JPS5595330A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS5595330A
JPS5595330A JP126479A JP126479A JPS5595330A JP S5595330 A JPS5595330 A JP S5595330A JP 126479 A JP126479 A JP 126479A JP 126479 A JP126479 A JP 126479A JP S5595330 A JPS5595330 A JP S5595330A
Authority
JP
Japan
Prior art keywords
core pipe
furnace core
substrate
temperature
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP126479A
Other languages
Japanese (ja)
Inventor
Shoichi Kitane
Fumio Tobioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP126479A priority Critical patent/JPS5595330A/en
Publication of JPS5595330A publication Critical patent/JPS5595330A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To prevent the outbreak of an inferior substrate originated in a sharp difference in thermal stress by a method wherein SiC is used for a furnace core pipe to control its deformation and crack, and the temperature is raised and lowered at the specified speed.
CONSTITUTION: The temperature for inserting and taking a semiconductor substrate into and out of a furnace core pipe is set at 600°C, and it is raised to the specified level at <300°C/hr. It is also lowered from the one required for heat treatment at 100°C/hr. Further, if SiC is used for the furnace core pipe, the working ratio of the furnace core pipe and its life can be increased. Since this construction relieves a sharp difference in thermal stress added to the substrate by the process at a high temperature, it is possible to increase the characteristics of the semiconductor device, and reduce its costs.
COPYRIGHT: (C)1980,JPO&Japio
JP126479A 1979-01-12 1979-01-12 Preparation of semiconductor device Pending JPS5595330A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP126479A JPS5595330A (en) 1979-01-12 1979-01-12 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP126479A JPS5595330A (en) 1979-01-12 1979-01-12 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5595330A true JPS5595330A (en) 1980-07-19

Family

ID=11496588

Family Applications (1)

Application Number Title Priority Date Filing Date
JP126479A Pending JPS5595330A (en) 1979-01-12 1979-01-12 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5595330A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57167638A (en) * 1981-03-11 1982-10-15 Fujitsu Ltd Manufacture of semiconductor device
JPS5821829A (en) * 1981-07-31 1983-02-08 Fujitsu Ltd Manufacture of semiconductor device
JPS6444023A (en) * 1987-08-12 1989-02-16 Hitachi Ltd Heat treatment
JPH06196430A (en) * 1992-12-22 1994-07-15 Showa Denko Kk Annealing method for inp single crystal

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57167638A (en) * 1981-03-11 1982-10-15 Fujitsu Ltd Manufacture of semiconductor device
JPS6211782B2 (en) * 1981-03-11 1987-03-14 Fujitsu Ltd
JPS5821829A (en) * 1981-07-31 1983-02-08 Fujitsu Ltd Manufacture of semiconductor device
JPS6444023A (en) * 1987-08-12 1989-02-16 Hitachi Ltd Heat treatment
JPH06196430A (en) * 1992-12-22 1994-07-15 Showa Denko Kk Annealing method for inp single crystal

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