IN2012DN05898A - - Google Patents

Info

Publication number
IN2012DN05898A
IN2012DN05898A IN5898DEN2012A IN2012DN05898A IN 2012DN05898 A IN2012DN05898 A IN 2012DN05898A IN 5898DEN2012 A IN5898DEN2012 A IN 5898DEN2012A IN 2012DN05898 A IN2012DN05898 A IN 2012DN05898A
Authority
IN
India
Prior art keywords
absorber layer
molybdenum
semiconductor absorber
molybdenum nitride
depositing
Prior art date
Application number
Inventor
Pratima V Addepalli
Oleh P Karpenko
Thomas W Shields
Original Assignee
First Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by First Solar Inc filed Critical First Solar Inc
Publication of IN2012DN05898A publication Critical patent/IN2012DN05898A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A method for manufacturing a photovoltaic device may include depositing a semiconductor absorber layer on a substrate depositing a molybdenum in the presence of a nitrogen to form a molybdenum nitride in contact with the semiconductor absorber layer and doping the molybdenum nitride with a copper dopant.
IN5898DEN2012 2009-12-18 2010-12-14 IN2012DN05898A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28806509P 2009-12-18 2009-12-18
PCT/US2010/060201 WO2011075461A1 (en) 2009-12-18 2010-12-14 Photovoltaic device back contact

Publications (1)

Publication Number Publication Date
IN2012DN05898A true IN2012DN05898A (en) 2015-09-18

Family

ID=44149398

Family Applications (1)

Application Number Title Priority Date Filing Date
IN5898DEN2012 IN2012DN05898A (en) 2009-12-18 2010-12-14

Country Status (3)

Country Link
US (1) US20110146784A1 (en)
IN (1) IN2012DN05898A (en)
WO (1) WO2011075461A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101790792A (en) 2007-11-02 2010-07-28 第一太阳能有限公司 photovoltaic devices including doped semiconductor films
US8759669B2 (en) * 2011-01-14 2014-06-24 Hanergy Hi-Tech Power (Hk) Limited Barrier and planarization layer for thin-film photovoltaic cell
WO2012177804A2 (en) 2011-06-20 2012-12-27 Alliance For Sustainable Energy, Llc IMPROVED CdTe DEVICES AND METHOD OF MANUFACTURING SAME
US9780242B2 (en) 2011-08-10 2017-10-03 Ascent Solar Technologies, Inc. Multilayer thin-film back contact system for flexible photovoltaic devices on polymer substrates
CN103187457A (en) * 2011-12-27 2013-07-03 无锡尚德太阳能电力有限公司 Cadmium telluride thin film solar cell, cell pack and fabrication method of thin film solar cell
US20140261667A1 (en) * 2013-03-15 2014-09-18 First Solar, Inc. Photovoltaic device having improved back electrode and method of formation
WO2017079008A1 (en) * 2015-11-04 2017-05-11 Ascent Solar Technologies, Inc. Multilayer thin-film back contact system for flexible photovoltaic devices on polymer substrates

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58207348A (en) * 1982-05-28 1983-12-02 Tanaka Kikinzoku Kogyo Kk Electrical contact material for sealing
US4471004A (en) * 1983-04-28 1984-09-11 General Electric Company Method of forming refractory metal conductors of low resistivity
JPH01120818A (en) * 1987-09-23 1989-05-12 Siemens Ag Method of forming low transmission resistance ohmic contact
PL173917B1 (en) * 1993-08-10 1998-05-29 Ct Badan Wysokocisnieniowych P Method of obtaining a crystalline lamellar structure
GB9425334D0 (en) * 1994-12-15 1995-02-15 Philips Electronics Uk Ltd Liquid crystal display device and apparatus including such
WO1997021252A1 (en) * 1995-12-07 1997-06-12 Japan Energy Corporation Method of producing photoelectric conversion device
US6137048A (en) * 1996-11-07 2000-10-24 Midwest Research Institute Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby
JP2001147424A (en) * 1999-11-19 2001-05-29 Hitachi Ltd Insulating substrate for forming conductive thin film and liquid crystal display device using the same
US6548751B2 (en) * 2000-12-12 2003-04-15 Solarflex Technologies, Inc. Thin film flexible solar cell
US20020144725A1 (en) * 2001-04-10 2002-10-10 Motorola, Inc. Semiconductor structure suitable for forming a solar cell, device including the structure, and methods of forming the device and structure
KR100571819B1 (en) * 2003-10-16 2006-04-17 삼성전자주식회사 light emitting device and method of manufacturing the same using p-type conductive transparent oxide thin film electrode
US7935382B2 (en) * 2005-12-20 2011-05-03 Momentive Performance Materials, Inc. Method for making crystalline composition
US8154493B2 (en) * 2006-06-02 2012-04-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, driving method of the same, and electronic device using the same
US9147778B2 (en) * 2006-11-07 2015-09-29 First Solar, Inc. Photovoltaic devices including nitrogen-containing metal contact
US20090104733A1 (en) * 2007-10-22 2009-04-23 Yong Kee Chae Microcrystalline silicon deposition for thin film solar applications
WO2010141461A1 (en) * 2009-06-04 2010-12-09 First Solar, Inc. Doped metal contact
WO2010141463A1 (en) * 2009-06-04 2010-12-09 First Solar, Inc. Dopant-containing contact material
US20100307568A1 (en) * 2009-06-04 2010-12-09 First Solar, Inc. Metal barrier-doped metal contact layer

Also Published As

Publication number Publication date
WO2011075461A1 (en) 2011-06-23
US20110146784A1 (en) 2011-06-23

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