JPS57117245A - Manufacture of semiconductor substrate - Google Patents

Manufacture of semiconductor substrate

Info

Publication number
JPS57117245A
JPS57117245A JP298981A JP298981A JPS57117245A JP S57117245 A JPS57117245 A JP S57117245A JP 298981 A JP298981 A JP 298981A JP 298981 A JP298981 A JP 298981A JP S57117245 A JPS57117245 A JP S57117245A
Authority
JP
Japan
Prior art keywords
defect
heat treatment
forming
layer
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP298981A
Other languages
Japanese (ja)
Inventor
Katsuhiko Morimune
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP298981A priority Critical patent/JPS57117245A/en
Publication of JPS57117245A publication Critical patent/JPS57117245A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Abstract

PURPOSE:To prevent the creation of pin holes in oxidation process by forming a defect layer inside and a non-defect layer on the surface by a high temperature heat treatment in a nitrogen atmosphere after forming a oxide layer of 850- 1,200Angstrom on the surface of a single crystal silicon substrate. CONSTITUTION:Crystal defect nucleous is created by a low temperature (600- 800 deg.C) heat treatment in the oxygen atmosphere on a single crystal silicon substrate 11. An oxide film 12 is formed by heat oxidation in an oxygen atmosphere at 1,000 deg.C. A heat treatment in the nitrogen atmosphere at 1,050-1,150 deg.C for 6-8hr is performed. The nucleous of crystal defect is grown in the crystal defect forming a defect layer 13 inside a substrate 11 and a non-defect layers 14, 15 are formed on the surface.
JP298981A 1981-01-12 1981-01-12 Manufacture of semiconductor substrate Pending JPS57117245A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP298981A JPS57117245A (en) 1981-01-12 1981-01-12 Manufacture of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP298981A JPS57117245A (en) 1981-01-12 1981-01-12 Manufacture of semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS57117245A true JPS57117245A (en) 1982-07-21

Family

ID=11544779

Family Applications (1)

Application Number Title Priority Date Filing Date
JP298981A Pending JPS57117245A (en) 1981-01-12 1981-01-12 Manufacture of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS57117245A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60133734A (en) * 1983-12-21 1985-07-16 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60133734A (en) * 1983-12-21 1985-07-16 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH026223B2 (en) * 1983-12-21 1990-02-08 Mitsubishi Electric Corp

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