MD3579B1 - Process for obtaining bismuth semimetallic microwire in molybdenum glass insulation - Google Patents

Process for obtaining bismuth semimetallic microwire in molybdenum glass insulation Download PDF

Info

Publication number
MD3579B1
MD3579B1 MDA20060132A MD20060132A MD3579B1 MD 3579 B1 MD3579 B1 MD 3579B1 MD A20060132 A MDA20060132 A MD A20060132A MD 20060132 A MD20060132 A MD 20060132A MD 3579 B1 MD3579 B1 MD 3579B1
Authority
MD
Moldova
Prior art keywords
semimetallic
glass insulation
microwire
bismuth
molybdenum glass
Prior art date
Application number
MDA20060132A
Other languages
Romanian (ro)
Other versions
MD3579C2 (en
Inventor
Pavel Bodiul
Dumitru Ghitu
Albina Nicolaeva
Ana TURCAN
Ion Popov
Original Assignee
Institutul De Inginerie Electronica Si Tehnologiiindustriale Al Academiei De Stiinte A Moldovei
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institutul De Inginerie Electronica Si Tehnologiiindustriale Al Academiei De Stiinte A Moldovei filed Critical Institutul De Inginerie Electronica Si Tehnologiiindustriale Al Academiei De Stiinte A Moldovei
Priority to MDA20060132A priority Critical patent/MD3579C2/en
Publication of MD3579B1 publication Critical patent/MD3579B1/en
Publication of MD3579C2 publication Critical patent/MD3579C2/en

Links

Landscapes

  • Glass Compositions (AREA)

Abstract

Inventia se refera la tehnologiile de producere amicrofirului fin si extrafin in izolatie de sticla. Procedeul de obtinere a microfirelor semimetalice de bismut in izolatie de sticla de molibden consta in intinderea microfirului confectionat incalzit pana la temperatura la care raportul coeficientilor de viscozitate a microfirului de bismut si a sticlei de molibden hm/hs atinge valoarea de 0,2.The invention relates to the technologies for the production of fine and extrafine amicrofir in glass insulation. The process of obtaining semimetallic bismuth microfires in molybdenum glass insulation consists in the extent of the microfire made heated to the temperature at which the ratio of the viscosity coefficients of the bismuth microfire and of the molybdenum glass hm / hs reaches the value of 0,2.

MDA20060132A 2006-05-02 2006-05-02 Process for obtaining bismuth semimetallic microwire in molybdenum glass insulation MD3579C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20060132A MD3579C2 (en) 2006-05-02 2006-05-02 Process for obtaining bismuth semimetallic microwire in molybdenum glass insulation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20060132A MD3579C2 (en) 2006-05-02 2006-05-02 Process for obtaining bismuth semimetallic microwire in molybdenum glass insulation

Publications (2)

Publication Number Publication Date
MD3579B1 true MD3579B1 (en) 2008-04-30
MD3579C2 MD3579C2 (en) 2008-11-30

Family

ID=39365447

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20060132A MD3579C2 (en) 2006-05-02 2006-05-02 Process for obtaining bismuth semimetallic microwire in molybdenum glass insulation

Country Status (1)

Country Link
MD (1) MD3579C2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD3920C2 (en) * 2006-12-04 2009-12-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Process for increasing the efficiency of the thermoelectric cell
MD4013G2 (en) * 2007-10-31 2010-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Process for obtaining an alloy with increased magnetic resistance for the manufacture of microwires
MD4052C1 (en) * 2008-10-16 2011-01-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Device for measuring the electrical conduction and thermoelectromotive force of semiconductor materials in the temperature range 300…1200K
MD323Z (en) * 2009-12-29 2011-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Thermoelectric microwire in glass insulation

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD280Z (en) * 2009-12-22 2011-04-30 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Process for manufacture of Te microwire in glass insulation
MD4046C2 (en) * 2009-12-23 2010-12-31 Акционерное Общество Научно-Исследовательский Институт "Eliri" Method of manufacturing the filamentary nanostructure
MD261Z (en) * 2010-01-19 2011-03-31 Институт Прикладной Физики Академии Наук Молдовы Process for the obtaining of nanowires

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD1546G2 (en) * 1997-05-12 2001-06-30 Лабораторул Интернационал Де Супракондуктибилитате Ши Електроника Корпулуй Солид Process for obtaining a metallic microwire into the glass insulation

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD3920C2 (en) * 2006-12-04 2009-12-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Process for increasing the efficiency of the thermoelectric cell
MD4013G2 (en) * 2007-10-31 2010-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Process for obtaining an alloy with increased magnetic resistance for the manufacture of microwires
MD4052C1 (en) * 2008-10-16 2011-01-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Device for measuring the electrical conduction and thermoelectromotive force of semiconductor materials in the temperature range 300…1200K
MD323Z (en) * 2009-12-29 2011-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Thermoelectric microwire in glass insulation

Also Published As

Publication number Publication date
MD3579C2 (en) 2008-11-30

Similar Documents

Publication Publication Date Title
FR2952008B1 (en) METHOD FOR MANUFACTURING WIPER ARM AND WIPER ARM PRODUCED THEREBY
EP2832887A4 (en) PERSONALIZED DRAWING FOR HOT STAMPING, HOT STAMPING ELEMENT AND METHODS OF PRODUCING THE SAME
FR2937055B1 (en) PROCESS FOR THE LOW-TEMPERATURE MANUFACTURE OF LATERAL-GROWING SEMICONDUCTOR NANOWIRES AND NANOWAR-BASED TRANSISTORS OBTAINED THEREBY
EP1942150A4 (en) SILOXANE RESIN COMPOSITION AND METHOD FOR PRODUCING SAME
EP2138992A4 (en) METHOD FOR MANUFACTURING DISPLAY ELEMENT, APPARATUS FOR MANUFACTURING DISPLAY ELEMENT, AND DISPLAY ELEMENT THUS OBTAINED
EP2508635A4 (en) COPPER ALLOY SHEET AND PROCESS FOR PRODUCING THE SAME
EP3438300A4 (en) CU-NI-SI COPPER ALLOY SHEET AND METHOD FOR MANUFACTURING THE SAME
BRPI0911236A2 (en) device for producing molten glass and method of producing molten glass employing the device
EP2079546A4 (en) SILICEOUS COMPOSITIONS RICH IN METAL, AND METHODS OF PRODUCING THE SAME
EP2259295A4 (en) EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMENT, AND PROCESS FOR PRODUCING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT
DE602006002039D1 (en) Pre-scoop blade with curved lamellar profile and manufacturing process for the doctor blade
EP2196980A4 (en) DISPLAY ELEMENT MANUFACTURING METHOD, DISPLAY ELEMENT PRODUCTION DEVICE AND DISPLAY DEVICE
EP2006732A4 (en) PHOTOREGULATION ELEMENT AND METHOD FOR MANUFACTURING THE SAME
EP3425006A4 (en) COMPOSITION FOR HEAT DISSIPATING ELEMENT, HEAT DISSIPATING ELEMENT, ELECTRONIC INSTRUMENT AND METHOD FOR MANUFACTURING HEAT DISSIPATING ELEMENT
EP4053190A4 (en) ORGANOPOLYSILOXANE AND ASSOCIATED PRODUCTION METHOD, AND THERMALLY CONDUCTIVE SILICONE COMPOSITION
EP2477236A4 (en) NITRIDE SEMICONDUCTOR MULTILAYER STRUCTURE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR LUMINESCENT ELEMENT
MD3579B1 (en) Process for obtaining bismuth semimetallic microwire in molybdenum glass insulation
EP2259287A4 (en) EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMENT, AND PROCESS FOR PRODUCING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT
EP2975151A4 (en) FERRITIC STAINLESS STEEL SHEET SHOWING SMALL INCREASE IN RESISTANCE AFTER THERMAL AGING TREATMENT AND PROCESS FOR PRODUCING THE SAME
FR2997557B1 (en) NANOFIL ELECTRONIC DEVICE WITH TRANSITION METAL BUFFER LAYER, METHOD OF GROWING AT LEAST ONE NANOWIL, AND DEVICE MANUFACTURING METHOD
BRPI0819744A2 (en) SWEET POTATO FLAKE PROCESS
EP1914799A4 (en) PROCESS FOR PRODUCING SILICON ON INSULATION
EP2495217A4 (en) THERMAL RADIATION SCREEN COMPOSITION AND METHOD FOR PRODUCING THE SAME
EP2891819A4 (en) PROCESS FOR MANUFACTURING AN ENDLESS METAL BELT, ENDLESS METAL BELT, AND CONTINUOUS VARIATION TYPE BELT TRANSMISSION
EP1898455A4 (en) INTERCOULE INSULATING FILM AND CIRCUIT STRUCTURE, AND METHOD FOR PRODUCING THE SAME

Legal Events

Date Code Title Description
FG4A Patent for invention issued
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees