JPS5683025A - Formation of single crystal semiconductor film - Google Patents

Formation of single crystal semiconductor film

Info

Publication number
JPS5683025A
JPS5683025A JP15992279A JP15992279A JPS5683025A JP S5683025 A JPS5683025 A JP S5683025A JP 15992279 A JP15992279 A JP 15992279A JP 15992279 A JP15992279 A JP 15992279A JP S5683025 A JPS5683025 A JP S5683025A
Authority
JP
Japan
Prior art keywords
single crystal
reactive gas
epitaxial film
formation
semiconductor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15992279A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP15992279A priority Critical patent/JPS5683025A/en
Publication of JPS5683025A publication Critical patent/JPS5683025A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Abstract

PURPOSE:To enable formation of the thin epitaxial film with an excellent controllability by a method wherein Si or Ge reactive gas is maintained in a decompressed condition, it is activated or subject to a plasma using the inductive energy and then a chemical reaction is acted upon it. CONSTITUTION:The Si reactive gas, such as silane, dichlorosilane and the like, or Ge reactive gas, such as germanium hydride, germanium silicide and the like, is introduced in the tubular oven 7 wherein the substrate 10 to be processed is arranged in a decompressed condition (for instance, 0.01-100 Torr is suitable), and the Si or Ge epitaxial film is formed on the substrate by applying a high frequency energy. As a result, an excellent crystallizing property of the epitaxial film is obtained and the single crystal film as thin as 0.01-1mum can be formed with an excellent controllability.
JP15992279A 1979-12-10 1979-12-10 Formation of single crystal semiconductor film Pending JPS5683025A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15992279A JPS5683025A (en) 1979-12-10 1979-12-10 Formation of single crystal semiconductor film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15992279A JPS5683025A (en) 1979-12-10 1979-12-10 Formation of single crystal semiconductor film

Publications (1)

Publication Number Publication Date
JPS5683025A true JPS5683025A (en) 1981-07-07

Family

ID=15704080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15992279A Pending JPS5683025A (en) 1979-12-10 1979-12-10 Formation of single crystal semiconductor film

Country Status (1)

Country Link
JP (1) JPS5683025A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60143625A (en) * 1983-12-30 1985-07-29 Fujitsu Ltd Manufacture of semiconductor device
JPS61283113A (en) * 1985-06-10 1986-12-13 Sanyo Electric Co Ltd Epitaxial growth method

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JAPAN.J.APPL PHYS=1979 *
SOLID STATE ELECTRON=1968 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60143625A (en) * 1983-12-30 1985-07-29 Fujitsu Ltd Manufacture of semiconductor device
JPH0475650B2 (en) * 1983-12-30 1992-12-01 Fujitsu Ltd
JPS61283113A (en) * 1985-06-10 1986-12-13 Sanyo Electric Co Ltd Epitaxial growth method

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