972-12-08 | 1974-08-01 | ||
JPS5010572A (en) * | 1973-05-25 | 1975-02-03 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61191035A (en) * | 1985-02-20 | 1986-08-25 | Rohm Co Ltd | Manufacture of semiconductor device |
JPH01291430A (en) * | 1988-05-18 | 1989-11-24 | Fujitsu Ltd | Manufacture of semiconductor device |
JP2008177468A (en) * | 2007-01-22 | 2008-07-31 | Tokyo Electron Ltd | Processing method of substrate, coater and substrate treatment system |
US8703400B2 (en) | 2007-01-22 | 2014-04-22 | Tokyo Electron Limited | Substrate treatment method, coating treatment apparatus, and substrate treatment system |
Also Published As
Publication number | Publication date |
---|---|
JPS616539B2 (en) | 1986-02-27 |
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