JPS56169321A - Silicon carbide semiconductor - Google Patents

Silicon carbide semiconductor

Info

Publication number
JPS56169321A
JPS56169321A JP5560781A JP5560781A JPS56169321A JP S56169321 A JPS56169321 A JP S56169321A JP 5560781 A JP5560781 A JP 5560781A JP 5560781 A JP5560781 A JP 5560781A JP S56169321 A JPS56169321 A JP S56169321A
Authority
JP
Japan
Prior art keywords
gas
type
chamber
silicon carbide
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5560781A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP5560781A priority Critical patent/JPS56169321A/en
Publication of JPS56169321A publication Critical patent/JPS56169321A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To easily obtain a homogenous silicon carbide film by a method wherein the amorphous silicon carbide semiconductor, having the crystal size 10-2,000Angstrom or thereabouts and the hydrogen to be used for neutralizing of recoupling or halogen compound is added, is grown in vapor-phase using a low temperture plasma decompressing method. CONSTITUTION:An exhaust hole 6 is provided at one end of the reaction chamber 3 wherein a boat 2 made of quartz, having a plurality of substrates 1 such as stainless steel, silicon and the like installed in upright position, is stored and is connected to a vacuum pump 8 through the intermediary of a valve 11. Also, on a reaction gas lead-in port 9 provided at the other end, a container 7 where a high frequency induction energy 10 will be applied is provided and a P type or an N type impurities 15 and an H2 carrier gas are sent in the chamber 7. At the same time, the silcon gas 14 such as SiH4 and the like, the carbide gas 13 such as CH4 and the like and carrier gas 12 are sent to the chamber 7 through the intermediary of a mixer 17, and a P type or an N type SiC film are grown on the substrate 1 by bringing the inside of the reaction chamber 3 up to 10<-3> Torr and, at the same time, heating it up to 200-800 deg.C using the high frequency heating furnace 4, surrounding the reaction chamber 3, and a resistance heating heater 5.
JP5560781A 1981-04-15 1981-04-15 Silicon carbide semiconductor Pending JPS56169321A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5560781A JPS56169321A (en) 1981-04-15 1981-04-15 Silicon carbide semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5560781A JPS56169321A (en) 1981-04-15 1981-04-15 Silicon carbide semiconductor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP15288778A Division JPS5578524A (en) 1978-12-10 1978-12-10 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56169321A true JPS56169321A (en) 1981-12-26

Family

ID=13003448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5560781A Pending JPS56169321A (en) 1981-04-15 1981-04-15 Silicon carbide semiconductor

Country Status (1)

Country Link
JP (1) JPS56169321A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5983916A (en) * 1982-11-01 1984-05-15 Kanegafuchi Chem Ind Co Ltd Amorphous multielement semiconductor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS=1978 *
PHILOSOPHY MAGAZINE=1977 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5983916A (en) * 1982-11-01 1984-05-15 Kanegafuchi Chem Ind Co Ltd Amorphous multielement semiconductor

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