JPS6457521A - Manufacture of superconducting thin film - Google Patents

Manufacture of superconducting thin film

Info

Publication number
JPS6457521A
JPS6457521A JP62211410A JP21141087A JPS6457521A JP S6457521 A JPS6457521 A JP S6457521A JP 62211410 A JP62211410 A JP 62211410A JP 21141087 A JP21141087 A JP 21141087A JP S6457521 A JPS6457521 A JP S6457521A
Authority
JP
Japan
Prior art keywords
thin film
substrate
crystallized
constitution
high temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62211410A
Other languages
Japanese (ja)
Inventor
Yasutaka Tamura
Akira Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62211410A priority Critical patent/JPS6457521A/en
Publication of JPS6457521A publication Critical patent/JPS6457521A/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E40/00Technologies for an efficient electrical power generation, transmission or distribution
    • Y02E40/60Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment

Abstract

PURPOSE:To eliminate possible deterioration of devices caused by heat treatment at high temperature as well as to enable those such as superconducting devices, the relative wiring of semiconductor integrated circuits and the like to be formed by depositing a thin film whose composition ratio of a superconductor in an oxide series contains atoms on a substrate, and introducing oxygen onto said thin film after said film has been crystallized by means of short time annealing capable of selectively heating said thin film. CONSTITUTION:A thin film 2 formed by Y1Ba2Cu3Ox is deposited on a substrate (YSZ) 1 made of yttria stabilized zirconia, then, the thin film 2 is crystallized with CW-Ar laser beams scanned. In the second place, the thin film is put into a cylindrical plasma reactor 11 together with the substrate thereof so as to let a plasma treatment be processed with oxygen introduced. owing to this constitution, a heat conducting thin film constituted by Y1Ba2Cu3O7-delta can be formed with no heat treatment processed at high temperature.
JP62211410A 1987-08-27 1987-08-27 Manufacture of superconducting thin film Pending JPS6457521A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62211410A JPS6457521A (en) 1987-08-27 1987-08-27 Manufacture of superconducting thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62211410A JPS6457521A (en) 1987-08-27 1987-08-27 Manufacture of superconducting thin film

Publications (1)

Publication Number Publication Date
JPS6457521A true JPS6457521A (en) 1989-03-03

Family

ID=16605495

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62211410A Pending JPS6457521A (en) 1987-08-27 1987-08-27 Manufacture of superconducting thin film

Country Status (1)

Country Link
JP (1) JPS6457521A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6489572A (en) * 1987-09-30 1989-04-04 Nec Corp Manufacture of high temperature superconducting thin film
US5173474A (en) * 1990-04-18 1992-12-22 Xerox Corporation Silicon substrate having an epitaxial superconducting layer thereon and method of making same
US5358925A (en) * 1990-04-18 1994-10-25 Board Of Trustees Of The Leland Stanford Junior University Silicon substrate having YSZ epitaxial barrier layer and an epitaxial superconducting layer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6489572A (en) * 1987-09-30 1989-04-04 Nec Corp Manufacture of high temperature superconducting thin film
US5173474A (en) * 1990-04-18 1992-12-22 Xerox Corporation Silicon substrate having an epitaxial superconducting layer thereon and method of making same
US5358925A (en) * 1990-04-18 1994-10-25 Board Of Trustees Of The Leland Stanford Junior University Silicon substrate having YSZ epitaxial barrier layer and an epitaxial superconducting layer

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