JPS54139466A - Vapor growth device for semiconductor substrate - Google Patents

Vapor growth device for semiconductor substrate

Info

Publication number
JPS54139466A
JPS54139466A JP4666778A JP4666778A JPS54139466A JP S54139466 A JPS54139466 A JP S54139466A JP 4666778 A JP4666778 A JP 4666778A JP 4666778 A JP4666778 A JP 4666778A JP S54139466 A JPS54139466 A JP S54139466A
Authority
JP
Japan
Prior art keywords
vapor growth
substrate
semiconductor substrate
growth device
crack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4666778A
Other languages
Japanese (ja)
Inventor
Masakatsu Kojima
Taizo Ohashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4666778A priority Critical patent/JPS54139466A/en
Publication of JPS54139466A publication Critical patent/JPS54139466A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To avoid the slip or crack and thus to ensure good vapor growth by coating the SiO2 layer at the area where the support tool touches the fringe of the Si substrate.
CONSTITUTION: For support tool 13 of Si substrate 2, SiC23 of about 10 and SiO233 of above 3000Å are laminated on the surface of graphite 3. With application of the vapor growth to the single crystal Si layer under such structure as mentioned above, no slip or no crack is caused at the temperature lowering time after end of the growth since no vapor growth is applied to the supporter, thus obtaining a high- quality device. Furthermore, the Si film is grown at the unwanted part to prevent the lowering the Si molecul density on the surface of the substrate.
COPYRIGHT: (C)1979,JPO&Japio
JP4666778A 1978-04-21 1978-04-21 Vapor growth device for semiconductor substrate Pending JPS54139466A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4666778A JPS54139466A (en) 1978-04-21 1978-04-21 Vapor growth device for semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4666778A JPS54139466A (en) 1978-04-21 1978-04-21 Vapor growth device for semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS54139466A true JPS54139466A (en) 1979-10-29

Family

ID=12753695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4666778A Pending JPS54139466A (en) 1978-04-21 1978-04-21 Vapor growth device for semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS54139466A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62293713A (en) * 1986-06-13 1987-12-21 Toshiba Ceramics Co Ltd Susceptor for epitaxial growth equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62293713A (en) * 1986-06-13 1987-12-21 Toshiba Ceramics Co Ltd Susceptor for epitaxial growth equipment

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