JPS57167638A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57167638A
JPS57167638A JP3502581A JP3502581A JPS57167638A JP S57167638 A JPS57167638 A JP S57167638A JP 3502581 A JP3502581 A JP 3502581A JP 3502581 A JP3502581 A JP 3502581A JP S57167638 A JPS57167638 A JP S57167638A
Authority
JP
Japan
Prior art keywords
temperature
treatment
rate
drop
rise
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3502581A
Other languages
Japanese (ja)
Other versions
JPS6211782B2 (en
Inventor
Kazunori Imaoka
Hideaki Ozawa
Takao Hiraguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3502581A priority Critical patent/JPS57167638A/en
Priority to DE8282301212T priority patent/DE3280219D1/en
Priority to EP19820301212 priority patent/EP0060676B1/en
Priority to IE55982A priority patent/IE55966B1/en
Publication of JPS57167638A publication Critical patent/JPS57167638A/en
Publication of JPS6211782B2 publication Critical patent/JPS6211782B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Abstract

PURPOSE:To prevent the extinguishment of a crystal defect by conducting a heat treating process at the temperature of 950 deg.C or higher in a heat treating process contaning a temperature rise to a high temperature from a low temperature and a temperature drop to the low temperature from the high temperature. CONSTITUTION:In the process such as the gate oxidizing process of a MOS type transistor, temperature treatment at 1,050 deg.C in a dried oxygen atmosphere is needed for approximately twenty min. in order to obtain the gate oxide film of approximately 350-400Angstrom . Low-temperature at 900 deg.C is conducted for seven min., temperature-rise treatment at the rate of 10 deg.C/min. for fifteen min., high- temperature treatment at 1,050 deg.C for ten min. and temperature-drop treatment at the rate of 5 deg.C/min. for thirty min. in the process, and a substrate is extracted from an oven at the point of time when the temperature reaches 900 deg.C. When the speed of the temperature rise or the temperature drop is the rate of 14 deg.C/min. or lower, heat treatment time at the high temperature can be shortened, and the extinguishment of the crystal defect in the substrate can be prevented.
JP3502581A 1981-03-11 1981-03-11 Manufacture of semiconductor device Granted JPS57167638A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP3502581A JPS57167638A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device
DE8282301212T DE3280219D1 (en) 1981-03-11 1982-03-10 METHOD FOR PRODUCING A SEMICONDUCTOR ARRANGEMENT WITH GLOWING A SEMICONDUCTOR BODY.
EP19820301212 EP0060676B1 (en) 1981-03-11 1982-03-10 A method for the production of a semiconductor device comprising annealing a silicon wafer
IE55982A IE55966B1 (en) 1981-03-11 1982-03-11 A method for the production of a semiconductor device comprising annealing a silicon wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3502581A JPS57167638A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57167638A true JPS57167638A (en) 1982-10-15
JPS6211782B2 JPS6211782B2 (en) 1987-03-14

Family

ID=12430513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3502581A Granted JPS57167638A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57167638A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821829A (en) * 1981-07-31 1983-02-08 Fujitsu Ltd Manufacture of semiconductor device
JPS6444023A (en) * 1987-08-12 1989-02-16 Hitachi Ltd Heat treatment
JPH01312840A (en) * 1988-06-10 1989-12-18 Fujitsu Ltd Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5595330A (en) * 1979-01-12 1980-07-19 Toshiba Corp Preparation of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5595330A (en) * 1979-01-12 1980-07-19 Toshiba Corp Preparation of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821829A (en) * 1981-07-31 1983-02-08 Fujitsu Ltd Manufacture of semiconductor device
JPS6444023A (en) * 1987-08-12 1989-02-16 Hitachi Ltd Heat treatment
JPH01312840A (en) * 1988-06-10 1989-12-18 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6211782B2 (en) 1987-03-14

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