JPS6427222A - Manufacture of thin single crystalline film - Google Patents
Manufacture of thin single crystalline filmInfo
- Publication number
- JPS6427222A JPS6427222A JP9557588A JP9557588A JPS6427222A JP S6427222 A JPS6427222 A JP S6427222A JP 9557588 A JP9557588 A JP 9557588A JP 9557588 A JP9557588 A JP 9557588A JP S6427222 A JPS6427222 A JP S6427222A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- treated
- deposited
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To prevent ''a surface (111) from growing' by employing a solid epitaxial growth by forming the thickness of an amorphous semiconductor film 1-5mum. CONSTITUTION:Amorphous Si is deposited at 400 deg.C or less of substrate temperature, the thickness of the deposited film is increased 1mum or more, large intrinsic stress is introduced into the Si, then heat-treated to contract the Si, the stress is further increased, and a solid epitaxial growth is performed. That is, an SiO2 film 2 having an opening at a single crystalline Si substrate 1 of plane azimuth (100). A seed region is formed rectangular, and the direction of its side is set to a direction (100) of the substrate crystal 1. This substrate is introduced into an ultrahigh vacuum chamber, the substrate surface is cleaned, Si is deposited to form an amorphous Si film 3. Then, it is immediately heat- treated, and eventually heat-treated in N2 for drying for solid epitaxial growth. Thus, a preferably crystalline SOI structure can be formed by a solid epitaxially growing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9557588A JPS6427222A (en) | 1987-04-24 | 1988-04-20 | Manufacture of thin single crystalline film |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9974387 | 1987-04-24 | ||
| JP9557588A JPS6427222A (en) | 1987-04-24 | 1988-04-20 | Manufacture of thin single crystalline film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6427222A true JPS6427222A (en) | 1989-01-30 |
Family
ID=26436786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9557588A Pending JPS6427222A (en) | 1987-04-24 | 1988-04-20 | Manufacture of thin single crystalline film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6427222A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6413805B1 (en) | 1993-03-12 | 2002-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device forming method |
| US6730549B1 (en) | 1993-06-25 | 2004-05-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for its preparation |
| US7709862B2 (en) | 2005-08-02 | 2010-05-04 | Honda Motor Co., Ltd. | Ion implantation mask and method for manufacturing same, silicon carbide semiconductor device using ion implantation mask, and method for manufacturing same |
-
1988
- 1988-04-20 JP JP9557588A patent/JPS6427222A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6413805B1 (en) | 1993-03-12 | 2002-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device forming method |
| US6730549B1 (en) | 1993-06-25 | 2004-05-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for its preparation |
| US6756657B1 (en) | 1993-06-25 | 2004-06-29 | Semiconductor Energy Laboratory Co., Ltd. | Method of preparing a semiconductor having controlled crystal orientation |
| US7709862B2 (en) | 2005-08-02 | 2010-05-04 | Honda Motor Co., Ltd. | Ion implantation mask and method for manufacturing same, silicon carbide semiconductor device using ion implantation mask, and method for manufacturing same |
| US8105927B2 (en) | 2005-08-02 | 2012-01-31 | Honda Motor Co., Ltd. | Method for manufacturing ion implantation mask, and method for manufacturing silicon carbide semiconductor device |
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