MD323Z - Thermoelectric microwire in glass insulation - Google Patents

Thermoelectric microwire in glass insulation

Info

Publication number
MD323Z
MD323Z MDS20090236A MDS20090236A MD323Z MD 323 Z MD323 Z MD 323Z MD S20090236 A MDS20090236 A MD S20090236A MD S20090236 A MDS20090236 A MD S20090236A MD 323 Z MD323 Z MD 323Z
Authority
MD
Moldova
Prior art keywords
microwire
thermoelectric
glass insulation
obtaining
electromotive force
Prior art date
Application number
MDS20090236A
Other languages
Romanian (ro)
Russian (ru)
Inventor
Павел БОДЮЛ
Альбина НИКОЛАЕВА
Леонид КОНОПКО
Оксана БОТНАРЬ
Original Assignee
Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы filed Critical Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы
Priority to MDS20090236A priority Critical patent/MD323Z/en
Publication of MD323Y publication Critical patent/MD323Y/en
Publication of MD323Z publication Critical patent/MD323Z/en

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Abstract

The invention relates to the technology for obtaining microwires in glass insulation with a stable coefficient of electromotive force.The thermoelectric microwire in glass insulation of Bi1-xSbx doped with Te, where x = 0.10…0.15. The concentration of Te is 0.002% at.The result of the invention consists in obtaining a microwire with a stable coefficient of electromotive force, in a temperature range of 100…150 K.
MDS20090236A 2009-12-29 2009-12-29 Thermoelectric microwire in glass insulation MD323Z (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDS20090236A MD323Z (en) 2009-12-29 2009-12-29 Thermoelectric microwire in glass insulation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDS20090236A MD323Z (en) 2009-12-29 2009-12-29 Thermoelectric microwire in glass insulation

Publications (2)

Publication Number Publication Date
MD323Y MD323Y (en) 2011-01-31
MD323Z true MD323Z (en) 2011-08-31

Family

ID=45814988

Family Applications (1)

Application Number Title Priority Date Filing Date
MDS20090236A MD323Z (en) 2009-12-29 2009-12-29 Thermoelectric microwire in glass insulation

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MD (1) MD323Z (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD542Z (en) * 2012-01-13 2013-03-31 ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ Thermoelectric anisotropic material on base of bismuth
MD575Z (en) * 2012-01-31 2013-07-31 ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ Method for recrystallization of bismuth filament in glass insulation

Citations (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU186733A1 (en) * Э. А. Альфтан, С. В. нова, А. М. Фирсов, С. А. Микла Л. Г. Афонина , М. М. Медников
GB1360100A (en) * 1970-12-31 1974-07-17 Ibm Superconductive tunnelling device
JPS5349963A (en) * 1976-10-18 1978-05-06 Nippon Telegr & Teleph Corp <Ntt> Super-current tunneling element
JPS5390882A (en) * 1977-01-21 1978-08-10 Nippon Telegr & Teleph Corp <Ntt> Supercurrent tunneling element
JPS5613784A (en) * 1979-07-13 1981-02-10 Nippon Telegr & Teleph Corp <Ntt> Preparation of semiconductor barrier josephson junction element
JPS57104283A (en) * 1980-12-20 1982-06-29 Rikagaku Kenkyusho Josephson junction element and manufacture thereof
JPS57176780A (en) * 1981-04-22 1982-10-30 Toshiba Corp P-n junction superconductive element
SU961512A1 (en) * 1980-12-26 1983-01-23 Ленинградский Ордена Ленина Политехнический Институт Им.М.И.Калинина Superconductor semiconductor material
JPS58110084A (en) * 1981-12-24 1983-06-30 Mitsubishi Electric Corp Josephson element
JPS58125881A (en) * 1982-01-22 1983-07-27 Hitachi Ltd Constitution of vertical type resistance circuit
JPS58191427A (en) * 1982-04-30 1983-11-08 Sharp Corp Impurity doping method
US4470190A (en) * 1982-11-29 1984-09-11 At&T Bell Laboratories Josephson device fabrication method
US4484018A (en) * 1983-01-20 1984-11-20 Pneumo Corporation Coaxial thermocouple wire
JPS6167282A (en) * 1984-09-08 1986-04-07 Nippon Telegr & Teleph Corp <Ntt> Resistance element for superconductor integrated circuit and manufacture thereof
JPS61181178A (en) * 1985-02-06 1986-08-13 Rikagaku Kenkyusho Josephson junction element and manufacture thereof
JPS6218776A (en) * 1985-07-17 1987-01-27 Fujitsu Ltd Superconductive device
JPS6298769A (en) * 1985-10-25 1987-05-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor element
JPS63160273A (en) * 1986-12-23 1988-07-04 Fujitsu Ltd High-speed semiconductor device
JPS6430110A (en) * 1987-07-23 1989-02-01 Matsushita Electric Ind Co Ltd Superconductor
JPS6452325A (en) * 1987-08-21 1989-02-28 Matsushita Electric Ind Co Ltd Superconductor
JPS6452322A (en) * 1987-08-21 1989-02-28 Matsushita Electric Ind Co Ltd Superconductor
JPS6452319A (en) * 1987-08-21 1989-02-28 Matsushita Electric Ind Co Ltd Superconductor and integrated superconductive device
JPS6452321A (en) * 1987-08-21 1989-02-28 Matsushita Electric Ind Co Ltd Superconductor
JPH0199269A (en) * 1987-10-13 1989-04-18 Nippon Telegr & Teleph Corp <Ntt> Oxide superconductor tunnel junction and forming method thereof
JPH02277275A (en) * 1989-04-19 1990-11-13 Hitachi Ltd Electron carrier infinit layer structure oxide superconductor and josephson junction
BG48908A1 (en) * 1989-08-07 1991-06-14 Vissh Khim T I Superconducting ceramic material
BG50742A1 (en) * 1990-11-21 1992-11-16 Julijan M Kirilov Thermoelectrode
JPH05121731A (en) * 1991-10-26 1993-05-18 Rohm Co Ltd Semiconductor element having ferroelectric layer
JPH07273379A (en) * 1994-04-01 1995-10-20 Kokusai Chodendo Sangyo Gijutsu Kenkyu Center Manufacture of oxide superconductor junction device
JPH0918063A (en) * 1995-06-28 1997-01-17 Matsushita Electric Ind Co Ltd Oxide superconductor quantum interference device
RU2083732C1 (en) * 1994-04-19 1997-07-10 Акционерное общество закрытого типа "БИМКОМ" Method for growing microhomogeneous crystals based on bismuth telluride
MD855B1 (en) * 1996-10-25 1997-09-30 Inst Cercetari Stiintifice Cast microwire process
RU2111579C1 (en) * 1996-09-03 1998-05-20 Адиль Маликович Яфясов Process of manufacture of quantum interference element
US5877122A (en) * 1995-05-19 1999-03-02 Fujitsu Ltd. Josephson element having a NdBa2 Cu3 O7-y superconductor thin-film wiring pattern
EP0923438A1 (en) * 1996-08-27 1999-06-23 Commissariat A L'energie Atomique Method for obtaining a wafer in semiconducting material of large dimensions and use of the resulting wafer for producing substrates of the semiconductor on insulator type
EP0980098A1 (en) * 1998-08-11 2000-02-16 STMicroelectronics S.r.l. Semiconducting material substrate for use in integrated circuits manufacturing processes and production method thereof
EP1021838A1 (en) * 1997-09-26 2000-07-26 Wolfgang Dipl.-Ing. Priesemuth Method and device for producing a wafer from a semiconducting material
MD1546F2 (en) * 1997-05-12 2000-09-30 Lab Internat De Supraconductib Process for obtaining of a metallic microwire into the glass insulation
MD1564G2 (en) * 1999-12-07 2001-05-31 Uzina De Pompe Submersibile "Hidropompa", S.A. Process for filling the stator of the electric machine
EP1215736A2 (en) * 2000-11-30 2002-06-19 Yamaha Corporation Thermoelectric material and process for producing it
MD2220C2 (en) * 2000-09-28 2004-01-31 Валериу МИРОН Heterojunction sensor of toxic gases
RU2231688C2 (en) * 2000-03-31 2004-06-27 Авдеев Леонид Алексеевич Thermocouple
MD2510F1 (en) * 2003-02-18 2004-07-31 Anatolii Matusovici Ioiser Nanostructure and process for manufacture thereof
MD2436G2 (en) * 2003-03-18 2004-10-31 Государственный Университет Молд0 Composition for obtaining thin films of stannic oxide with high sensibility to carbonic oxide
MD2752C2 (en) * 2002-03-06 2005-12-31 Международная Лаборатория Сверхпроводимости И Электроники Твёрдого Тела Академии Наук Республики Молдова Process for coaxial microwire obtaining
MD2781C2 (en) * 2001-06-13 2006-02-28 Международная Лаборатория Сверхпроводимости Высоких Температур И Электроники Твёрдого Тела Академии Наук Республики Молдова Process for increasing the thermocouple thermoelectric coefficient
MD2805G2 (en) * 2004-03-26 2006-02-28 Государственный Университет Молд0 Composition for obtaining thin stannic oxide films
MD20050258A (en) * 2005-09-08 2007-04-30 Технический университет Молдовы Process for electromagnetic field frequency selection for metal fusing in suspension state at the manufacture of insulation wire
MD20050370A (en) * 2005-12-12 2007-08-31 Технический университет Молдовы Plant for casting conducting threads from metals in liquid phase
MD20050257A (en) * 2005-09-08 2007-08-31 Технический университет Молдовы Process for insulated wire manufacturing
MD3579B1 (en) * 2006-05-02 2008-04-30 Institutul De Inginerie Electronica Si Tehnologiiindustriale Al Academiei De Stiinte A Moldovei Process for obtaining bismuth semimetallic microwire in molybdenum glass insulation
EP1928035A1 (en) * 2005-09-22 2008-06-04 Ube Industries, Ltd. Thermo-electric converting material and process for producing the same
RU2326466C2 (en) * 2003-05-08 2008-06-10 Исикавадзима-Харима Хэви Индастриз Ко., Лтд. Thermoelectric semiconducting material, thermoelectric semiconducting element with application of thermoelectric semiconducting material, thermoelectric module with application of thermoelectric semiconducting element and method of their manufacturing
EP1930960A1 (en) * 2006-12-04 2008-06-11 Aarhus Universitet Use of thermoelectric materials for low temperature thermoelectric purposes
MD3693F1 (en) * 2007-04-28 2008-08-31 Institutul De Inginerie Electronica Si Tehnologiiindustriale Al Academiei De Stiinte A Moldovei Thermoelectrode for thermoelectric converter
MD3692F1 (en) * 2007-04-28 2008-08-31 Institutul De Inginerie Electronica Si Tehnologiiindustriale Al Academiei De Stiinte A Moldovei Thermoelectrode for thermoelectric converter
MD3580G2 (en) * 2007-07-25 2008-11-30 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Thermoelectrode for thermoelectric converter
MD3662C2 (en) * 2005-09-02 2009-02-28 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Semiconductor thermoelectric alloy (variants)
MD3691C2 (en) * 2007-05-10 2009-03-31 Акционерное Общество Научно-Исследовательский Институт "Eliri" Process for manufacturing a filiform nanostructure
MD3688C2 (en) * 2007-03-14 2009-03-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Semiconductor strain-sensing resistor
MD3920C2 (en) * 2006-12-04 2009-12-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Process for increasing the efficiency of the thermoelectric cell
RU2008129392A (en) * 2008-07-18 2010-01-27 Общество с ограниченной ответственностью Научно-производственное объединение "Кристалл" (RU) CRYSTAL PLATE, RECTANGULAR BAR, COMPONENT FOR THE PRODUCTION OF THERMOELECTRIC MODULES AND METHOD FOR PRODUCING CRYSTAL PLATE
MD4002C2 (en) * 2008-03-19 2010-07-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Apparatus for measuring the intensity of the magnetic field
MD280Y (en) * 2009-12-22 2010-09-30 Institutul De Inginerie Electronica Si Tehnologii Industriale Al Academiei De Stiinte A Moldovei Process for manufacture of Te microwire in glass insulation
MD174Z (en) * 2009-05-19 2010-10-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Semiconducting material

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2157020C2 (en) * 1998-11-27 2000-09-27 Московский государственный институт стали и сплавов (технологический университет) METHOD FOR PRODUCING THERMOELECTRIC MATERIALS ON THE BASIS OF Bi2(TeSe) 3 HAVING ELECTRON CONDUCTIVITY TYPE
RU2172540C2 (en) * 1999-08-30 2001-08-20 Белов Юрий Максимович Semiconductor item
  • 2009

Patent Citations (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU186733A1 (en) * Э. А. Альфтан, С. В. нова, А. М. Фирсов, С. А. Микла Л. Г. Афонина , М. М. Медников
GB1360100A (en) * 1970-12-31 1974-07-17 Ibm Superconductive tunnelling device
JPS5349963A (en) * 1976-10-18 1978-05-06 Nippon Telegr & Teleph Corp <Ntt> Super-current tunneling element
JPS5390882A (en) * 1977-01-21 1978-08-10 Nippon Telegr & Teleph Corp <Ntt> Supercurrent tunneling element
JPS5613784A (en) * 1979-07-13 1981-02-10 Nippon Telegr & Teleph Corp <Ntt> Preparation of semiconductor barrier josephson junction element
JPS57104283A (en) * 1980-12-20 1982-06-29 Rikagaku Kenkyusho Josephson junction element and manufacture thereof
SU961512A1 (en) * 1980-12-26 1983-01-23 Ленинградский Ордена Ленина Политехнический Институт Им.М.И.Калинина Superconductor semiconductor material
JPS57176780A (en) * 1981-04-22 1982-10-30 Toshiba Corp P-n junction superconductive element
JPS58110084A (en) * 1981-12-24 1983-06-30 Mitsubishi Electric Corp Josephson element
JPS58125881A (en) * 1982-01-22 1983-07-27 Hitachi Ltd Constitution of vertical type resistance circuit
JPS58191427A (en) * 1982-04-30 1983-11-08 Sharp Corp Impurity doping method
US4470190A (en) * 1982-11-29 1984-09-11 At&T Bell Laboratories Josephson device fabrication method
US4484018A (en) * 1983-01-20 1984-11-20 Pneumo Corporation Coaxial thermocouple wire
JPS6167282A (en) * 1984-09-08 1986-04-07 Nippon Telegr & Teleph Corp <Ntt> Resistance element for superconductor integrated circuit and manufacture thereof
JPS61181178A (en) * 1985-02-06 1986-08-13 Rikagaku Kenkyusho Josephson junction element and manufacture thereof
JPS6218776A (en) * 1985-07-17 1987-01-27 Fujitsu Ltd Superconductive device
JPS6298769A (en) * 1985-10-25 1987-05-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor element
JPS63160273A (en) * 1986-12-23 1988-07-04 Fujitsu Ltd High-speed semiconductor device
JPS6430110A (en) * 1987-07-23 1989-02-01 Matsushita Electric Ind Co Ltd Superconductor
JPS6452325A (en) * 1987-08-21 1989-02-28 Matsushita Electric Ind Co Ltd Superconductor
JPS6452322A (en) * 1987-08-21 1989-02-28 Matsushita Electric Ind Co Ltd Superconductor
JPS6452319A (en) * 1987-08-21 1989-02-28 Matsushita Electric Ind Co Ltd Superconductor and integrated superconductive device
JPS6452321A (en) * 1987-08-21 1989-02-28 Matsushita Electric Ind Co Ltd Superconductor
JPH0199269A (en) * 1987-10-13 1989-04-18 Nippon Telegr & Teleph Corp <Ntt> Oxide superconductor tunnel junction and forming method thereof
JPH02277275A (en) * 1989-04-19 1990-11-13 Hitachi Ltd Electron carrier infinit layer structure oxide superconductor and josephson junction
BG48908A1 (en) * 1989-08-07 1991-06-14 Vissh Khim T I Superconducting ceramic material
BG50742A1 (en) * 1990-11-21 1992-11-16 Julijan M Kirilov Thermoelectrode
JPH05121731A (en) * 1991-10-26 1993-05-18 Rohm Co Ltd Semiconductor element having ferroelectric layer
RU93055713A (en) * 1993-12-14 1996-06-10 И.Н. Говор THERMOELECTRIC ELEMENT
JPH07273379A (en) * 1994-04-01 1995-10-20 Kokusai Chodendo Sangyo Gijutsu Kenkyu Center Manufacture of oxide superconductor junction device
RU2083732C1 (en) * 1994-04-19 1997-07-10 Акционерное общество закрытого типа "БИМКОМ" Method for growing microhomogeneous crystals based on bismuth telluride
US5877122A (en) * 1995-05-19 1999-03-02 Fujitsu Ltd. Josephson element having a NdBa2 Cu3 O7-y superconductor thin-film wiring pattern
JPH0918063A (en) * 1995-06-28 1997-01-17 Matsushita Electric Ind Co Ltd Oxide superconductor quantum interference device
EP0923438A1 (en) * 1996-08-27 1999-06-23 Commissariat A L'energie Atomique Method for obtaining a wafer in semiconducting material of large dimensions and use of the resulting wafer for producing substrates of the semiconductor on insulator type
RU2111579C1 (en) * 1996-09-03 1998-05-20 Адиль Маликович Яфясов Process of manufacture of quantum interference element
MD855B1 (en) * 1996-10-25 1997-09-30 Inst Cercetari Stiintifice Cast microwire process
MD1546F2 (en) * 1997-05-12 2000-09-30 Lab Internat De Supraconductib Process for obtaining of a metallic microwire into the glass insulation
EP1021838A1 (en) * 1997-09-26 2000-07-26 Wolfgang Dipl.-Ing. Priesemuth Method and device for producing a wafer from a semiconducting material
EP0980098A1 (en) * 1998-08-11 2000-02-16 STMicroelectronics S.r.l. Semiconducting material substrate for use in integrated circuits manufacturing processes and production method thereof
RU98121600A (en) * 1998-11-27 2000-08-27 Институт химических проблем микроэлектроники METHOD FOR PRODUCING THERMOELECTRIC MATERIALS BASED ON BI2 (TESE) 3 SOLID SOLUTIONS (ELECTRONIC CONDUCTIVITY TYPE)
RU99118380A (en) * 1999-08-30 2001-07-10 Юрий Максимович Белов SEMICONDUCTOR PRODUCT
MD1564G2 (en) * 1999-12-07 2001-05-31 Uzina De Pompe Submersibile "Hidropompa", S.A. Process for filling the stator of the electric machine
RU2231688C2 (en) * 2000-03-31 2004-06-27 Авдеев Леонид Алексеевич Thermocouple
MD2220C2 (en) * 2000-09-28 2004-01-31 Валериу МИРОН Heterojunction sensor of toxic gases
EP1215736A2 (en) * 2000-11-30 2002-06-19 Yamaha Corporation Thermoelectric material and process for producing it
MD2781C2 (en) * 2001-06-13 2006-02-28 Международная Лаборатория Сверхпроводимости Высоких Температур И Электроники Твёрдого Тела Академии Наук Республики Молдова Process for increasing the thermocouple thermoelectric coefficient
MD2752C2 (en) * 2002-03-06 2005-12-31 Международная Лаборатория Сверхпроводимости И Электроники Твёрдого Тела Академии Наук Республики Молдова Process for coaxial microwire obtaining
MD2510F1 (en) * 2003-02-18 2004-07-31 Anatolii Matusovici Ioiser Nanostructure and process for manufacture thereof
MD2436G2 (en) * 2003-03-18 2004-10-31 Государственный Университет Молд0 Composition for obtaining thin films of stannic oxide with high sensibility to carbonic oxide
RU2326466C2 (en) * 2003-05-08 2008-06-10 Исикавадзима-Харима Хэви Индастриз Ко., Лтд. Thermoelectric semiconducting material, thermoelectric semiconducting element with application of thermoelectric semiconducting material, thermoelectric module with application of thermoelectric semiconducting element and method of their manufacturing
MD2805G2 (en) * 2004-03-26 2006-02-28 Государственный Университет Молд0 Composition for obtaining thin stannic oxide films
MD3662C2 (en) * 2005-09-02 2009-02-28 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Semiconductor thermoelectric alloy (variants)
MD20050258A (en) * 2005-09-08 2007-04-30 Технический университет Молдовы Process for electromagnetic field frequency selection for metal fusing in suspension state at the manufacture of insulation wire
MD20050257A (en) * 2005-09-08 2007-08-31 Технический университет Молдовы Process for insulated wire manufacturing
EP1928035A1 (en) * 2005-09-22 2008-06-04 Ube Industries, Ltd. Thermo-electric converting material and process for producing the same
MD20050370A (en) * 2005-12-12 2007-08-31 Технический университет Молдовы Plant for casting conducting threads from metals in liquid phase
MD3579B1 (en) * 2006-05-02 2008-04-30 Institutul De Inginerie Electronica Si Tehnologiiindustriale Al Academiei De Stiinte A Moldovei Process for obtaining bismuth semimetallic microwire in molybdenum glass insulation
EP1930960A1 (en) * 2006-12-04 2008-06-11 Aarhus Universitet Use of thermoelectric materials for low temperature thermoelectric purposes
MD3920C2 (en) * 2006-12-04 2009-12-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Process for increasing the efficiency of the thermoelectric cell
MD3688C2 (en) * 2007-03-14 2009-03-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Semiconductor strain-sensing resistor
MD3692F1 (en) * 2007-04-28 2008-08-31 Institutul De Inginerie Electronica Si Tehnologiiindustriale Al Academiei De Stiinte A Moldovei Thermoelectrode for thermoelectric converter
MD3693F1 (en) * 2007-04-28 2008-08-31 Institutul De Inginerie Electronica Si Tehnologiiindustriale Al Academiei De Stiinte A Moldovei Thermoelectrode for thermoelectric converter
MD3691C2 (en) * 2007-05-10 2009-03-31 Акционерное Общество Научно-Исследовательский Институт "Eliri" Process for manufacturing a filiform nanostructure
MD3580G2 (en) * 2007-07-25 2008-11-30 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Thermoelectrode for thermoelectric converter
MD4002C2 (en) * 2008-03-19 2010-07-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Apparatus for measuring the intensity of the magnetic field
RU2008129392A (en) * 2008-07-18 2010-01-27 Общество с ограниченной ответственностью Научно-производственное объединение "Кристалл" (RU) CRYSTAL PLATE, RECTANGULAR BAR, COMPONENT FOR THE PRODUCTION OF THERMOELECTRIC MODULES AND METHOD FOR PRODUCING CRYSTAL PLATE
MD174Z (en) * 2009-05-19 2010-10-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Semiconducting material
MD280Y (en) * 2009-12-22 2010-09-30 Institutul De Inginerie Electronica Si Tehnologii Industriale Al Academiei De Stiinte A Moldovei Process for manufacture of Te microwire in glass insulation

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Таиров Б.А., Ибрагимова О.И. Выращивание монокристаллов твердых растворов висмут-сурьма, легированных оловом и теллуром. Fizika, 2009 CILD XV № 2. p. 86-88 *
Таиров Б.А., Ибрагимова О.И. Выращивания монокристаллов твердых растворов висмут-сурьма, легированных оловом и теллуром. *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD542Z (en) * 2012-01-13 2013-03-31 ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ Thermoelectric anisotropic material on base of bismuth
MD575Z (en) * 2012-01-31 2013-07-31 ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ Method for recrystallization of bismuth filament in glass insulation

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