JPS6428842A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS6428842A JPS6428842A JP18479687A JP18479687A JPS6428842A JP S6428842 A JPS6428842 A JP S6428842A JP 18479687 A JP18479687 A JP 18479687A JP 18479687 A JP18479687 A JP 18479687A JP S6428842 A JPS6428842 A JP S6428842A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polycrystalline
- titanium silicide
- annealing
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 3
- 229910021341 titanium silicide Inorganic materials 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent the reaction between a titanium silicide film and an insulating film, and improve the reliability, by covering the surface of a titanium silicide film formed on the surface of a polycrystalline Si electrode or a wiring with a titanium nitride film. CONSTITUTION:On an active region except an element isolation oxide film 12 on a substrate 11, a gate oxide film 13 is formed, and thereon polycrystalline silicon is formed as a gate electrode. After ion is implanted in the substrate 11, a diffusion layer 15 is formed by heat treatment. After coating of a Ti film, a titanium silicide film 17 is formed on the diffusion layer 15 and a polycrystalline layer 14, by annealing at a temperature of 600 deg.C in a nitrogen atmosphere. Next, a titanium nitride film 18 is formed on the film 17 surface, by annealing at a temperature of 850-950 deg.C in nitrogen. After depositing of an interlayer insulating film 20, a contact hole is formed, and Al is deposited. A wiring 21 is formed by patterning.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62184796A JPH0748495B2 (en) | 1987-07-23 | 1987-07-23 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62184796A JPH0748495B2 (en) | 1987-07-23 | 1987-07-23 | Method for manufacturing semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6428842A true JPS6428842A (en) | 1989-01-31 |
JPH0748495B2 JPH0748495B2 (en) | 1995-05-24 |
Family
ID=16159442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62184796A Expired - Lifetime JPH0748495B2 (en) | 1987-07-23 | 1987-07-23 | Method for manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0748495B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100238219B1 (en) * | 1996-12-13 | 2000-01-15 | 윤종용 | Gate pattern in silicon processing |
KR100365749B1 (en) * | 1995-12-29 | 2003-03-03 | 주식회사 하이닉스반도체 | A method for fabrication of semiconductor device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61137367A (en) * | 1984-12-10 | 1986-06-25 | Hitachi Ltd | Manufacture of semiconductor integrated circuit device |
JPS6261345A (en) * | 1985-09-11 | 1987-03-18 | Hitachi Ltd | Manufacture of semiconductor device |
JPS6263448A (en) * | 1986-09-29 | 1987-03-20 | Hitachi Ltd | Wiring structure in semiconductor element |
JPS6298642A (en) * | 1985-10-25 | 1987-05-08 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
JPS6312152A (en) * | 1986-07-02 | 1988-01-19 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
-
1987
- 1987-07-23 JP JP62184796A patent/JPH0748495B2/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61137367A (en) * | 1984-12-10 | 1986-06-25 | Hitachi Ltd | Manufacture of semiconductor integrated circuit device |
JPS6261345A (en) * | 1985-09-11 | 1987-03-18 | Hitachi Ltd | Manufacture of semiconductor device |
JPS6298642A (en) * | 1985-10-25 | 1987-05-08 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
JPS6312152A (en) * | 1986-07-02 | 1988-01-19 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
JPS6263448A (en) * | 1986-09-29 | 1987-03-20 | Hitachi Ltd | Wiring structure in semiconductor element |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100365749B1 (en) * | 1995-12-29 | 2003-03-03 | 주식회사 하이닉스반도체 | A method for fabrication of semiconductor device |
KR100238219B1 (en) * | 1996-12-13 | 2000-01-15 | 윤종용 | Gate pattern in silicon processing |
Also Published As
Publication number | Publication date |
---|---|
JPH0748495B2 (en) | 1995-05-24 |
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