JPS5541703A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5541703A
JPS5541703A JP11362278A JP11362278A JPS5541703A JP S5541703 A JPS5541703 A JP S5541703A JP 11362278 A JP11362278 A JP 11362278A JP 11362278 A JP11362278 A JP 11362278A JP S5541703 A JPS5541703 A JP S5541703A
Authority
JP
Japan
Prior art keywords
film
base
formed
oxidation
pn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11362278A
Inventor
Ryozo Nakayama
Sunao Shibata
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP11362278A priority Critical patent/JPS5541703A/en
Publication of JPS5541703A publication Critical patent/JPS5541703A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To control effectively the channel length of semiconductor and to protect the decline of action speed by forming diffusion layers having different deepness at the jointed part of pn junction with diffusing impurities having different diffusion coefficients.
CONSTITUTION: After the gate insulation film layers 23 more than one are formed on the base 21, the impurity added polycrystal Si film 24 is set on the insulation film 23. The thick oxidation film 25 is formed on the film 24 with oxidation and heat treatments in an oxygen gas phase, and then the oxidation film on the base 21 is eliminated by etching. The first pn juction is formed by diffusing an impurity having opposite conduction type to the base 21 with the Si film 24 and the oxidation film being on the film 24 as a mask, and then the second pn junction is formed by diffusion an impurity having opposite conduction type to the base 21 and different diffuson coefficient with the Si film 24 as a mask. In this case, the deepness at the jointed part of pn juncion is made so as to be larger than that of second pn junction. By so doing, it enables to control the channel length of semiconductor element and to protect the decline of action speed.
COPYRIGHT: (C)1980,JPO&Japio
JP11362278A 1978-09-18 1978-09-18 Production of semiconductor device Pending JPS5541703A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11362278A JPS5541703A (en) 1978-09-18 1978-09-18 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11362278A JPS5541703A (en) 1978-09-18 1978-09-18 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5541703A true JPS5541703A (en) 1980-03-24

Family

ID=14616873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11362278A Pending JPS5541703A (en) 1978-09-18 1978-09-18 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5541703A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0283936A (en) * 1988-09-21 1990-03-26 New Japan Radio Co Ltd Manufacture of mos transistor
US5719065A (en) * 1993-10-01 1998-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with removable spacers
US8835271B2 (en) 2002-04-09 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US9105727B2 (en) 2002-04-09 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US10133139B2 (en) 2002-05-17 2018-11-20 Semiconductor Energy Laboratory Co., Ltd. Display device
US10527903B2 (en) 2002-05-17 2020-01-07 Semiconductor Energy Laboratory Co., Ltd. Display device

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0283936A (en) * 1988-09-21 1990-03-26 New Japan Radio Co Ltd Manufacture of mos transistor
US5719065A (en) * 1993-10-01 1998-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with removable spacers
US5945711A (en) * 1993-10-01 1999-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a manufacturing method for the same
US6335555B1 (en) 1993-10-01 2002-01-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a manufacturing method for the same
US6835607B2 (en) 1993-10-01 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method for manufacturing the same
US7170138B2 (en) 1993-10-01 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7301209B2 (en) 1993-10-01 2007-11-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8835271B2 (en) 2002-04-09 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US9105727B2 (en) 2002-04-09 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US9406806B2 (en) 2002-04-09 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US9666614B2 (en) 2002-04-09 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US10050065B2 (en) 2002-04-09 2018-08-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US10083995B2 (en) 2002-04-09 2018-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US10133139B2 (en) 2002-05-17 2018-11-20 Semiconductor Energy Laboratory Co., Ltd. Display device
US10527903B2 (en) 2002-05-17 2020-01-07 Semiconductor Energy Laboratory Co., Ltd. Display device

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