JPS54139466A - Vapor growth device for semiconductor substrate - Google Patents
Vapor growth device for semiconductor substrateInfo
- Publication number
- JPS54139466A JPS54139466A JP4666778A JP4666778A JPS54139466A JP S54139466 A JPS54139466 A JP S54139466A JP 4666778 A JP4666778 A JP 4666778A JP 4666778 A JP4666778 A JP 4666778A JP S54139466 A JPS54139466 A JP S54139466A
- Authority
- JP
- Japan
- Prior art keywords
- vapor growth
- substrate
- semiconductor substrate
- growth device
- crack
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To avoid the slip or crack and thus to ensure good vapor growth by coating the SiO2 layer at the area where the support tool touches the fringe of the Si substrate.
CONSTITUTION: For support tool 13 of Si substrate 2, SiC23 of about 10 and SiO233 of above 3000Å are laminated on the surface of graphite 3. With application of the vapor growth to the single crystal Si layer under such structure as mentioned above, no slip or no crack is caused at the temperature lowering time after end of the growth since no vapor growth is applied to the supporter, thus obtaining a high- quality device. Furthermore, the Si film is grown at the unwanted part to prevent the lowering the Si molecul density on the surface of the substrate.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4666778A JPS54139466A (en) | 1978-04-21 | 1978-04-21 | Vapor growth device for semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4666778A JPS54139466A (en) | 1978-04-21 | 1978-04-21 | Vapor growth device for semiconductor substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54139466A true JPS54139466A (en) | 1979-10-29 |
Family
ID=12753695
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4666778A Pending JPS54139466A (en) | 1978-04-21 | 1978-04-21 | Vapor growth device for semiconductor substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54139466A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62293713A (en) * | 1986-06-13 | 1987-12-21 | Toshiba Ceramics Co Ltd | Susceptor for epitaxial growth equipment |
-
1978
- 1978-04-21 JP JP4666778A patent/JPS54139466A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62293713A (en) * | 1986-06-13 | 1987-12-21 | Toshiba Ceramics Co Ltd | Susceptor for epitaxial growth equipment |
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