JPS5797675A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5797675A JPS5797675A JP17425480A JP17425480A JPS5797675A JP S5797675 A JPS5797675 A JP S5797675A JP 17425480 A JP17425480 A JP 17425480A JP 17425480 A JP17425480 A JP 17425480A JP S5797675 A JPS5797675 A JP S5797675A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gate
- acute
- impurity
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000001154 acute effect Effects 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000004904 shortening Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
PURPOSE:To suppress the elongation of a diffused region in a semiconductor device by simultaneously performing the impurity diffusion of source and drain regions and the oxidation of a gate acute part and gap part, thereby shortening the heat treating time. CONSTITUTION:An oxidized film 12 and a polycrystalline silicon film 13 are formed on a P type silicon substrate 11, a resist film 14 is formed at the gate part and with the film 14 as a mask the films 12, 13 are etched and removed. In this manner, an acute part is formed at the film 13 of the gate part, and an air gap is formed at the film 12. Subsequently, a polycrystalline silicon film 15 doped with an N type impurity is grown in vapor phase, is then heat treated in high temperature oxidative atmosphere to diffuse the impurity from the film 15, thereby forming an N<+> type layer 16 and converting the film 15 into an oxidized film 15a. Accordingly, since the acute part of the gate and the air gap part are covered with the film 15a, it can prevent the damage and improper insulation of the gate part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17425480A JPS5797675A (en) | 1980-12-10 | 1980-12-10 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17425480A JPS5797675A (en) | 1980-12-10 | 1980-12-10 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5797675A true JPS5797675A (en) | 1982-06-17 |
Family
ID=15975405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17425480A Pending JPS5797675A (en) | 1980-12-10 | 1980-12-10 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5797675A (en) |
-
1980
- 1980-12-10 JP JP17425480A patent/JPS5797675A/en active Pending
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