JPS6444023A - Heat treatment - Google Patents

Heat treatment

Info

Publication number
JPS6444023A
JPS6444023A JP19969487A JP19969487A JPS6444023A JP S6444023 A JPS6444023 A JP S6444023A JP 19969487 A JP19969487 A JP 19969487A JP 19969487 A JP19969487 A JP 19969487A JP S6444023 A JPS6444023 A JP S6444023A
Authority
JP
Japan
Prior art keywords
substrate
thermal stress
temperature
temperature side
temperature rising
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19969487A
Other languages
Japanese (ja)
Other versions
JP2675011B2 (en
Inventor
Shizunori Oyu
Nobuyoshi Kashu
Yasuo Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62199694A priority Critical patent/JP2675011B2/en
Publication of JPS6444023A publication Critical patent/JPS6444023A/en
Application granted granted Critical
Publication of JP2675011B2 publication Critical patent/JP2675011B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a heat treating method which can reduce a thermal stress of a substrate to be heat treated and also optimize temperature rising/dropping time and particularly temperature dropping time by controlling temperature rising speed and cooling speed so that the actual temperature of the substrate to be treated is low on the high temperature side and high on the low temperature side. CONSTITUTION:A substrate to be heat treated is formed with a selective oxide film 2 having 600nm of thickness and a silicon oxide film 2 having 10nm of thickness on the main surface of a P-type silicon substrate 1, and with an arsenic implanted layer 4 formed by ion implanting 5X10<15>/cm<2> of arsenic at 30keV. The substrate is heat treated by setting temperature rising and cooling velocities to approx. 2 deg.C/sec at high temperature side (900-950 deg.) and to approx. 10 deg.C/sec at low temperature side (900 deg.C or less). That is, since the temperature rising and cooling velocities are so controlled as to reduce the thermal stress of the substrate, the reliability of the substrate is improved. Thus, the thermal stress is reduced, the characteristics of the substrate are improved, and a time required for a heat treating step can be shortened.
JP62199694A 1987-08-12 1987-08-12 Heat treatment apparatus and heat treatment method Expired - Lifetime JP2675011B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62199694A JP2675011B2 (en) 1987-08-12 1987-08-12 Heat treatment apparatus and heat treatment method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62199694A JP2675011B2 (en) 1987-08-12 1987-08-12 Heat treatment apparatus and heat treatment method

Publications (2)

Publication Number Publication Date
JPS6444023A true JPS6444023A (en) 1989-02-16
JP2675011B2 JP2675011B2 (en) 1997-11-12

Family

ID=16412059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62199694A Expired - Lifetime JP2675011B2 (en) 1987-08-12 1987-08-12 Heat treatment apparatus and heat treatment method

Country Status (1)

Country Link
JP (1) JP2675011B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5880503A (en) * 1996-08-07 1999-03-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device having static memory cell with CMOS structure
DE19938781A1 (en) * 1999-08-16 2001-03-01 Infineon Technologies Ag Grinding disk for conditioning of polishing surface for polishing of semiconductor structures
KR20010066153A (en) * 1999-12-31 2001-07-11 황인길 a method of rapid thermal process
US6372611B1 (en) 1997-01-24 2002-04-16 Nec Corporation Semiconductor manufacturing method including gettering of metal impurities
US9870964B1 (en) 2016-09-28 2018-01-16 Hitachi Kokusai Electric, Inc. Method of manufacturing semiconductor device by determining and selecting cooling recipe based on temperature

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4967566A (en) * 1972-11-02 1974-07-01
JPS5595330A (en) * 1979-01-12 1980-07-19 Toshiba Corp Preparation of semiconductor device
JPS57167638A (en) * 1981-03-11 1982-10-15 Fujitsu Ltd Manufacture of semiconductor device
JPS61137332A (en) * 1984-12-08 1986-06-25 Internatl Rectifier Corp Japan Ltd Manufacture of high speed semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4967566A (en) * 1972-11-02 1974-07-01
JPS5595330A (en) * 1979-01-12 1980-07-19 Toshiba Corp Preparation of semiconductor device
JPS57167638A (en) * 1981-03-11 1982-10-15 Fujitsu Ltd Manufacture of semiconductor device
JPS61137332A (en) * 1984-12-08 1986-06-25 Internatl Rectifier Corp Japan Ltd Manufacture of high speed semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5880503A (en) * 1996-08-07 1999-03-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device having static memory cell with CMOS structure
US6372611B1 (en) 1997-01-24 2002-04-16 Nec Corporation Semiconductor manufacturing method including gettering of metal impurities
DE19938781A1 (en) * 1999-08-16 2001-03-01 Infineon Technologies Ag Grinding disk for conditioning of polishing surface for polishing of semiconductor structures
DE19938781B4 (en) * 1999-08-16 2004-09-09 Infineon Technologies Ag Conditioning disc for conditioning CMP pads
KR20010066153A (en) * 1999-12-31 2001-07-11 황인길 a method of rapid thermal process
US9870964B1 (en) 2016-09-28 2018-01-16 Hitachi Kokusai Electric, Inc. Method of manufacturing semiconductor device by determining and selecting cooling recipe based on temperature

Also Published As

Publication number Publication date
JP2675011B2 (en) 1997-11-12

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