JPS6473714A - Formation of semiconductor thin film - Google Patents

Abstract

PURPOSE:To eliminate the hindrance of crystal growth by the presence of impurity atoms and to contrive improvement in crystallizability by a method wherein the growth of an impurity-doped single crystal silicon film by a molecular beam epitaxial method is conducted subsequent to the growth of a undoped single crystal silicon film. CONSTITUTION:A single crystal sapphire substrate, which is mirror-polished by conducting chemical and mechanical etching, is provided in the growing chamber of a molecular beam epitaxial MBE device. An electron beam is projected on the substrate 1, the surface of the substrate is cleaned, and a undoped single crystal silicon film 2 is grown on the cleaned surface by projecting a silicon molecular beam. At this time, first, a number of silicon islands are grown, the islands are linked together as their growth progresses, impurity atoms disappear, and the growth of a film 2 is facilitated. Then, after the film 2 has been made flat, an antimony molecular beam is projected together with the silicon molecular beam on the surface of the film 2 as an impurity molecular beam, and an antimony-doped single crystal silicon film 3 is formed on the film 2.