GB1360100A - Superconductive tunnelling device - Google Patents
Superconductive tunnelling deviceInfo
- Publication number
- GB1360100A GB1360100A GB4601471A GB4601471A GB1360100A GB 1360100 A GB1360100 A GB 1360100A GB 4601471 A GB4601471 A GB 4601471A GB 4601471 A GB4601471 A GB 4601471A GB 1360100 A GB1360100 A GB 1360100A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- layers
- barrier
- electrode
- tunnelling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
1360100 Superconductor devices INTERNATIONAL BUSINESS MACHINES CORP 4 Oct 1971 [31 Dec 1970] 46014/71 Heading H1K In a superconductor tunnelling (Josephson) device one of the electrodes contains an intermetallic compound. The compound is formed as a thin layer at the interface of two layers of its components one of which may be a superconductor, and inhibits hillock formation at the barrier. In a first arrangement a layer of Pb is deposited on a layer of Au so that a thin layer of intermetallic compound is formed therebetween. The Pb layer is plasma or thermally oxidized to form a tunnelling barrier and a second electrode comprising Pb or consecutive layers of Pb and Au is deposited on top of the barrier layer. Alternatively both electrodes may comprise consecutive Pb-Au-Pb layers or the first electrode may have this structure whilst the second electrode comprises a layer of Pb covered with Au. In a further arrangement two layers of intermetallic compound are provided in the first electrode by depositing layers in the sequence Au-Pb-Au-Pb and the upper electrode comprises a Pb-Au-Pb structure. The device may comprise a tunnelling cryotron formed on a substrate of silica glass, cork, mica or an oxidized ground plane. The tunnelling barrier may be of silicon oxide or lead oxide or in general oxides, sulphides or nitrides or may be a vacuum. The compound may comprise Pb with one of Au, Pd, Pt, Mg, Te and Tl, or In with one Cu, Ag, Au, Sn, Mg, Ni, and Bi. The metal layers may be deposited by vacuum evaporation or sputtering and different materials may be used in the first and second electrodes. The intermetallic compound and the remainder of the layer of compound forming material may be disposed between the superconductor electrode material and the barrier.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10308870A | 1970-12-31 | 1970-12-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1360100A true GB1360100A (en) | 1974-07-17 |
Family
ID=22293330
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4601471A Expired GB1360100A (en) | 1970-12-31 | 1971-10-04 | Superconductive tunnelling device |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5131156B1 (en) |
CA (1) | CA936968A (en) |
DE (1) | DE2164684C3 (en) |
FR (1) | FR2120781A5 (en) |
GB (1) | GB1360100A (en) |
IT (1) | IT951948B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD174Z (en) * | 2009-05-19 | 2010-10-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Semiconducting material |
MD323Z (en) * | 2009-12-29 | 2011-08-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Thermoelectric microwire in glass insulation |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3848259A (en) * | 1973-10-30 | 1974-11-12 | Ibm | Multicontrol logic gate design |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1178608B (en) * | 1959-05-20 | 1964-09-24 | Ibm | Use of an indium alloy for electrical circuit arrangements in which the conductivity of a superconductor can be reversed, and a method for their production |
-
1971
- 1971-10-04 GB GB4601471A patent/GB1360100A/en not_active Expired
- 1971-11-26 JP JP46094564A patent/JPS5131156B1/ja active Pending
- 1971-12-09 FR FR7144969A patent/FR2120781A5/fr not_active Expired
- 1971-12-16 IT IT32467/71A patent/IT951948B/en active
- 1971-12-23 CA CA130916A patent/CA936968A/en not_active Expired
- 1971-12-27 DE DE2164684A patent/DE2164684C3/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD174Z (en) * | 2009-05-19 | 2010-10-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Semiconducting material |
MD323Z (en) * | 2009-12-29 | 2011-08-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Thermoelectric microwire in glass insulation |
Also Published As
Publication number | Publication date |
---|---|
CA936968A (en) | 1973-11-13 |
FR2120781A5 (en) | 1972-08-18 |
JPS5131156B1 (en) | 1976-09-04 |
DE2164684A1 (en) | 1972-07-27 |
DE2164684C3 (en) | 1981-09-03 |
JPS4713272A (en) | 1972-07-06 |
IT951948B (en) | 1973-07-10 |
DE2164684B2 (en) | 1981-01-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |