MD20050253A - Semiconductor alloy - Google Patents

Semiconductor alloy

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Publication number
MD20050253A
MD20050253A MDA20050253A MD20050253A MD20050253A MD 20050253 A MD20050253 A MD 20050253A MD A20050253 A MDA20050253 A MD A20050253A MD 20050253 A MD20050253 A MD 20050253A MD 20050253 A MD20050253 A MD 20050253A
Authority
MD
Moldova
Prior art keywords
semiconductor alloy
temperature gradient
along
oriented
axis
Prior art date
Application number
MDA20050253A
Other languages
Romanian (ro)
Other versions
MD3662B2 (en
MD3662C2 (en
Inventor
Pavel Bodiul
Dumitru Ghitu
Albina Nicolaeva
Valeriu CIORBA
Gheorghe Para
Ana TURCAN
Original Assignee
Institutul De Inginerie Electronica Si Tehnologiiindustriale Al Academiei De Stiinte A Moldovei
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institutul De Inginerie Electronica Si Tehnologiiindustriale Al Academiei De Stiinte A Moldovei filed Critical Institutul De Inginerie Electronica Si Tehnologiiindustriale Al Academiei De Stiinte A Moldovei
Priority to MDA20050253A priority Critical patent/MD3662C2/en
Publication of MD20050253A publication Critical patent/MD20050253A/en
Publication of MD3662B2 publication Critical patent/MD3662B2/en
Publication of MD3662C2 publication Critical patent/MD3662C2/en

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Inventia se refera la materialele semiconductoaresi poate fi utilizata pentru obtinerea acestor aliaje. Esenta inventiei consta in aceea ca aliajul de Bi-Te, gradientul de temperatura al caruia esteorientat de-a lungul axei trigonale, are compozitia Bi1-x-Tex , unde x=0,0135…0,0145, iar pentru gradientul de temperatura orientat de-a lungul axei bisectoare x=0,0105…0,0115.The invention relates to semiconductor materials that can be used to obtain these alloys. The essence of the invention is that the Bi-Te alloy, whose temperature gradient is oriented along the trigonal axis, has the composition Bi1-x-Tex, where x = 0.0135 ... 0.0145, and for the temperature gradient oriented. along the bisector axis x = 0.0105 ... 0.0115.

MDA20050253A 2005-09-02 2005-09-02 Semiconductor thermoelectric alloy (variants) MD3662C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20050253A MD3662C2 (en) 2005-09-02 2005-09-02 Semiconductor thermoelectric alloy (variants)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20050253A MD3662C2 (en) 2005-09-02 2005-09-02 Semiconductor thermoelectric alloy (variants)

Publications (3)

Publication Number Publication Date
MD20050253A true MD20050253A (en) 2007-09-30
MD3662B2 MD3662B2 (en) 2008-07-31
MD3662C2 MD3662C2 (en) 2009-02-28

Family

ID=38567117

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20050253A MD3662C2 (en) 2005-09-02 2005-09-02 Semiconductor thermoelectric alloy (variants)

Country Status (1)

Country Link
MD (1) MD3662C2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4013G2 (en) * 2007-10-31 2010-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Process for obtaining an alloy with increased magnetic resistance for the manufacture of microwires
MD174Z (en) * 2009-05-19 2010-10-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Semiconducting material
MD323Z (en) * 2009-12-29 2011-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Thermoelectric microwire in glass insulation
MD402Z (en) * 2010-09-17 2012-02-29 ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ Process for rapid growth of bismuth monocrystal
MD542Z (en) * 2012-01-13 2013-03-31 ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ Thermoelectric anisotropic material on base of bismuth
MD575Z (en) * 2012-01-31 2013-07-31 ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ Method for recrystallization of bismuth filament in glass insulation

Also Published As

Publication number Publication date
MD3662B2 (en) 2008-07-31
MD3662C2 (en) 2009-02-28

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Legal Events

Date Code Title Description
FG4A Patent for invention issued
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees