JPS6430110A - Superconductor - Google Patents

Superconductor

Info

Publication number
JPS6430110A
JPS6430110A JP62184012A JP18401287A JPS6430110A JP S6430110 A JPS6430110 A JP S6430110A JP 62184012 A JP62184012 A JP 62184012A JP 18401287 A JP18401287 A JP 18401287A JP S6430110 A JPS6430110 A JP S6430110A
Authority
JP
Japan
Prior art keywords
substrate
gan
layer
superconductive
crack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62184012A
Other languages
Japanese (ja)
Inventor
Masaaki Oshima
Nobuyasu Hase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62184012A priority Critical patent/JPS6430110A/en
Publication of JPS6430110A publication Critical patent/JPS6430110A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
    • Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)

Abstract

PURPOSE:To make it possible to grow up a superconductive membrane with no crack by growing up a compound of GaN or AlN on a saphier substrate as a buffer layer. CONSTITUTION:On a siphier C axis substrate 1, GaN crystals 3 are grown up in a gaseous phase breeding in which NH3 and H2 are reacted with Ga metal. Then, on the resultant substrate 1, a superconductive material layer 2 is formed in a beam vacuum evaporation method. In this case, the GaN breeding layer 3 grows as single crystals on the substrate 1, and it has extremely numerous empty grid points of N, being flexible to a grid distortion. Consequently, when a superconductor layer is formed thereover, no crack is produced, and a stable superconductive membrane is obtained even through an annealing and cooling processes are applied.
JP62184012A 1987-07-23 1987-07-23 Superconductor Pending JPS6430110A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62184012A JPS6430110A (en) 1987-07-23 1987-07-23 Superconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62184012A JPS6430110A (en) 1987-07-23 1987-07-23 Superconductor

Publications (1)

Publication Number Publication Date
JPS6430110A true JPS6430110A (en) 1989-02-01

Family

ID=16145788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62184012A Pending JPS6430110A (en) 1987-07-23 1987-07-23 Superconductor

Country Status (1)

Country Link
JP (1) JPS6430110A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5290393A (en) * 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
US5725674A (en) * 1991-03-18 1998-03-10 Trustees Of Boston University Device and method for epitaxially growing gallium nitride layers
MD174Z (en) * 2009-05-19 2010-10-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Semiconducting material
MD323Z (en) * 2009-12-29 2011-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Thermoelectric microwire in glass insulation

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5290393A (en) * 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
US5725674A (en) * 1991-03-18 1998-03-10 Trustees Of Boston University Device and method for epitaxially growing gallium nitride layers
MD174Z (en) * 2009-05-19 2010-10-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Semiconducting material
MD323Z (en) * 2009-12-29 2011-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Thermoelectric microwire in glass insulation

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