JPS6455846A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6455846A
JPS6455846A JP62213412A JP21341287A JPS6455846A JP S6455846 A JPS6455846 A JP S6455846A JP 62213412 A JP62213412 A JP 62213412A JP 21341287 A JP21341287 A JP 21341287A JP S6455846 A JPS6455846 A JP S6455846A
Authority
JP
Japan
Prior art keywords
film
silicide
thin film
forming
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62213412A
Other languages
Japanese (ja)
Inventor
Takashi Hirao
Kentaro Setsune
Takeshi Kamata
Kiyotaka Wasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62213412A priority Critical patent/JPS6455846A/en
Publication of JPS6455846A publication Critical patent/JPS6455846A/en
Pending legal-status Critical Current

Links

Landscapes

  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To utilize a ceramic oxide superconducting thin film as wirings for a V-LSI by forming a high melting point thin film or a silicide compound thin film for forming a silicide with at least an impurity layer over an insulating film from the impurity layer, and forming a ceramic oxide superconducting film on the thin film disposed on the insulating film. CONSTITUTION:After an SiO2 film 2 is formed by a thermal oxidizing method on a P-type Si substrate 1, the film 2 is selectively opened, As<+> ions are implanted as normal, then heat treated in N2 gas at 900 deg.C to form a high concentration n<+> type region 6. Thereafter, after a platinum film 3 is formed by a sputtering method or an electron beam depositing method, it is heat treated at 250 deg.C to form a platinum silicide film 4. Thereafter, it is sputtered with a target of (Y0.33Ba0.66)0.66Cu3O7-delta to form a Y-Ba-Cu-O film 5 on the whole face. The substrate temperature is set to 700 deg.C at this time. Thus, it is effectively brought in contact by the silicide 4 with the region 6 of the substrate 1.
JP62213412A 1987-08-27 1987-08-27 Semiconductor device Pending JPS6455846A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62213412A JPS6455846A (en) 1987-08-27 1987-08-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62213412A JPS6455846A (en) 1987-08-27 1987-08-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6455846A true JPS6455846A (en) 1989-03-02

Family

ID=16638798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62213412A Pending JPS6455846A (en) 1987-08-27 1987-08-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6455846A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01218045A (en) * 1988-02-26 1989-08-31 Nec Corp Semiconductor device
EP0444893A2 (en) * 1990-02-28 1991-09-04 Westinghouse Electric Corporation Method of making ohmic contacts between semiconductors and oxide superconductors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01218045A (en) * 1988-02-26 1989-08-31 Nec Corp Semiconductor device
EP0444893A2 (en) * 1990-02-28 1991-09-04 Westinghouse Electric Corporation Method of making ohmic contacts between semiconductors and oxide superconductors

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