MD3662C2 - Semiconductor thermoelectric alloy (variants) - Google Patents
Semiconductor thermoelectric alloy (variants)Info
- Publication number
- MD3662C2 MD3662C2 MDA20050253A MD20050253A MD3662C2 MD 3662 C2 MD3662 C2 MD 3662C2 MD A20050253 A MDA20050253 A MD A20050253A MD 20050253 A MD20050253 A MD 20050253A MD 3662 C2 MD3662 C2 MD 3662C2
- Authority
- MD
- Moldova
- Prior art keywords
- alloy
- variants
- semiconductor thermoelectric
- thermoelectric alloy
- variant
- Prior art date
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to the semiconductor materials and may be used for obtaining semiconductor alloys.Summary of the invention, according to the first variant, consists in that the alloy is made on base of Bi dopped with Te and burnt up to recrystallization, the temperature gradient of which is oriented along the trigonal axis of the crystal lattice of the alloy, where Te is contained in the proportion of 1.35... 1.45 at.%, and according to the second variant, the alloy temperature gradient is oriented along the bisectrix of its crystal lattice, where Te is contained in the proportion of 1.05... 1.15 at. %.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20050253A MD3662C2 (en) | 2005-09-02 | 2005-09-02 | Semiconductor thermoelectric alloy (variants) |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20050253A MD3662C2 (en) | 2005-09-02 | 2005-09-02 | Semiconductor thermoelectric alloy (variants) |
Publications (3)
Publication Number | Publication Date |
---|---|
MD20050253A MD20050253A (en) | 2007-09-30 |
MD3662B2 MD3662B2 (en) | 2008-07-31 |
MD3662C2 true MD3662C2 (en) | 2009-02-28 |
Family
ID=38567117
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MDA20050253A MD3662C2 (en) | 2005-09-02 | 2005-09-02 | Semiconductor thermoelectric alloy (variants) |
Country Status (1)
Country | Link |
---|---|
MD (1) | MD3662C2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD4013G2 (en) * | 2007-10-31 | 2010-08-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Process for obtaining an alloy with increased magnetic resistance for the manufacture of microwires |
MD174Z (en) * | 2009-05-19 | 2010-10-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Semiconducting material |
MD323Z (en) * | 2009-12-29 | 2011-08-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Thermoelectric microwire in glass insulation |
MD402Z (en) * | 2010-09-17 | 2012-02-29 | ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ | Process for rapid growth of bismuth monocrystal |
MD542Z (en) * | 2012-01-13 | 2013-03-31 | ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ | Thermoelectric anisotropic material on base of bismuth |
MD575Z (en) * | 2012-01-31 | 2013-07-31 | ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ | Method for recrystallization of bismuth filament in glass insulation |
-
2005
- 2005-09-02 MD MDA20050253A patent/MD3662C2/en not_active IP Right Cessation
Non-Patent Citations (4)
Title |
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Блатт Ф. Дж., Шредер П. А., Фойлз К. Л., Грейг Д. Термоэлектродвижущая сила металлов. Москва, 1980 * |
В. Г., Трефилов А. В., Фомичев С. В. Об особенностях электросопротивления и термоэдс металлов при фазовых * |
Вакс В. Г., Трефилов А. В., Фомичев С. В. Об особенностях электросопротивления и термоэдс металлов при фазовых переходах 21/2 рода. ЖЭТФ, т.80, в.4, стр.1613-1621, 1981 * |
переходах 21/2 рода. ЖЭТФ, т.80, в.4, стр.1613-1621, 1981 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD4013G2 (en) * | 2007-10-31 | 2010-08-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Process for obtaining an alloy with increased magnetic resistance for the manufacture of microwires |
MD174Z (en) * | 2009-05-19 | 2010-10-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Semiconducting material |
MD323Z (en) * | 2009-12-29 | 2011-08-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Thermoelectric microwire in glass insulation |
MD402Z (en) * | 2010-09-17 | 2012-02-29 | ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ | Process for rapid growth of bismuth monocrystal |
MD542Z (en) * | 2012-01-13 | 2013-03-31 | ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ | Thermoelectric anisotropic material on base of bismuth |
MD575Z (en) * | 2012-01-31 | 2013-07-31 | ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ | Method for recrystallization of bismuth filament in glass insulation |
Also Published As
Publication number | Publication date |
---|---|
MD20050253A (en) | 2007-09-30 |
MD3662B2 (en) | 2008-07-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG4A | Patent for invention issued | ||
KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
MM4A | Patent for invention definitely lapsed due to non-payment of fees |