JPS5595330A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5595330A JPS5595330A JP126479A JP126479A JPS5595330A JP S5595330 A JPS5595330 A JP S5595330A JP 126479 A JP126479 A JP 126479A JP 126479 A JP126479 A JP 126479A JP S5595330 A JPS5595330 A JP S5595330A
- Authority
- JP
- Japan
- Prior art keywords
- core pipe
- furnace core
- substrate
- temperature
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To prevent the outbreak of an inferior substrate originated in a sharp difference in thermal stress by a method wherein SiC is used for a furnace core pipe to control its deformation and crack, and the temperature is raised and lowered at the specified speed.
CONSTITUTION: The temperature for inserting and taking a semiconductor substrate into and out of a furnace core pipe is set at 600°C, and it is raised to the specified level at <300°C/hr. It is also lowered from the one required for heat treatment at 100°C/hr. Further, if SiC is used for the furnace core pipe, the working ratio of the furnace core pipe and its life can be increased. Since this construction relieves a sharp difference in thermal stress added to the substrate by the process at a high temperature, it is possible to increase the characteristics of the semiconductor device, and reduce its costs.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP126479A JPS5595330A (en) | 1979-01-12 | 1979-01-12 | Preparation of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP126479A JPS5595330A (en) | 1979-01-12 | 1979-01-12 | Preparation of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5595330A true JPS5595330A (en) | 1980-07-19 |
Family
ID=11496588
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP126479A Pending JPS5595330A (en) | 1979-01-12 | 1979-01-12 | Preparation of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5595330A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57167638A (en) * | 1981-03-11 | 1982-10-15 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5821829A (en) * | 1981-07-31 | 1983-02-08 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6444023A (en) * | 1987-08-12 | 1989-02-16 | Hitachi Ltd | Heat treatment |
JPH06196430A (en) * | 1992-12-22 | 1994-07-15 | Showa Denko Kk | Annealing method for inp single crystal |
-
1979
- 1979-01-12 JP JP126479A patent/JPS5595330A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57167638A (en) * | 1981-03-11 | 1982-10-15 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6211782B2 (en) * | 1981-03-11 | 1987-03-14 | Fujitsu Ltd | |
JPS5821829A (en) * | 1981-07-31 | 1983-02-08 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6444023A (en) * | 1987-08-12 | 1989-02-16 | Hitachi Ltd | Heat treatment |
JPH06196430A (en) * | 1992-12-22 | 1994-07-15 | Showa Denko Kk | Annealing method for inp single crystal |
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