JPS53148274A - Production of gaxin(1-x)sb thin film element - Google Patents

Production of gaxin(1-x)sb thin film element

Info

Publication number
JPS53148274A
JPS53148274A JP6211477A JP6211477A JPS53148274A JP S53148274 A JPS53148274 A JP S53148274A JP 6211477 A JP6211477 A JP 6211477A JP 6211477 A JP6211477 A JP 6211477A JP S53148274 A JPS53148274 A JP S53148274A
Authority
JP
Japan
Prior art keywords
gaxin
production
thin film
film element
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6211477A
Other languages
Japanese (ja)
Inventor
Muneyasu Nakajima
Nobuo Miyamoto
Nobuo Kodera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6211477A priority Critical patent/JPS53148274A/en
Publication of JPS53148274A publication Critical patent/JPS53148274A/en
Pending legal-status Critical Current

Links

Landscapes

  • Hall/Mr Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE: To produce a Gax In1-x Sb film which is good in crystallizability and is easy to control mixed crystal ratio by superposing an InSb film on the GaSb film on an insulating substrate and subjecting the films to melting treatment.
COPYRIGHT: (C)1978,JPO&Japio
JP6211477A 1977-05-30 1977-05-30 Production of gaxin(1-x)sb thin film element Pending JPS53148274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6211477A JPS53148274A (en) 1977-05-30 1977-05-30 Production of gaxin(1-x)sb thin film element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6211477A JPS53148274A (en) 1977-05-30 1977-05-30 Production of gaxin(1-x)sb thin film element

Publications (1)

Publication Number Publication Date
JPS53148274A true JPS53148274A (en) 1978-12-23

Family

ID=13190699

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6211477A Pending JPS53148274A (en) 1977-05-30 1977-05-30 Production of gaxin(1-x)sb thin film element

Country Status (1)

Country Link
JP (1) JPS53148274A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204136A (en) * 1981-06-01 1982-12-14 Texas Instruments Inc Method of producing semiconductor alloy having desired band gap

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204136A (en) * 1981-06-01 1982-12-14 Texas Instruments Inc Method of producing semiconductor alloy having desired band gap
JPH0525839B2 (en) * 1981-06-01 1993-04-14 Texas Instruments Inc

Similar Documents

Publication Publication Date Title
JPS53104156A (en) Manufacture for semiconductor device
JPS53148274A (en) Production of gaxin(1-x)sb thin film element
JPS5331964A (en) Production of semiconductor substrates
JPS53128285A (en) Semiconductor device and production of the same
JPS533088A (en) Production of mixed crystal magnetoelectric transducer thin film
JPS5386177A (en) Production of semiconductor device
JPS5211860A (en) Liquid phase epitaxial device
JPS5419681A (en) Dielectric isolating substrate and production of the same
JPS52109380A (en) Convertor for photoelectric
JPS5440073A (en) Film forming method
JPS5322382A (en) Production of dielectric isolating substrate
JPS52132787A (en) Hall element
JPS5368165A (en) Production of semiconductor device
JPS5389375A (en) Production of semiconductor device
JPS5380160A (en) Manufacture of substrate for semiconductor device
JPS52136571A (en) Production of semiconductor device
JPS53125776A (en) Manufacture for semiconductor device
JPS5354972A (en) Production of semiconductor device
JPS5252364A (en) Production of insb film
JPS5323266A (en) Manufacture of fluorescent screen
JPS5275276A (en) Production of semiconductor device
JPS543563A (en) Liquid crystal display element and production of the same
JPS536582A (en) Production of constant voltage semiconductor device
JPS5269560A (en) Electronic line irradiation epitaxial method
JPS52153677A (en) Sos type semiconductor device