JPS5642350A - Formation of insulating film - Google Patents

Formation of insulating film

Info

Publication number
JPS5642350A
JPS5642350A JP11825579A JP11825579A JPS5642350A JP S5642350 A JPS5642350 A JP S5642350A JP 11825579 A JP11825579 A JP 11825579A JP 11825579 A JP11825579 A JP 11825579A JP S5642350 A JPS5642350 A JP S5642350A
Authority
JP
Japan
Prior art keywords
film
substrate
gas
sih4
furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11825579A
Other languages
Japanese (ja)
Other versions
JPS6125213B2 (en
Inventor
Hiroo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11825579A priority Critical patent/JPS5642350A/en
Publication of JPS5642350A publication Critical patent/JPS5642350A/en
Publication of JPS6125213B2 publication Critical patent/JPS6125213B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon

Abstract

PURPOSE:To form a PSG of high quality for short time by heating a semiconductor substrate while irradiating far ultraviolet rays thereto with PH3, SiH4 and N2O as reaction gases. CONSTITUTION:An Si substrate completely formed with elements and wires thereon is contained in a furnace, mixture gas of SiH4 including 2-10% of PH3 and N2 gas of 5-10 times the SiH4 is introduced with H2 as carrier gas, and the interior of the furnace is retained at 1-10Torr. Far ultraviolet rays are irradiated through the upper eall of the furnace, and N2O is thus excited, and the substrate is ratied at approx. 350 deg.C while activating the growing gas. SiO2.P2O5 is formed with the activated O*. According to such a method the growing temperature may be lowered by approx. 100 deg.C as compared with the ordinary pressure-reduced CVD process, and the growing speed becomes approx. 10 times. Thus, the PSG film can be obtained for short time. This reaction for producing the film is conducted on the surface of the substrate. The film thus becomes dense without causing vapor phase decomposition, and the PSG film having excellent insulating and protecting effects can be obtained.
JP11825579A 1979-09-14 1979-09-14 Formation of insulating film Granted JPS5642350A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11825579A JPS5642350A (en) 1979-09-14 1979-09-14 Formation of insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11825579A JPS5642350A (en) 1979-09-14 1979-09-14 Formation of insulating film

Publications (2)

Publication Number Publication Date
JPS5642350A true JPS5642350A (en) 1981-04-20
JPS6125213B2 JPS6125213B2 (en) 1986-06-14

Family

ID=14732080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11825579A Granted JPS5642350A (en) 1979-09-14 1979-09-14 Formation of insulating film

Country Status (1)

Country Link
JP (1) JPS5642350A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01220833A (en) * 1987-05-13 1989-09-04 Semiconductor Energy Lab Co Ltd High speed film forming method for silicon oxide coating film
CN110325310A (en) * 2017-03-17 2019-10-11 三菱综合材料株式会社 The manufacturing method of the manufacturing method of conjugant, the manufacturing method of insulate electrical substrate and the insulate electrical substrate having heat radiating fins

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08949U (en) * 1995-12-04 1996-06-11 井関農機株式会社 Agricultural traveling vehicle cabin

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JOURNAL ELECTROCHEMICAL SOCIETY=1979 *
PHOTOCHEMISTRY OF SMALL MOLECULES=1978 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01220833A (en) * 1987-05-13 1989-09-04 Semiconductor Energy Lab Co Ltd High speed film forming method for silicon oxide coating film
CN110325310A (en) * 2017-03-17 2019-10-11 三菱综合材料株式会社 The manufacturing method of the manufacturing method of conjugant, the manufacturing method of insulate electrical substrate and the insulate electrical substrate having heat radiating fins
CN110325310B (en) * 2017-03-17 2021-08-17 三菱综合材料株式会社 Method for manufacturing bonded body, method for manufacturing insulated circuit board, and method for manufacturing insulated circuit board with heat sink
US11478868B2 (en) 2017-03-17 2022-10-25 Mitsubishi Materials Corporation Method for producing bonded body, method for producing insulated circuit board, and method for producing insulated circuit board with heatsink

Also Published As

Publication number Publication date
JPS6125213B2 (en) 1986-06-14

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