JPS5671953A - Formation of semiconductor layer on insulated substrate - Google Patents

Formation of semiconductor layer on insulated substrate

Info

Publication number
JPS5671953A
JPS5671953A JP14885379A JP14885379A JPS5671953A JP S5671953 A JPS5671953 A JP S5671953A JP 14885379 A JP14885379 A JP 14885379A JP 14885379 A JP14885379 A JP 14885379A JP S5671953 A JPS5671953 A JP S5671953A
Authority
JP
Japan
Prior art keywords
layer
insulated substrate
transferability
semiconductor layer
bulk
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14885379A
Other languages
Japanese (ja)
Inventor
Yukio Omori
Hiroyuki Tango
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14885379A priority Critical patent/JPS5671953A/en
Publication of JPS5671953A publication Critical patent/JPS5671953A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To obtain an epitaxial layer not lowering in transferability by reducing to a desired value the large thickness given to the expitaxial growth of a semiconductor layer on an insulated substrate of sepphire for example with Si ion injection, heat- treatment and etching repeated several times. CONSTITUTION:The epitaxial growth of an Si layer for forming a semiconductor device such as transistor on an insulated substrate of sapphire for example is made to have a large thickness of about 3mum and the crystallinity thereof is equalized to that of bulk Si. Next Si atom ions 3 are injected at a rate of about 1X10<16>/cm<3> so as to reach a depth of 6,000Angstrom , work is heat-treated in N2 gas at 600 deg.C for 5hr, and the only the portion at about 5,000Angstrom of the ions is removed using an aqueous KOH solution. These steps of treatment are repeated to reduce the thickness of the layer 2 to a desired value 0.5mum. Thereby, the transferability of the residual layer 2 becomes about 85% of that of bulk Si, i.e. a quality grown layer 2 with a small reduction in transferability is obtained.
JP14885379A 1979-11-19 1979-11-19 Formation of semiconductor layer on insulated substrate Pending JPS5671953A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14885379A JPS5671953A (en) 1979-11-19 1979-11-19 Formation of semiconductor layer on insulated substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14885379A JPS5671953A (en) 1979-11-19 1979-11-19 Formation of semiconductor layer on insulated substrate

Publications (1)

Publication Number Publication Date
JPS5671953A true JPS5671953A (en) 1981-06-15

Family

ID=15462195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14885379A Pending JPS5671953A (en) 1979-11-19 1979-11-19 Formation of semiconductor layer on insulated substrate

Country Status (1)

Country Link
JP (1) JPS5671953A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6072219A (en) * 1983-09-28 1985-04-24 Toshiba Corp Fabrication of semiconductor single crystal thin film
EP0319247A2 (en) * 1987-11-30 1989-06-07 Pioneer Electronic Corporation Double-sided disk player

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6072219A (en) * 1983-09-28 1985-04-24 Toshiba Corp Fabrication of semiconductor single crystal thin film
EP0319247A2 (en) * 1987-11-30 1989-06-07 Pioneer Electronic Corporation Double-sided disk player

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