JPS5541703A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5541703A JPS5541703A JP11362278A JP11362278A JPS5541703A JP S5541703 A JPS5541703 A JP S5541703A JP 11362278 A JP11362278 A JP 11362278A JP 11362278 A JP11362278 A JP 11362278A JP S5541703 A JPS5541703 A JP S5541703A
- Authority
- JP
- Japan
- Prior art keywords
- film
- base
- junction
- oxidation
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To control effectively the channel length of semiconductor and to protect the decline of action speed by forming diffusion layers having different deepness at the jointed part of pn junction with diffusing impurities having different diffusion coefficients.
CONSTITUTION: After the gate insulation film layers 23 more than one are formed on the base 21, the impurity added polycrystal Si film 24 is set on the insulation film 23. The thick oxidation film 25 is formed on the film 24 with oxidation and heat treatments in an oxygen gas phase, and then the oxidation film on the base 21 is eliminated by etching. The first pn juction is formed by diffusing an impurity having opposite conduction type to the base 21 with the Si film 24 and the oxidation film being on the film 24 as a mask, and then the second pn junction is formed by diffusion an impurity having opposite conduction type to the base 21 and different diffuson coefficient with the Si film 24 as a mask. In this case, the deepness at the jointed part of pn juncion is made so as to be larger than that of second pn junction. By so doing, it enables to control the channel length of semiconductor element and to protect the decline of action speed.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11362278A JPS5541703A (en) | 1978-09-18 | 1978-09-18 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11362278A JPS5541703A (en) | 1978-09-18 | 1978-09-18 | Production of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5541703A true JPS5541703A (en) | 1980-03-24 |
Family
ID=14616873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11362278A Pending JPS5541703A (en) | 1978-09-18 | 1978-09-18 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5541703A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0283936A (en) * | 1988-09-21 | 1990-03-26 | New Japan Radio Co Ltd | Manufacture of mos transistor |
| US5719065A (en) * | 1993-10-01 | 1998-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device with removable spacers |
| US8835271B2 (en) | 2002-04-09 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
| US9105727B2 (en) | 2002-04-09 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
| US10133139B2 (en) | 2002-05-17 | 2018-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
-
1978
- 1978-09-18 JP JP11362278A patent/JPS5541703A/en active Pending
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0283936A (en) * | 1988-09-21 | 1990-03-26 | New Japan Radio Co Ltd | Manufacture of mos transistor |
| US5719065A (en) * | 1993-10-01 | 1998-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device with removable spacers |
| US5945711A (en) * | 1993-10-01 | 1999-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a manufacturing method for the same |
| US6335555B1 (en) | 1993-10-01 | 2002-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a manufacturing method for the same |
| US6835607B2 (en) | 1993-10-01 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method for manufacturing the same |
| US7170138B2 (en) | 1993-10-01 | 2007-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US7301209B2 (en) | 1993-10-01 | 2007-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9105727B2 (en) | 2002-04-09 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
| US8835271B2 (en) | 2002-04-09 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
| US9406806B2 (en) | 2002-04-09 | 2016-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
| US9666614B2 (en) | 2002-04-09 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
| US10050065B2 (en) | 2002-04-09 | 2018-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
| US10083995B2 (en) | 2002-04-09 | 2018-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
| US10700106B2 (en) | 2002-04-09 | 2020-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
| US10854642B2 (en) | 2002-04-09 | 2020-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
| US11101299B2 (en) | 2002-04-09 | 2021-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
| US10133139B2 (en) | 2002-05-17 | 2018-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US10527903B2 (en) | 2002-05-17 | 2020-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US11422423B2 (en) | 2002-05-17 | 2022-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
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