JPS5715280A - Manufacture of contiguous disk bubble element - Google Patents
Manufacture of contiguous disk bubble elementInfo
- Publication number
- JPS5715280A JPS5715280A JP8742180A JP8742180A JPS5715280A JP S5715280 A JPS5715280 A JP S5715280A JP 8742180 A JP8742180 A JP 8742180A JP 8742180 A JP8742180 A JP 8742180A JP S5715280 A JPS5715280 A JP S5715280A
- Authority
- JP
- Japan
- Prior art keywords
- film
- transfer pattern
- ion implantation
- surface layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Magnetic Films (AREA)
Abstract
PURPOSE:To obtain an element suitable to minute bubbles in a single-layer film system by reducing the axial anisotropic energy of the surface layer of a garnet film except right under a transfer pattern by thermally treating the surface layer at a specific temperature after the formation of the transfer pattern and before ion implantation. CONSTITUTION:A transfer pattern is formed on a single-layer magnetic garnet film and then before ion implantation, a heat treatment is carried out at a temperature higher than 750 deg.C to reduce the uniaxial magnetic anisotropic energy of the surface layer of the garnet film except right under the transfer pattern. For example, on a Gd3Ga5O12 substrate, a magnetic narnet film (composition; Sm0.75Lu1.75Ca0.5 Fe4.5 Ge0.5O12) having 1.39mum film thickness is formed by liquid-phase epitaxial growth and on it, a 4,000Angstrom Au film is formed to obtain a continuous disk pattern by ion milling. Then, a heat treatment is carried out for eight minutes in oxygen atmosphere at 870 deg.C and He<+> ion implantation is executed under 100KeV acceleration voltage and 3X10<15>/cm<2> does amount conditions to obtain a bubble element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8742180A JPS5715280A (en) | 1980-06-27 | 1980-06-27 | Manufacture of contiguous disk bubble element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8742180A JPS5715280A (en) | 1980-06-27 | 1980-06-27 | Manufacture of contiguous disk bubble element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5715280A true JPS5715280A (en) | 1982-01-26 |
Family
ID=13914406
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8742180A Pending JPS5715280A (en) | 1980-06-27 | 1980-06-27 | Manufacture of contiguous disk bubble element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5715280A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60152000U (en) * | 1984-03-19 | 1985-10-09 | 東光産業株式会社 | Water intrusion prevention devices such as ventilation holes |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5512790A (en) * | 1978-07-14 | 1980-01-29 | Nec Corp | Producing method of cylindrical magnetic domain element |
JPS5518095A (en) * | 1978-07-27 | 1980-02-07 | Nec Corp | Cilindrical magnetic domain element |
JPS5651817A (en) * | 1979-10-05 | 1981-05-09 | Nec Corp | Preparation of magnetic bubble element |
-
1980
- 1980-06-27 JP JP8742180A patent/JPS5715280A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5512790A (en) * | 1978-07-14 | 1980-01-29 | Nec Corp | Producing method of cylindrical magnetic domain element |
JPS5518095A (en) * | 1978-07-27 | 1980-02-07 | Nec Corp | Cilindrical magnetic domain element |
JPS5651817A (en) * | 1979-10-05 | 1981-05-09 | Nec Corp | Preparation of magnetic bubble element |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60152000U (en) * | 1984-03-19 | 1985-10-09 | 東光産業株式会社 | Water intrusion prevention devices such as ventilation holes |
JPH0352320Y2 (en) * | 1984-03-19 | 1991-11-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5787119A (en) | Manufacture of semiconductor device | |
JPS5715280A (en) | Manufacture of contiguous disk bubble element | |
JPS5715279A (en) | Manufacture of contiguous disk bubble element | |
JPS5717125A (en) | Manufacture of semiconductor device | |
JPS57186285A (en) | Manufacture of magnetic bubble memory element | |
JPS5763841A (en) | Preparation of semiconductor device | |
JPS5528518A (en) | Control method of magnetic bubble steady existence magnetic field for magnetic bubble memory element | |
JPS5754333A (en) | Semiconductor device and preparation thereof | |
JPS57106123A (en) | Manufacture of semiconductor device | |
JPS5516462A (en) | Method of forming contiguous pattern | |
JPS57133660A (en) | Controlling method for resistance value of polycrystalline semiconductor | |
JPS5518095A (en) | Cilindrical magnetic domain element | |
JPS5651817A (en) | Preparation of magnetic bubble element | |
JPS5724536A (en) | Preparation of semiconductor device | |
JPS5595313A (en) | Preparation for magnetic bubble material | |
JPS5512790A (en) | Producing method of cylindrical magnetic domain element | |
JPS57113233A (en) | Manufacture of semiconductor device | |
JPS57164516A (en) | Manufacture of magnetic bubble element | |
JPS54147777A (en) | Manufacture for semiconductor device | |
JPS5715278A (en) | Manufacture of contiguous disk bubble element | |
JPS57162467A (en) | Manufacture of semiconductor device | |
JPS5750407A (en) | Coating material for thermally treating magnetic garnet epitaxial film | |
JPS5577077A (en) | Manufacture of magnetic bubble element | |
JPS54148474A (en) | Manufacture of semiconductor device | |
JPS5736831A (en) | Manufacture of semiconductor device |