JPS533088A - Production of mixed crystal magnetoelectric transducer thin film - Google Patents

Production of mixed crystal magnetoelectric transducer thin film

Info

Publication number
JPS533088A
JPS533088A JP7637576A JP7637576A JPS533088A JP S533088 A JPS533088 A JP S533088A JP 7637576 A JP7637576 A JP 7637576A JP 7637576 A JP7637576 A JP 7637576A JP S533088 A JPS533088 A JP S533088A
Authority
JP
Japan
Prior art keywords
production
thin film
magnetoelectric transducer
mixed crystal
transducer thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7637576A
Other languages
Japanese (ja)
Inventor
Muneyasu Nakajima
Nobuo Miyamoto
Tetsu Ooi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7637576A priority Critical patent/JPS533088A/en
Publication of JPS533088A publication Critical patent/JPS533088A/en
Pending legal-status Critical Current

Links

Landscapes

  • Hall/Mr Elements (AREA)

Abstract

PURPOSE: To obtain a hihg-sensitivity magnetoelectric transducer film by laminating Ga or a film containing Ga on an InSb film then performing diffusion and annealing in a vacuum thereafter controlling the Ga amount of the GaxIn1-xSb film by micro-zone melting.
COPYRIGHT: (C)1978,JPO&Japio
JP7637576A 1976-06-30 1976-06-30 Production of mixed crystal magnetoelectric transducer thin film Pending JPS533088A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7637576A JPS533088A (en) 1976-06-30 1976-06-30 Production of mixed crystal magnetoelectric transducer thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7637576A JPS533088A (en) 1976-06-30 1976-06-30 Production of mixed crystal magnetoelectric transducer thin film

Publications (1)

Publication Number Publication Date
JPS533088A true JPS533088A (en) 1978-01-12

Family

ID=13603584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7637576A Pending JPS533088A (en) 1976-06-30 1976-06-30 Production of mixed crystal magnetoelectric transducer thin film

Country Status (1)

Country Link
JP (1) JPS533088A (en)

Similar Documents

Publication Publication Date Title
JPS533088A (en) Production of mixed crystal magnetoelectric transducer thin film
JPS5331964A (en) Production of semiconductor substrates
JPS53128285A (en) Semiconductor device and production of the same
JPS52139376A (en) Production of semiconductor device
JPS53148274A (en) Production of gaxin(1-x)sb thin film element
JPS5376688A (en) Production of semiconductor device
JPS5253659A (en) Production of semiconductor element
JPS5211860A (en) Liquid phase epitaxial device
JPS52117900A (en) Growing method for single crystal thin film of bismuth oxide compounds
JPS5386177A (en) Production of semiconductor device
JPS5380160A (en) Manufacture of substrate for semiconductor device
JPS5289083A (en) Production of semiconductor photoelectric converting element
JPS531484A (en) Solar cell for watches
JPS5353266A (en) Probe card
JPS5374014A (en) Production of common terminal type thin film multitrack head
JPS52109380A (en) Convertor for photoelectric
JPS5440073A (en) Film forming method
JPS52132787A (en) Hall element
JPS52106673A (en) Crystal growing method and device thereof
JPS5290281A (en) Semiconductor laser device
JPS5288276A (en) Liquid-phase epitaxial growth
JPS5354972A (en) Production of semiconductor device
JPS52135684A (en) Production of semiconductor device
JPS5298473A (en) Thin film material
JPS5377168A (en) Production of semiconductor device