IN2013MU03516A - - Google Patents
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- Publication number
- IN2013MU03516A IN2013MU03516A IN3516MU2013A IN2013MU03516A IN 2013MU03516 A IN2013MU03516 A IN 2013MU03516A IN 3516MU2013 A IN3516MU2013 A IN 3516MU2013A IN 2013MU03516 A IN2013MU03516 A IN 2013MU03516A
- Authority
- IN
- India
- Prior art keywords
- monocrystalline silicon
- semiconductor substrate
- doping unit
- dopant doped
- layer including
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 abstract 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000002019 doping agent Substances 0.000 abstract 2
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the graded gap type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
A photoelectric device includes: a semiconductor substrate including monocrystalline silicon and has first and second surfaces that are opposite to each other; a doping unit formed on the first surface of the semiconductor substrate; and an insulating layer that is formed between the doping unit and the second surface of the semiconductor substrate, wherein the doping unit includes: a first semiconductor layer including a first dopant doped in the monocrystalline silicon; and a second semiconductor layer including a second dopant doped in the monocrystalline silicon
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261725437P | 2012-11-12 | 2012-11-12 | |
US13/949,147 US20140130854A1 (en) | 2012-11-12 | 2013-07-23 | Photoelectric device and the manufacturing method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2013MU03516A true IN2013MU03516A (en) | 2015-07-31 |
Family
ID=49123763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN3516MU2013 IN2013MU03516A (en) | 2012-11-12 | 2013-11-08 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20140130854A1 (en) |
EP (1) | EP2731146B1 (en) |
JP (1) | JP6363335B2 (en) |
KR (1) | KR102148427B1 (en) |
CN (1) | CN103811572B (en) |
IN (1) | IN2013MU03516A (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104009114B (en) * | 2013-05-22 | 2016-08-10 | 江苏爱多光伏科技有限公司 | The manufacture method of quasi-monocrystalline silicon solar battery sheet |
US9559236B2 (en) * | 2014-09-24 | 2017-01-31 | Sunpower Corporation | Solar cell fabricated by simplified deposition process |
CN106784069A (en) * | 2015-11-20 | 2017-05-31 | 上海神舟新能源发展有限公司 | Back surface tunnel oxidation is passivated interdigital formula back junction back contact battery production method |
CN105390555A (en) * | 2015-12-25 | 2016-03-09 | 常州天合光能有限公司 | Full-back-electrode solar cell structure and preparation method therefor |
US9871150B1 (en) * | 2016-07-01 | 2018-01-16 | Sunpower Corporation | Protective region for metallization of solar cells |
JP6246982B1 (en) * | 2016-10-25 | 2017-12-13 | 信越化学工業株式会社 | High photoelectric conversion efficiency solar cell and method for producing high photoelectric conversion efficiency solar cell |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3762144B2 (en) * | 1998-06-18 | 2006-04-05 | キヤノン株式会社 | Method for manufacturing SOI substrate |
DE10127217B4 (en) * | 2001-06-05 | 2005-09-15 | Infineon Technologies Ag | Process for the production of accurate large-area membrane masks |
US6998288B1 (en) * | 2003-10-03 | 2006-02-14 | Sunpower Corporation | Use of doped silicon dioxide in the fabrication of solar cells |
US7468485B1 (en) * | 2005-08-11 | 2008-12-23 | Sunpower Corporation | Back side contact solar cell with doped polysilicon regions |
US7737357B2 (en) * | 2006-05-04 | 2010-06-15 | Sunpower Corporation | Solar cell having doped semiconductor heterojunction contacts |
JP2009152222A (en) * | 2006-10-27 | 2009-07-09 | Kyocera Corp | Manufacturing method of solar cell element |
US20080173347A1 (en) * | 2007-01-23 | 2008-07-24 | General Electric Company | Method And Apparatus For A Semiconductor Structure |
JP5226255B2 (en) * | 2007-07-13 | 2013-07-03 | シャープ株式会社 | Manufacturing method of solar cell |
WO2009067483A1 (en) * | 2007-11-19 | 2009-05-28 | Applied Materials, Inc. | Solar cell contact formation process using a patterned etchant material |
JP2008085374A (en) * | 2007-12-19 | 2008-04-10 | Sanyo Electric Co Ltd | Photovoltaic element |
EP2239788A4 (en) * | 2008-01-30 | 2017-07-12 | Kyocera Corporation | Solar battery element and solar battery element manufacturing method |
US7851698B2 (en) * | 2008-06-12 | 2010-12-14 | Sunpower Corporation | Trench process and structure for backside contact solar cells with polysilicon doped regions |
US8207444B2 (en) * | 2008-07-01 | 2012-06-26 | Sunpower Corporation | Front contact solar cell with formed electrically conducting layers on the front side and backside |
US8790957B2 (en) * | 2010-03-04 | 2014-07-29 | Sunpower Corporation | Method of fabricating a back-contact solar cell and device thereof |
US8686283B2 (en) * | 2010-05-04 | 2014-04-01 | Silevo, Inc. | Solar cell with oxide tunneling junctions |
KR101702982B1 (en) * | 2010-07-19 | 2017-02-06 | 삼성에스디아이 주식회사 | Solar cell and method for manufacturing the same |
US20120060904A1 (en) * | 2010-09-13 | 2012-03-15 | Smith David D | Fabrication Of Solar Cells With Silicon Nano-Particles |
US20120073650A1 (en) * | 2010-09-24 | 2012-03-29 | David Smith | Method of fabricating an emitter region of a solar cell |
US8492253B2 (en) * | 2010-12-02 | 2013-07-23 | Sunpower Corporation | Method of forming contacts for a back-contact solar cell |
JP2012186229A (en) * | 2011-03-03 | 2012-09-27 | Univ Of Tokyo | Manufacturing method for single-crystal silicon thin film, manufacturing method for single-crystal silicon thin-film device, manufacturing method for solar cell device, single-crystal silicon thin film, and single-crystal silicon thin-film device and solar cell device including the single-crystal silicon thin film |
-
2013
- 2013-07-23 US US13/949,147 patent/US20140130854A1/en not_active Abandoned
- 2013-09-10 EP EP13183814.6A patent/EP2731146B1/en active Active
- 2013-09-13 KR KR1020130110611A patent/KR102148427B1/en active IP Right Grant
- 2013-09-25 JP JP2013197748A patent/JP6363335B2/en active Active
- 2013-11-08 IN IN3516MU2013 patent/IN2013MU03516A/en unknown
- 2013-11-12 CN CN201310560386.7A patent/CN103811572B/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN103811572A (en) | 2014-05-21 |
EP2731146A2 (en) | 2014-05-14 |
CN103811572B (en) | 2017-12-12 |
EP2731146B1 (en) | 2018-04-11 |
US20140130854A1 (en) | 2014-05-15 |
EP2731146A3 (en) | 2014-09-03 |
KR20140061953A (en) | 2014-05-22 |
JP6363335B2 (en) | 2018-07-25 |
KR102148427B1 (en) | 2020-08-26 |
JP2014096574A (en) | 2014-05-22 |
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