MD3662C2 - Aliaj semiconductor termoelectric (variante) - Google Patents

Aliaj semiconductor termoelectric (variante) Download PDF

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Publication number
MD3662C2
MD3662C2 MDA20050253A MD20050253A MD3662C2 MD 3662 C2 MD3662 C2 MD 3662C2 MD A20050253 A MDA20050253 A MD A20050253A MD 20050253 A MD20050253 A MD 20050253A MD 3662 C2 MD3662 C2 MD 3662C2
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MD
Moldova
Prior art keywords
alloy
variants
semiconductor thermoelectric
thermoelectric alloy
variant
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Application number
MDA20050253A
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English (en)
Russian (ru)
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MD20050253A (ro
MD3662B2 (ro
Inventor
Павел БОДЮЛ
Думитру ГИЦУ
Альбина НИКОЛАЕВА
Валериу ЧОРБЭ
Георге ПАРА
Анна ЦУРКАН
Original Assignee
Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы
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Application filed by Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы filed Critical Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы
Priority to MDA20050253A priority Critical patent/MD3662C2/ro
Publication of MD20050253A publication Critical patent/MD20050253A/ro
Publication of MD3662B2 publication Critical patent/MD3662B2/ro
Publication of MD3662C2 publication Critical patent/MD3662C2/ro

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Abstract

Invenţia se referă la materialele semiconductoare şi poate fi utilizată pentru obţinerea aliajelor semiconductoare.Esenţa invenţiei, conform primei variante, constă în aceea că aliajul este executat în bază de Bi dopat cu Te şi tratat termic până la recristalizare, gradientul de temperatură al căruia este orientat de-a lungul axei trigonale a reţelei cristaline a aliajului, unde Te se conţine în proporţie de 1,35…1,45% at. Iar conform variantei a doua, gradientul de temperatură al aliajului este orientat de-a lungul axei bisectoare a reţelei sale cristaline, unde Te se conţine în proporţie de 1,05…1,15% at.    
MDA20050253A 2005-09-02 2005-09-02 Aliaj semiconductor termoelectric (variante) MD3662C2 (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20050253A MD3662C2 (ro) 2005-09-02 2005-09-02 Aliaj semiconductor termoelectric (variante)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20050253A MD3662C2 (ro) 2005-09-02 2005-09-02 Aliaj semiconductor termoelectric (variante)

Publications (3)

Publication Number Publication Date
MD20050253A MD20050253A (ro) 2007-09-30
MD3662B2 MD3662B2 (ro) 2008-07-31
MD3662C2 true MD3662C2 (ro) 2009-02-28

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MDA20050253A MD3662C2 (ro) 2005-09-02 2005-09-02 Aliaj semiconductor termoelectric (variante)

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MD (1) MD3662C2 (ro)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4013G2 (ro) * 2007-10-31 2010-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Procedeu de obţinere a aliajului cu magnetorezistenţă mărită pentru confecţionarea microfirelor
MD174Z (ro) * 2009-05-19 2010-10-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Material semiconductor
MD323Z (ro) * 2009-12-29 2011-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Microfir termoelectric în izolaţie de sticlă
MD402Z (ro) * 2010-09-17 2012-02-29 ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ Procedeu de creştere rapidă a monocristalului de bismut
MD542Z (ro) * 2012-01-13 2013-03-31 ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ Material termoelectric anizotropic pe bază de bismut
MD575Z (ro) * 2012-01-31 2013-07-31 ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ Procedeu de recristalizare a firului de bismut în izolaţie de sticlă

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Блатт Ф. Дж., Шредер П. А., Фойлз К. Л., Грейг Д. Термоэлектродвижущая сила металлов. Москва, 1980 *
В. Г., Трефилов А. В., Фомичев С. В. Об особенностях электросопротивления и термоэдс металлов при фазовых *
Вакс В. Г., Трефилов А. В., Фомичев С. В. Об особенностях электросопротивления и термоэдс металлов при фазовых переходах 21/2 рода. ЖЭТФ, т.80, в.4, стр.1613-1621, 1981 *
переходах 21/2 рода. ЖЭТФ, т.80, в.4, стр.1613-1621, 1981 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4013G2 (ro) * 2007-10-31 2010-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Procedeu de obţinere a aliajului cu magnetorezistenţă mărită pentru confecţionarea microfirelor
MD174Z (ro) * 2009-05-19 2010-10-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Material semiconductor
MD323Z (ro) * 2009-12-29 2011-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Microfir termoelectric în izolaţie de sticlă
MD402Z (ro) * 2010-09-17 2012-02-29 ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ Procedeu de creştere rapidă a monocristalului de bismut
MD542Z (ro) * 2012-01-13 2013-03-31 ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ Material termoelectric anizotropic pe bază de bismut
MD575Z (ro) * 2012-01-31 2013-07-31 ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu" АНМ Procedeu de recristalizare a firului de bismut în izolaţie de sticlă

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Publication number Publication date
MD20050253A (ro) 2007-09-30
MD3662B2 (ro) 2008-07-31

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