MD174Z - Semiconducting material - Google Patents

Semiconducting material Download PDF

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Publication number
MD174Z
MD174Z MDS20090092A MDS20090092A MD174Z MD 174 Z MD174 Z MD 174Z MD S20090092 A MDS20090092 A MD S20090092A MD S20090092 A MDS20090092 A MD S20090092A MD 174 Z MD174 Z MD 174Z
Authority
MD
Moldova
Prior art keywords
semiconducting material
tin telluride
semiconducting
doped
tellurium
Prior art date
Application number
MDS20090092A
Other languages
Romanian (ro)
Russian (ru)
Inventor
Ефим ЗАСАВИЦКИЙ
Константин АНДРОНИК
Валериу КАНЦЕР
Анатолие СИДОРЕНКО
Original Assignee
Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы filed Critical Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы
Priority to MDS20090092A priority Critical patent/MD174Z/en
Publication of MD174Y publication Critical patent/MD174Y/en
Publication of MD174Z publication Critical patent/MD174Z/en

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

The invention relates to the semiconducting materials possessing semiconductor properties, particularly to a semiconducting material of doped tin telluride.The material, according to the invention, is made on base of tin telluride, tellurium and is additionally doped with gallium, and the components are taken in the following ratio, mass %:
MDS20090092A 2009-05-19 2009-05-19 Semiconducting material MD174Z (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDS20090092A MD174Z (en) 2009-05-19 2009-05-19 Semiconducting material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDS20090092A MD174Z (en) 2009-05-19 2009-05-19 Semiconducting material

Publications (2)

Publication Number Publication Date
MD174Y MD174Y (en) 2010-03-31
MD174Z true MD174Z (en) 2010-10-31

Family

ID=43568946

Family Applications (1)

Application Number Title Priority Date Filing Date
MDS20090092A MD174Z (en) 2009-05-19 2009-05-19 Semiconducting material

Country Status (1)

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MD (1) MD174Z (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD323Z (en) * 2009-12-29 2011-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Thermoelectric microwire in glass insulation

Citations (33)

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GB1360100A (en) * 1970-12-31 1974-07-17 Ibm Superconductive tunnelling device
JPS5349963A (en) * 1976-10-18 1978-05-06 Nippon Telegr & Teleph Corp <Ntt> Super-current tunneling element
JPS5390882A (en) * 1977-01-21 1978-08-10 Nippon Telegr & Teleph Corp <Ntt> Supercurrent tunneling element
JPS5613784A (en) * 1979-07-13 1981-02-10 Nippon Telegr & Teleph Corp <Ntt> Preparation of semiconductor barrier josephson junction element
JPS57104283A (en) * 1980-12-20 1982-06-29 Rikagaku Kenkyusho Josephson junction element and manufacture thereof
JPS57176780A (en) * 1981-04-22 1982-10-30 Toshiba Corp P-n junction superconductive element
SU961512A1 (en) * 1980-12-26 1983-01-23 Ленинградский Ордена Ленина Политехнический Институт Им.М.И.Калинина Superconductor semiconductor material
JPS58110084A (en) * 1981-12-24 1983-06-30 Mitsubishi Electric Corp Josephson element
JPS58125881A (en) * 1982-01-22 1983-07-27 Hitachi Ltd Constitution of vertical type resistance circuit
JPS58191427A (en) * 1982-04-30 1983-11-08 Sharp Corp Impurity addition method
US4470190A (en) * 1982-11-29 1984-09-11 At&T Bell Laboratories Josephson device fabrication method
JPS6167282A (en) * 1984-09-08 1986-04-07 Nippon Telegr & Teleph Corp <Ntt> Resistance element for superconductor integrated circuit and manufacture thereof
JPS61181178A (en) * 1985-02-06 1986-08-13 Rikagaku Kenkyusho Josephson junction element and manufacture thereof
JPS6218776A (en) * 1985-07-17 1987-01-27 Fujitsu Ltd Superconductive device
JPS6298769A (en) * 1985-10-25 1987-05-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor element
JPS63160273A (en) * 1986-12-23 1988-07-04 Fujitsu Ltd High-speed semiconductor device
JPS6430110A (en) * 1987-07-23 1989-02-01 Matsushita Electric Industrial Co Ltd Superconductor
JPS6452322A (en) * 1987-08-21 1989-02-28 Matsushita Electric Industrial Co Ltd Superconductor
JPS6452321A (en) * 1987-08-21 1989-02-28 Matsushita Electric Industrial Co Ltd Superconductor
JPS6452319A (en) * 1987-08-21 1989-02-28 Matsushita Electric Industrial Co Ltd Superconductor and integrated superconductive device
JPS6452325A (en) * 1987-08-21 1989-02-28 Matsushita Electric Industrial Co Ltd Superconductor
JPH0199269A (en) * 1987-10-13 1989-04-18 Nippon Telegr & Teleph Corp <Ntt> Oxide superconductor tunnel junction and forming method thereof
JPH02277275A (en) * 1989-04-19 1990-11-13 Hitachi Ltd Electron carrier infinite layered oxide superconductor and Josephson junction
BG48908A1 (en) * 1989-08-07 1991-06-14 Vissh Khim T I Superconducting ceramic material
JPH05121731A (en) * 1991-10-26 1993-05-18 Rohm Co Ltd Semiconductor element having ferroelectric layer
JPH07273379A (en) * 1994-04-01 1995-10-20 Kokusai Chodendo Sangyo Gijutsu Kenkyu Center Method for manufacturing oxide superconductor junction element
JPH0918063A (en) * 1995-06-28 1997-01-17 Matsushita Electric Ind Co Ltd Oxide superconductor quantum interference device
RU2111579C1 (en) * 1996-09-03 1998-05-20 Адиль Маликович Яфясов Process of manufacture of quantum interference element
US5877122A (en) * 1995-05-19 1999-03-02 Fujitsu Ltd. Josephson element having a NdBa2 Cu3 O7-y superconductor thin-film wiring pattern
MD2436G2 (en) * 2003-03-18 2004-10-31 Государственный Университет Молд0 Composition for obtaining thin films of stannic oxide with high sensibility to carbonic oxide
MD2805G2 (en) * 2004-03-26 2006-02-28 Государственный Университет Молд0 Composition for obtaining thin stannic oxide films
MD3662C2 (en) * 2005-09-02 2009-02-28 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Semiconductor thermoelectric alloy (variants)
MD3688C2 (en) * 2007-03-14 2009-03-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Semiconductor strain-sensing resistor
  • 2009

Patent Citations (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1360100A (en) * 1970-12-31 1974-07-17 Ibm Superconductive tunnelling device
JPS5349963A (en) * 1976-10-18 1978-05-06 Nippon Telegr & Teleph Corp <Ntt> Super-current tunneling element
JPS5390882A (en) * 1977-01-21 1978-08-10 Nippon Telegr & Teleph Corp <Ntt> Supercurrent tunneling element
JPS5613784A (en) * 1979-07-13 1981-02-10 Nippon Telegr & Teleph Corp <Ntt> Preparation of semiconductor barrier josephson junction element
JPS57104283A (en) * 1980-12-20 1982-06-29 Rikagaku Kenkyusho Josephson junction element and manufacture thereof
SU961512A1 (en) * 1980-12-26 1983-01-23 Ленинградский Ордена Ленина Политехнический Институт Им.М.И.Калинина Superconductor semiconductor material
JPS57176780A (en) * 1981-04-22 1982-10-30 Toshiba Corp P-n junction superconductive element
JPS58110084A (en) * 1981-12-24 1983-06-30 Mitsubishi Electric Corp Josephson element
JPS58125881A (en) * 1982-01-22 1983-07-27 Hitachi Ltd Constitution of vertical type resistance circuit
JPS58191427A (en) * 1982-04-30 1983-11-08 Sharp Corp Impurity addition method
US4470190A (en) * 1982-11-29 1984-09-11 At&T Bell Laboratories Josephson device fabrication method
JPS6167282A (en) * 1984-09-08 1986-04-07 Nippon Telegr & Teleph Corp <Ntt> Resistance element for superconductor integrated circuit and manufacture thereof
JPS61181178A (en) * 1985-02-06 1986-08-13 Rikagaku Kenkyusho Josephson junction element and manufacture thereof
JPS6218776A (en) * 1985-07-17 1987-01-27 Fujitsu Ltd Superconductive device
JPS6298769A (en) * 1985-10-25 1987-05-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor element
JPS63160273A (en) * 1986-12-23 1988-07-04 Fujitsu Ltd High-speed semiconductor device
JPS6430110A (en) * 1987-07-23 1989-02-01 Matsushita Electric Industrial Co Ltd Superconductor
JPS6452322A (en) * 1987-08-21 1989-02-28 Matsushita Electric Industrial Co Ltd Superconductor
JPS6452321A (en) * 1987-08-21 1989-02-28 Matsushita Electric Industrial Co Ltd Superconductor
JPS6452319A (en) * 1987-08-21 1989-02-28 Matsushita Electric Industrial Co Ltd Superconductor and integrated superconductive device
JPS6452325A (en) * 1987-08-21 1989-02-28 Matsushita Electric Industrial Co Ltd Superconductor
JPH0199269A (en) * 1987-10-13 1989-04-18 Nippon Telegr & Teleph Corp <Ntt> Oxide superconductor tunnel junction and forming method thereof
JPH02277275A (en) * 1989-04-19 1990-11-13 Hitachi Ltd Electron carrier infinite layered oxide superconductor and Josephson junction
BG48908A1 (en) * 1989-08-07 1991-06-14 Vissh Khim T I Superconducting ceramic material
JPH05121731A (en) * 1991-10-26 1993-05-18 Rohm Co Ltd Semiconductor element having ferroelectric layer
JPH07273379A (en) * 1994-04-01 1995-10-20 Kokusai Chodendo Sangyo Gijutsu Kenkyu Center Method for manufacturing oxide superconductor junction element
US5877122A (en) * 1995-05-19 1999-03-02 Fujitsu Ltd. Josephson element having a NdBa2 Cu3 O7-y superconductor thin-film wiring pattern
JPH0918063A (en) * 1995-06-28 1997-01-17 Matsushita Electric Ind Co Ltd Oxide superconductor quantum interference device
RU2111579C1 (en) * 1996-09-03 1998-05-20 Адиль Маликович Яфясов Process of manufacture of quantum interference element
MD2436G2 (en) * 2003-03-18 2004-10-31 Государственный Университет Молд0 Composition for obtaining thin films of stannic oxide with high sensibility to carbonic oxide
MD2805G2 (en) * 2004-03-26 2006-02-28 Государственный Университет Молд0 Composition for obtaining thin stannic oxide films
MD3662C2 (en) * 2005-09-02 2009-02-28 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Semiconductor thermoelectric alloy (variants)
MD3688C2 (en) * 2007-03-14 2009-03-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Semiconductor strain-sensing resistor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Коэн М., Глэдстоун Г., Йенсен М., Шриффер Дж. Сверхпроводимость полупроводников и переходных металлов. гл. 3, Москва, Мир, 1972. *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD323Z (en) * 2009-12-29 2011-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Thermoelectric microwire in glass insulation

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Publication number Publication date
MD174Y (en) 2010-03-31

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KA4Y Short-term patent lapsed due to non-payment of fees (with right of restoration)