MD3662C2 - Semiconductor thermoelectric alloy (variants) - Google Patents

Semiconductor thermoelectric alloy (variants) Download PDF

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Publication number
MD3662C2
MD3662C2 MDA20050253A MD20050253A MD3662C2 MD 3662 C2 MD3662 C2 MD 3662C2 MD A20050253 A MDA20050253 A MD A20050253A MD 20050253 A MD20050253 A MD 20050253A MD 3662 C2 MD3662 C2 MD 3662C2
Authority
MD
Moldova
Prior art keywords
alloy
variants
semiconductor thermoelectric
thermoelectric alloy
variant
Prior art date
Application number
MDA20050253A
Other languages
Romanian (ro)
Russian (ru)
Other versions
MD20050253A (en
MD3662B2 (en
Inventor
Павел БОДЮЛ
Думитру ГИЦУ
Альбина НИКОЛАЕВА
Валериу ЧОРБЭ
Георге ПАРА
Анна ЦУРКАН
Original Assignee
Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы filed Critical Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы
Priority to MDA20050253A priority Critical patent/MD3662C2/en
Publication of MD20050253A publication Critical patent/MD20050253A/en
Publication of MD3662B2 publication Critical patent/MD3662B2/en
Publication of MD3662C2 publication Critical patent/MD3662C2/en

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Abstract

The invention relates to the semiconductor materials and may be used for obtaining semiconductor alloys.Summary of the invention, according to the first variant, consists in that the alloy is made on base of Bi dopped with Te and burnt up to recrystallization, the temperature gradient of which is oriented along the trigonal axis of the crystal lattice of the alloy, where Te is contained in the proportion of 1.35... 1.45 at.%, and according to the second variant, the alloy temperature gradient is oriented along the bisectrix of its crystal lattice, where Te is contained in the proportion of 1.05... 1.15 at. %.
MDA20050253A 2005-09-02 2005-09-02 Semiconductor thermoelectric alloy (variants) MD3662C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20050253A MD3662C2 (en) 2005-09-02 2005-09-02 Semiconductor thermoelectric alloy (variants)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20050253A MD3662C2 (en) 2005-09-02 2005-09-02 Semiconductor thermoelectric alloy (variants)

Publications (3)

Publication Number Publication Date
MD20050253A MD20050253A (en) 2007-09-30
MD3662B2 MD3662B2 (en) 2008-07-31
MD3662C2 true MD3662C2 (en) 2009-02-28

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ID=38567117

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20050253A MD3662C2 (en) 2005-09-02 2005-09-02 Semiconductor thermoelectric alloy (variants)

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MD (1) MD3662C2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4013G2 (en) * 2007-10-31 2010-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Process for obtaining an alloy with increased magnetic resistance for the manufacture of microwires
MD174Z (en) * 2009-05-19 2010-10-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Semiconducting material
MD323Z (en) * 2009-12-29 2011-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Thermoelectric microwire in glass insulation
MD402Z (en) * 2010-09-17 2012-02-29 ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ Process for rapid growth of bismuth monocrystal
MD542Z (en) * 2012-01-13 2013-03-31 ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ Thermoelectric anisotropic material on base of bismuth
MD575Z (en) * 2012-01-31 2013-07-31 ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ Method for recrystallization of bismuth filament in glass insulation

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Блатт Ф. Дж., Шредер П. А., Фойлз К. Л., Грейг Д. Термоэлектродвижущая сила металлов. Москва, 1980 *
В. Г., Трефилов А. В., Фомичев С. В. Об особенностях электросопротивления и термоэдс металлов при фазовых *
Вакс В. Г., Трефилов А. В., Фомичев С. В. Об особенностях электросопротивления и термоэдс металлов при фазовых переходах 21/2 рода. ЖЭТФ, т.80, в.4, стр.1613-1621, 1981 *
переходах 21/2 рода. ЖЭТФ, т.80, в.4, стр.1613-1621, 1981 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4013G2 (en) * 2007-10-31 2010-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Process for obtaining an alloy with increased magnetic resistance for the manufacture of microwires
MD174Z (en) * 2009-05-19 2010-10-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Semiconducting material
MD323Z (en) * 2009-12-29 2011-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Thermoelectric microwire in glass insulation
MD402Z (en) * 2010-09-17 2012-02-29 ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ Process for rapid growth of bismuth monocrystal
MD542Z (en) * 2012-01-13 2013-03-31 ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ Thermoelectric anisotropic material on base of bismuth
MD575Z (en) * 2012-01-31 2013-07-31 ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ Method for recrystallization of bismuth filament in glass insulation

Also Published As

Publication number Publication date
MD20050253A (en) 2007-09-30
MD3662B2 (en) 2008-07-31

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