JPS6457521A - Manufacture of superconducting thin film - Google Patents
Manufacture of superconducting thin filmInfo
- Publication number
- JPS6457521A JPS6457521A JP62211410A JP21141087A JPS6457521A JP S6457521 A JPS6457521 A JP S6457521A JP 62211410 A JP62211410 A JP 62211410A JP 21141087 A JP21141087 A JP 21141087A JP S6457521 A JPS6457521 A JP S6457521A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- crystallized
- constitution
- high temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Abstract
PURPOSE:To eliminate possible deterioration of devices caused by heat treatment at high temperature as well as to enable those such as superconducting devices, the relative wiring of semiconductor integrated circuits and the like to be formed by depositing a thin film whose composition ratio of a superconductor in an oxide series contains atoms on a substrate, and introducing oxygen onto said thin film after said film has been crystallized by means of short time annealing capable of selectively heating said thin film. CONSTITUTION:A thin film 2 formed by Y1Ba2Cu3Ox is deposited on a substrate (YSZ) 1 made of yttria stabilized zirconia, then, the thin film 2 is crystallized with CW-Ar laser beams scanned. In the second place, the thin film is put into a cylindrical plasma reactor 11 together with the substrate thereof so as to let a plasma treatment be processed with oxygen introduced. owing to this constitution, a heat conducting thin film constituted by Y1Ba2Cu3O7-delta can be formed with no heat treatment processed at high temperature.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62211410A JPS6457521A (en) | 1987-08-27 | 1987-08-27 | Manufacture of superconducting thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62211410A JPS6457521A (en) | 1987-08-27 | 1987-08-27 | Manufacture of superconducting thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6457521A true JPS6457521A (en) | 1989-03-03 |
Family
ID=16605495
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62211410A Pending JPS6457521A (en) | 1987-08-27 | 1987-08-27 | Manufacture of superconducting thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6457521A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6489572A (en) * | 1987-09-30 | 1989-04-04 | Nec Corp | Manufacture of high temperature superconducting thin film |
US5173474A (en) * | 1990-04-18 | 1992-12-22 | Xerox Corporation | Silicon substrate having an epitaxial superconducting layer thereon and method of making same |
US5358925A (en) * | 1990-04-18 | 1994-10-25 | Board Of Trustees Of The Leland Stanford Junior University | Silicon substrate having YSZ epitaxial barrier layer and an epitaxial superconducting layer |
-
1987
- 1987-08-27 JP JP62211410A patent/JPS6457521A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6489572A (en) * | 1987-09-30 | 1989-04-04 | Nec Corp | Manufacture of high temperature superconducting thin film |
US5173474A (en) * | 1990-04-18 | 1992-12-22 | Xerox Corporation | Silicon substrate having an epitaxial superconducting layer thereon and method of making same |
US5358925A (en) * | 1990-04-18 | 1994-10-25 | Board Of Trustees Of The Leland Stanford Junior University | Silicon substrate having YSZ epitaxial barrier layer and an epitaxial superconducting layer |
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