JPS567486A - Method of discriminating gap single crystal wafer - Google Patents

Method of discriminating gap single crystal wafer

Info

Publication number
JPS567486A
JPS567486A JP8333779A JP8333779A JPS567486A JP S567486 A JPS567486 A JP S567486A JP 8333779 A JP8333779 A JP 8333779A JP 8333779 A JP8333779 A JP 8333779A JP S567486 A JPS567486 A JP S567486A
Authority
JP
Japan
Prior art keywords
wafer
etching
pits
single crystal
crystal wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8333779A
Other languages
Japanese (ja)
Other versions
JPS602789B2 (en
Inventor
Hiromi Takasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Tottori Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Tottori Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP54083337A priority Critical patent/JPS602789B2/en
Publication of JPS567486A publication Critical patent/JPS567486A/en
Publication of JPS602789B2 publication Critical patent/JPS602789B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds

Abstract

PURPOSE:To obtain a diode excellent in yield and luminous efficiency by subjecting it to etching prior to the growth and discriminating whether or not triangular pits are produced during the growth when an epitaxial layer is grown on a GaP single crystal wafer to fabricate the luminous diode. CONSTITUTION:When an epitaxial layer is grown on a GaP single crystal wafer to fabricate a luminous diode, etching is carried out using an RC etching liquid of 4ml H2O-5mgAgNO3-3mlHNO3-2mlHF to firstly inspect the state of occurrence of triangular pits. Then, the wafer is subjected to a heat treatment at a temperature of more than 800 deg.C substantially equal to the heat treatment temperature at the time of epitaxial growth, and subjected to etching by using an etching liquid the same the previously used etching liquid, the before and the after states of appearances of pits are compared with each other. In this manner, the quality of the wafer is determined from the before and after pit distribution states, and by use of a wafer in which the pits are not greatly varied, the subsequent step is carried out.
JP54083337A 1979-06-29 1979-06-29 How to identify GaP single crystal wafers Expired JPS602789B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54083337A JPS602789B2 (en) 1979-06-29 1979-06-29 How to identify GaP single crystal wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54083337A JPS602789B2 (en) 1979-06-29 1979-06-29 How to identify GaP single crystal wafers

Publications (2)

Publication Number Publication Date
JPS567486A true JPS567486A (en) 1981-01-26
JPS602789B2 JPS602789B2 (en) 1985-01-23

Family

ID=13799614

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54083337A Expired JPS602789B2 (en) 1979-06-29 1979-06-29 How to identify GaP single crystal wafers

Country Status (1)

Country Link
JP (1) JPS602789B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57171016A (en) * 1981-04-11 1982-10-21 Fuji Heavy Ind Ltd Controlling device for supplying secondary air in internal combustion engine
JPS60148137A (en) * 1984-01-13 1985-08-05 Nec Corp Appreciation for crystallinity of surface of single crystal semiconductor
JPS62174524A (en) * 1986-01-29 1987-07-31 Honda Motor Co Ltd Secondary air supply device for exhaust gas system of vehicle
JPS62174523A (en) * 1986-01-29 1987-07-31 Honda Motor Co Ltd Secondary air supply device for exhaust gas system of vehicle

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57171016A (en) * 1981-04-11 1982-10-21 Fuji Heavy Ind Ltd Controlling device for supplying secondary air in internal combustion engine
JPH0123649B2 (en) * 1981-04-11 1989-05-08 Fuji Heavy Ind Ltd
JPS60148137A (en) * 1984-01-13 1985-08-05 Nec Corp Appreciation for crystallinity of surface of single crystal semiconductor
JPS62174524A (en) * 1986-01-29 1987-07-31 Honda Motor Co Ltd Secondary air supply device for exhaust gas system of vehicle
JPS62174523A (en) * 1986-01-29 1987-07-31 Honda Motor Co Ltd Secondary air supply device for exhaust gas system of vehicle
JPH0339169B2 (en) * 1986-01-29 1991-06-13 Honda Motor Co Ltd
JPH0339168B2 (en) * 1986-01-29 1991-06-13 Honda Motor Co Ltd

Also Published As

Publication number Publication date
JPS602789B2 (en) 1985-01-23

Similar Documents

Publication Publication Date Title
JPS567486A (en) Method of discriminating gap single crystal wafer
JPS5236468A (en) Shallow diffusion method
JPS534778A (en) Crystal growth method with molecular beam
JPS5315299A (en) Liquid-phase epitaxial growth method of electrooptical crystals
JPS52104473A (en) Control method for crystal growth
JPS5423467A (en) Singlecrystal growing method for binary semiconductor
JPS52104474A (en) Control method for crystal growth
JPS52124199A (en) Production method of single-partitioned crystal
JPS52139363A (en) Heat treatment method for wafers
JPS5223507A (en) Method of forming programs for crystal growth
JPS5219300A (en) Method of poling ferromagnetic single crystals
JPS5568639A (en) Treating method of semiconductor surface with heat
JPS5740939A (en) P-n junction formation
JPS52144960A (en) Inspecting method of semiconductor wafers
JPS5671953A (en) Formation of semiconductor layer on insulated substrate
JPS51127957A (en) Fabrication method of bag nut
JPS5244562A (en) Epitaxial growth method
JPS5497585A (en) Manufacture of syngle crystal
Bagraev et al. Determination of the Spin Relaxation Time of Electrons in Si by the Method of Dynamic Polarization of 29-Si Nuclei Under Optical Pumping Conditions
JPS5226420A (en) Temperature testing process of transformer
JPS5232669A (en) Liquid-phase epitaxial growth method
JPS5242377A (en) Method of etching gaalas
JPS53102283A (en) Epitaxially growth method in liquid phase
JPS5216972A (en) Epitachisial growing method of semic-conductor of iii-v family chemica l compound
JPS52117426A (en) Removal of weeds in paddy field