MD174Z - Material semiconductor - Google Patents

Material semiconductor Download PDF

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Publication number
MD174Z
MD174Z MDS20090092A MDS20090092A MD174Z MD 174 Z MD174 Z MD 174Z MD S20090092 A MDS20090092 A MD S20090092A MD S20090092 A MDS20090092 A MD S20090092A MD 174 Z MD174 Z MD 174Z
Authority
MD
Moldova
Prior art keywords
semiconducting material
tin telluride
semiconducting
doped
tellurium
Prior art date
Application number
MDS20090092A
Other languages
English (en)
Russian (ru)
Inventor
Ефим ЗАСАВИЦКИЙ
Константин АНДРОНИК
Валериу КАНЦЕР
Анатолие СИДОРЕНКО
Original Assignee
Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы filed Critical Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы
Priority to MDS20090092A priority Critical patent/MD174Z/ro
Publication of MD174Y publication Critical patent/MD174Y/ro
Publication of MD174Z publication Critical patent/MD174Z/ro

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

Invenţia se referă la materiale semiconductoare, care posedă proprietăţi de supraconductori, în particular la un material semiconductor din telurură de staniu dopată.Materialul, conform invenţiei, este obţinut pe bază de telurură de staniu, telur şi este dopat suplimentar cu galiu, iar componentele sunt luate în următorul raport, % mas:
MDS20090092A 2009-05-19 2009-05-19 Material semiconductor MD174Z (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDS20090092A MD174Z (ro) 2009-05-19 2009-05-19 Material semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDS20090092A MD174Z (ro) 2009-05-19 2009-05-19 Material semiconductor

Publications (2)

Publication Number Publication Date
MD174Y MD174Y (ro) 2010-03-31
MD174Z true MD174Z (ro) 2010-10-31

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ID=43568946

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MDS20090092A MD174Z (ro) 2009-05-19 2009-05-19 Material semiconductor

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MD (1) MD174Z (ro)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD323Z (ro) * 2009-12-29 2011-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Microfir termoelectric în izolaţie de sticlă

Citations (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1360100A (en) * 1970-12-31 1974-07-17 Ibm Superconductive tunnelling device
JPS5349963A (en) * 1976-10-18 1978-05-06 Nippon Telegr & Teleph Corp <Ntt> Super-current tunneling element
JPS5390882A (en) * 1977-01-21 1978-08-10 Nippon Telegr & Teleph Corp <Ntt> Supercurrent tunneling element
JPS5613784A (en) * 1979-07-13 1981-02-10 Nippon Telegr & Teleph Corp <Ntt> Preparation of semiconductor barrier josephson junction element
JPS57104283A (en) * 1980-12-20 1982-06-29 Rikagaku Kenkyusho Josephson junction element and manufacture thereof
JPS57176780A (en) * 1981-04-22 1982-10-30 Toshiba Corp P-n junction superconductive element
SU961512A1 (ru) * 1980-12-26 1983-01-23 Ленинградский Ордена Ленина Политехнический Институт Им.М.И.Калинина Сверхпровод щий полупроводниковый материал
JPS58110084A (ja) * 1981-12-24 1983-06-30 Mitsubishi Electric Corp ジヨセフソン素子
JPS58125881A (ja) * 1982-01-22 1983-07-27 Hitachi Ltd 縦型抵抗回路の構成方法
JPS58191427A (ja) * 1982-04-30 1983-11-08 Sharp Corp 不純物添加方法
US4470190A (en) * 1982-11-29 1984-09-11 At&T Bell Laboratories Josephson device fabrication method
JPS6167282A (ja) * 1984-09-08 1986-04-07 Nippon Telegr & Teleph Corp <Ntt> 超伝導集積回路用抵抗素子及びその製法
JPS61181178A (ja) * 1985-02-06 1986-08-13 Rikagaku Kenkyusho ジヨセフソン接合素子とその製造方法
JPS6218776A (ja) * 1985-07-17 1987-01-27 Fujitsu Ltd 超伝導装置
JPS6298769A (ja) * 1985-10-25 1987-05-08 Nippon Telegr & Teleph Corp <Ntt> 半導体素子
JPS63160273A (ja) * 1986-12-23 1988-07-04 Fujitsu Ltd 高速半導体装置
JPS6430110A (en) * 1987-07-23 1989-02-01 Matsushita Electric Industrial Co Ltd Superconductor
JPS6452322A (en) * 1987-08-21 1989-02-28 Matsushita Electric Industrial Co Ltd Superconductor
JPS6452321A (en) * 1987-08-21 1989-02-28 Matsushita Electric Industrial Co Ltd Superconductor
JPS6452319A (en) * 1987-08-21 1989-02-28 Matsushita Electric Industrial Co Ltd Superconductor and integrated superconductive device
JPS6452325A (en) * 1987-08-21 1989-02-28 Matsushita Electric Industrial Co Ltd Superconductor
JPH0199269A (ja) * 1987-10-13 1989-04-18 Nippon Telegr & Teleph Corp <Ntt> 酸化物超伝導体トンネル接合およびその形成方法
JPH02277275A (ja) * 1989-04-19 1990-11-13 Hitachi Ltd 電子キヤリア無限層状構造酸化物超伝導体及びジョセフソン接合
BG48908A1 (en) * 1989-08-07 1991-06-14 Vissh Khim T I Superconducting ceramic material
JPH05121731A (ja) * 1991-10-26 1993-05-18 Rohm Co Ltd 強誘電体層を有する半導体素子
JPH07273379A (ja) * 1994-04-01 1995-10-20 Kokusai Chodendo Sangyo Gijutsu Kenkyu Center 酸化物超電導体接合素子の製造方法
JPH0918063A (ja) * 1995-06-28 1997-01-17 Matsushita Electric Ind Co Ltd 酸化物超電導体量子干渉素子
RU2111579C1 (ru) * 1996-09-03 1998-05-20 Адиль Маликович Яфясов Способ получения квантового интерференционного элемента
US5877122A (en) * 1995-05-19 1999-03-02 Fujitsu Ltd. Josephson element having a NdBa2 Cu3 O7-y superconductor thin-film wiring pattern
MD2436G2 (ro) * 2003-03-18 2004-10-31 Государственный Университет Молд0 Compozitie pentru obtinerea peliculelor subtiri de dioxid de staniu cu sensibilitate inalta la oxid de carbon
MD2805G2 (ro) * 2004-03-26 2006-02-28 Государственный Университет Молд0 Compoziţie pentru obţinerea peliculelor subţiri de dioxid de staniu
MD3662C2 (ro) * 2005-09-02 2009-02-28 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Aliaj semiconductor termoelectric (variante)
MD3688C2 (ro) * 2007-03-14 2009-03-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Rezistor semiconductor tensosensibil
  • 2009

Patent Citations (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1360100A (en) * 1970-12-31 1974-07-17 Ibm Superconductive tunnelling device
JPS5349963A (en) * 1976-10-18 1978-05-06 Nippon Telegr & Teleph Corp <Ntt> Super-current tunneling element
JPS5390882A (en) * 1977-01-21 1978-08-10 Nippon Telegr & Teleph Corp <Ntt> Supercurrent tunneling element
JPS5613784A (en) * 1979-07-13 1981-02-10 Nippon Telegr & Teleph Corp <Ntt> Preparation of semiconductor barrier josephson junction element
JPS57104283A (en) * 1980-12-20 1982-06-29 Rikagaku Kenkyusho Josephson junction element and manufacture thereof
SU961512A1 (ru) * 1980-12-26 1983-01-23 Ленинградский Ордена Ленина Политехнический Институт Им.М.И.Калинина Сверхпровод щий полупроводниковый материал
JPS57176780A (en) * 1981-04-22 1982-10-30 Toshiba Corp P-n junction superconductive element
JPS58110084A (ja) * 1981-12-24 1983-06-30 Mitsubishi Electric Corp ジヨセフソン素子
JPS58125881A (ja) * 1982-01-22 1983-07-27 Hitachi Ltd 縦型抵抗回路の構成方法
JPS58191427A (ja) * 1982-04-30 1983-11-08 Sharp Corp 不純物添加方法
US4470190A (en) * 1982-11-29 1984-09-11 At&T Bell Laboratories Josephson device fabrication method
JPS6167282A (ja) * 1984-09-08 1986-04-07 Nippon Telegr & Teleph Corp <Ntt> 超伝導集積回路用抵抗素子及びその製法
JPS61181178A (ja) * 1985-02-06 1986-08-13 Rikagaku Kenkyusho ジヨセフソン接合素子とその製造方法
JPS6218776A (ja) * 1985-07-17 1987-01-27 Fujitsu Ltd 超伝導装置
JPS6298769A (ja) * 1985-10-25 1987-05-08 Nippon Telegr & Teleph Corp <Ntt> 半導体素子
JPS63160273A (ja) * 1986-12-23 1988-07-04 Fujitsu Ltd 高速半導体装置
JPS6430110A (en) * 1987-07-23 1989-02-01 Matsushita Electric Industrial Co Ltd Superconductor
JPS6452322A (en) * 1987-08-21 1989-02-28 Matsushita Electric Industrial Co Ltd Superconductor
JPS6452321A (en) * 1987-08-21 1989-02-28 Matsushita Electric Industrial Co Ltd Superconductor
JPS6452319A (en) * 1987-08-21 1989-02-28 Matsushita Electric Industrial Co Ltd Superconductor and integrated superconductive device
JPS6452325A (en) * 1987-08-21 1989-02-28 Matsushita Electric Industrial Co Ltd Superconductor
JPH0199269A (ja) * 1987-10-13 1989-04-18 Nippon Telegr & Teleph Corp <Ntt> 酸化物超伝導体トンネル接合およびその形成方法
JPH02277275A (ja) * 1989-04-19 1990-11-13 Hitachi Ltd 電子キヤリア無限層状構造酸化物超伝導体及びジョセフソン接合
BG48908A1 (en) * 1989-08-07 1991-06-14 Vissh Khim T I Superconducting ceramic material
JPH05121731A (ja) * 1991-10-26 1993-05-18 Rohm Co Ltd 強誘電体層を有する半導体素子
JPH07273379A (ja) * 1994-04-01 1995-10-20 Kokusai Chodendo Sangyo Gijutsu Kenkyu Center 酸化物超電導体接合素子の製造方法
US5877122A (en) * 1995-05-19 1999-03-02 Fujitsu Ltd. Josephson element having a NdBa2 Cu3 O7-y superconductor thin-film wiring pattern
JPH0918063A (ja) * 1995-06-28 1997-01-17 Matsushita Electric Ind Co Ltd 酸化物超電導体量子干渉素子
RU2111579C1 (ru) * 1996-09-03 1998-05-20 Адиль Маликович Яфясов Способ получения квантового интерференционного элемента
MD2436G2 (ro) * 2003-03-18 2004-10-31 Государственный Университет Молд0 Compozitie pentru obtinerea peliculelor subtiri de dioxid de staniu cu sensibilitate inalta la oxid de carbon
MD2805G2 (ro) * 2004-03-26 2006-02-28 Государственный Университет Молд0 Compoziţie pentru obţinerea peliculelor subţiri de dioxid de staniu
MD3662C2 (ro) * 2005-09-02 2009-02-28 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Aliaj semiconductor termoelectric (variante)
MD3688C2 (ro) * 2007-03-14 2009-03-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Rezistor semiconductor tensosensibil

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Коэн М., Глэдстоун Г., Йенсен М., Шриффер Дж. Сверхпроводимость полупроводников и переходных металлов. гл. 3, Москва, Мир, 1972. *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD323Z (ro) * 2009-12-29 2011-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Microfir termoelectric în izolaţie de sticlă

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Publication number Publication date
MD174Y (ro) 2010-03-31

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KA4Y Short-term patent lapsed due to non-payment of fees (with right of restoration)