JPS543563A - Liquid crystal display element and production of the same - Google Patents
Liquid crystal display element and production of the sameInfo
- Publication number
- JPS543563A JPS543563A JP6794477A JP6794477A JPS543563A JP S543563 A JPS543563 A JP S543563A JP 6794477 A JP6794477 A JP 6794477A JP 6794477 A JP6794477 A JP 6794477A JP S543563 A JPS543563 A JP S543563A
- Authority
- JP
- Japan
- Prior art keywords
- production
- liquid crystal
- same
- crystal display
- display element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Crystal (AREA)
Abstract
PURPOSE: To obtain an element which has less serrations produced in orientation control film and does not produce induced domains by forming the orientation control film with a coating baked layer composed primarily of silicon oxide and a vapor grown layer composed primarily of silicon oxide formed by a vapor phase growth method.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6794477A JPS543563A (en) | 1977-06-10 | 1977-06-10 | Liquid crystal display element and production of the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6794477A JPS543563A (en) | 1977-06-10 | 1977-06-10 | Liquid crystal display element and production of the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS543563A true JPS543563A (en) | 1979-01-11 |
Family
ID=13359541
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6794477A Pending JPS543563A (en) | 1977-06-10 | 1977-06-10 | Liquid crystal display element and production of the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS543563A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5165076A (en) * | 1987-06-12 | 1992-11-17 | Canon Kabushiki Kaisha | Ferroelectric liquid crystal device with particular primer alignment, and liquid crystal layers |
-
1977
- 1977-06-10 JP JP6794477A patent/JPS543563A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5165076A (en) * | 1987-06-12 | 1992-11-17 | Canon Kabushiki Kaisha | Ferroelectric liquid crystal device with particular primer alignment, and liquid crystal layers |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5347765A (en) | Semiconductor crystal growth method | |
JPS543563A (en) | Liquid crystal display element and production of the same | |
JPS53126953A (en) | Liquid crystal display element | |
JPS5323266A (en) | Manufacture of fluorescent screen | |
JPS5434770A (en) | Semiconductor substrate and manufacture of semiconductor using it | |
JPS52106673A (en) | Crystal growing method and device thereof | |
JPS5288276A (en) | Liquid-phase epitaxial growth | |
JPS5211860A (en) | Liquid phase epitaxial device | |
JPS52117062A (en) | Liquid phase epitaxial growth process | |
JPS52155189A (en) | Multiple layer crystal growth | |
JPS5351964A (en) | Selective growth method for semiconductor crystal | |
JPS5270854A (en) | Liquid crystal indication device | |
JPS52115784A (en) | Liquid phase epitaxial growth | |
JPS53124460A (en) | Vapor deposition method of orientation film for liquid crystal display elements | |
JPS52150648A (en) | Production of liquid crystal element | |
JPS52115783A (en) | Liquid phase epitaxial growth | |
JPS5269560A (en) | Electronic line irradiation epitaxial method | |
JPS52154347A (en) | Low temperature single crystal thin film growth method | |
JPS5323560A (en) | Liquid phase epitaxial growth method | |
JPS52127500A (en) | Production of linb1-taxo3 single crystal film | |
JPS5337184A (en) | Epitaxially growing method in liquid phase | |
JPS53148274A (en) | Production of gaxin(1-x)sb thin film element | |
JPS51114147A (en) | A method of forming twist-nematic liquid crystal indicating element of field effct type | |
JPS53129063A (en) | Production of liquid crystal element | |
JPS52135264A (en) | Liquid phase epitaxial growth method |