JPS53102283A - Epitaxially growth method in liquid phase - Google Patents

Epitaxially growth method in liquid phase

Info

Publication number
JPS53102283A
JPS53102283A JP1695477A JP1695477A JPS53102283A JP S53102283 A JPS53102283 A JP S53102283A JP 1695477 A JP1695477 A JP 1695477A JP 1695477 A JP1695477 A JP 1695477A JP S53102283 A JPS53102283 A JP S53102283A
Authority
JP
Japan
Prior art keywords
liquid phase
growth method
epitaxially growth
heating furnace
epitaxially
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1695477A
Other languages
Japanese (ja)
Other versions
JPS5611677B2 (en
Inventor
Masaaki Oshima
Yukio Sekine
Masafumi Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1695477A priority Critical patent/JPS53102283A/en
Publication of JPS53102283A publication Critical patent/JPS53102283A/en
Publication of JPS5611677B2 publication Critical patent/JPS5611677B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To suppress the escape of O2 and to obtain the red luminescent diode having high luminescent efficiency, by installing the auxiliary heating furnace for holding the temperature higher than the first heating furance for forming the soaking zone for the growth of epitaxial layer over the above first heating furnace.
COPYRIGHT: (C)1978,JPO&Japio
JP1695477A 1977-02-17 1977-02-17 Epitaxially growth method in liquid phase Granted JPS53102283A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1695477A JPS53102283A (en) 1977-02-17 1977-02-17 Epitaxially growth method in liquid phase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1695477A JPS53102283A (en) 1977-02-17 1977-02-17 Epitaxially growth method in liquid phase

Publications (2)

Publication Number Publication Date
JPS53102283A true JPS53102283A (en) 1978-09-06
JPS5611677B2 JPS5611677B2 (en) 1981-03-16

Family

ID=11930497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1695477A Granted JPS53102283A (en) 1977-02-17 1977-02-17 Epitaxially growth method in liquid phase

Country Status (1)

Country Link
JP (1) JPS53102283A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02251119A (en) * 1989-03-24 1990-10-08 Shin Etsu Chem Co Ltd Manufacture of single-crystal magnetic film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02251119A (en) * 1989-03-24 1990-10-08 Shin Etsu Chem Co Ltd Manufacture of single-crystal magnetic film

Also Published As

Publication number Publication date
JPS5611677B2 (en) 1981-03-16

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