JPS6466956A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6466956A JPS6466956A JP62224478A JP22447887A JPS6466956A JP S6466956 A JPS6466956 A JP S6466956A JP 62224478 A JP62224478 A JP 62224478A JP 22447887 A JP22447887 A JP 22447887A JP S6466956 A JPS6466956 A JP S6466956A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- superconductor
- thermal expansion
- oxide superconductor
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000002887 superconductor Substances 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 4
- 238000010438 heat treatment Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910009203 Y-Ba-Cu-O Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent the generation of cracks in a superconductor wiring by using a substance, the difference of a thermal expansion coefficient of which with a superconductor is kept within twice, as a substrate and forming a thin insulator layer between the substrate and a semiconductor layer. CONSTITUTION:A Y-Ba-Cu-O group oxide superconductor 4 is employed as a wiring, and a MOS type FET having SOI structure is shaped. The thermal expansion coefficients of an silicon film 7 and oxide films 6, 22 largely differ from that of the oxide superconductor 4, but thickness is thinned as approximately 2mum, and stress generated at the time of the heat treatment of the formation of the oxide superconductor is reduced. A substrate 11 is composed of YSZ, a thermal expansion coefficient of which does not differ twice or more, and no stress is generated between the substrate 11 and the oxide superconductor 4 to heat treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62224478A JPS6466956A (en) | 1987-09-08 | 1987-09-08 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62224478A JPS6466956A (en) | 1987-09-08 | 1987-09-08 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6466956A true JPS6466956A (en) | 1989-03-13 |
Family
ID=16814424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62224478A Pending JPS6466956A (en) | 1987-09-08 | 1987-09-08 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6466956A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10291231B2 (en) | 2016-07-20 | 2019-05-14 | Microsoft Technology Licensing, Llc | Superconducting device with dummy elements |
-
1987
- 1987-09-08 JP JP62224478A patent/JPS6466956A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10291231B2 (en) | 2016-07-20 | 2019-05-14 | Microsoft Technology Licensing, Llc | Superconducting device with dummy elements |
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