JPS54152465A - Manufacture of epitaxial wafer - Google Patents

Manufacture of epitaxial wafer

Info

Publication number
JPS54152465A
JPS54152465A JP6149478A JP6149478A JPS54152465A JP S54152465 A JPS54152465 A JP S54152465A JP 6149478 A JP6149478 A JP 6149478A JP 6149478 A JP6149478 A JP 6149478A JP S54152465 A JPS54152465 A JP S54152465A
Authority
JP
Japan
Prior art keywords
susceptor
crystal
mirror
wafer
unevenness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6149478A
Other languages
Japanese (ja)
Inventor
Masahiro Kamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6149478A priority Critical patent/JPS54152465A/en
Publication of JPS54152465A publication Critical patent/JPS54152465A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a wafer with a few crystal defects such as a slip by mirror- finishing the surface of a susceptor, where a single-crystal substrate is to be mounted and by working this mirror-finished surface into a uniformly-rough surface with a little unevenness before epitaxial growth.
CONSTITUTION: On a carbon substrate for a susceptor, poly-crystal silicn carbide is deposited and th surface is mirror-finished. Next, this poly-crystal surface is sprayed with powder of silicon carbide by a sand blast method to obtain a rough surface, with uniform qulaity and no wave, small in unevenness between number 1000 and 1500 as shown in the figure. By epitaxial growth using this susceptor, no stress due to the unevenness of thermal conduction is applied to the wafer and since the roughness is small, no stress due to the contact with the susceptor is applied either, so that crystal defects such as the slip of the epitaxial grown wafer can be lessened.
COPYRIGHT: (C)1979,JPO&Japio
JP6149478A 1978-05-22 1978-05-22 Manufacture of epitaxial wafer Pending JPS54152465A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6149478A JPS54152465A (en) 1978-05-22 1978-05-22 Manufacture of epitaxial wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6149478A JPS54152465A (en) 1978-05-22 1978-05-22 Manufacture of epitaxial wafer

Publications (1)

Publication Number Publication Date
JPS54152465A true JPS54152465A (en) 1979-11-30

Family

ID=13172695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6149478A Pending JPS54152465A (en) 1978-05-22 1978-05-22 Manufacture of epitaxial wafer

Country Status (1)

Country Link
JP (1) JPS54152465A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02174116A (en) * 1988-12-26 1990-07-05 Toshiba Ceramics Co Ltd Susceptor
US6770144B2 (en) * 2000-07-25 2004-08-03 International Business Machines Corporation Multideposition SACVD reactor
JP2020198420A (en) * 2019-05-28 2020-12-10 信越半導体株式会社 Manufacturing method for epitaxial wafer and susceptor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02174116A (en) * 1988-12-26 1990-07-05 Toshiba Ceramics Co Ltd Susceptor
US6770144B2 (en) * 2000-07-25 2004-08-03 International Business Machines Corporation Multideposition SACVD reactor
JP2020198420A (en) * 2019-05-28 2020-12-10 信越半導体株式会社 Manufacturing method for epitaxial wafer and susceptor

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