JPS51121257A - Liquid phase epitaxial growth method for compound semiconductor crysta ls - Google Patents

Liquid phase epitaxial growth method for compound semiconductor crysta ls

Info

Publication number
JPS51121257A
JPS51121257A JP4584575A JP4584575A JPS51121257A JP S51121257 A JPS51121257 A JP S51121257A JP 4584575 A JP4584575 A JP 4584575A JP 4584575 A JP4584575 A JP 4584575A JP S51121257 A JPS51121257 A JP S51121257A
Authority
JP
Japan
Prior art keywords
crysta
liquid phase
compound semiconductor
epitaxial growth
growth method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4584575A
Other languages
Japanese (ja)
Inventor
Kiyoo Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4584575A priority Critical patent/JPS51121257A/en
Publication of JPS51121257A publication Critical patent/JPS51121257A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To increase the efficiency of gun diodes by starting crystal growth during the supercooled period and making the density profile of the growth layers similar to the temperature profile.
COPYRIGHT: (C)1976,JPO&Japio
JP4584575A 1975-04-17 1975-04-17 Liquid phase epitaxial growth method for compound semiconductor crysta ls Pending JPS51121257A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4584575A JPS51121257A (en) 1975-04-17 1975-04-17 Liquid phase epitaxial growth method for compound semiconductor crysta ls

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4584575A JPS51121257A (en) 1975-04-17 1975-04-17 Liquid phase epitaxial growth method for compound semiconductor crysta ls

Publications (1)

Publication Number Publication Date
JPS51121257A true JPS51121257A (en) 1976-10-23

Family

ID=12730539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4584575A Pending JPS51121257A (en) 1975-04-17 1975-04-17 Liquid phase epitaxial growth method for compound semiconductor crysta ls

Country Status (1)

Country Link
JP (1) JPS51121257A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0733115U (en) * 1993-12-08 1995-06-20 石井 恵理子 A ring that can handle the thickness of your finger

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0733115U (en) * 1993-12-08 1995-06-20 石井 恵理子 A ring that can handle the thickness of your finger

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